Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
PHEMT |
1 |
10 dBm |
65 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
12.5 dB |
-40 Cel |
MATTE TIN |
e3 |
1200 MHz |
2200 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
115 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
550 MHz |
1200 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
GAAS |
1 |
5 dBm |
35 mA |
COMPONENT |
3 |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
GOLD OVER NICKEL |
LOW NOISE |
e4 |
2100 MHz |
2900 MHz |
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|
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
1 |
10 |
COMPONENT |
3.5/5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
29 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
2500 MHz |
2700 MHz |
||||||||
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
70 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
MATTE TIN |
e3 |
50 MHz |
3000 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
95 mA |
COMPONENT |
3.5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
7500 MHz |
26500 MHz |
|||||||
|
Analog Devices |
NARROW BAND MEDIUM POWER |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
18.8 dB |
-40 Cel |
20 MHz |
500 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
30 dBm |
150 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
29 dB |
-40 Cel |
2700 MHz |
3800 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-55 Cel |
2000 MHz |
50000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 dBm |
260 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
18 dB |
-40 Cel |
700 MHz |
2200 MHz |
|||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.5 dB |
-40 Cel |
MATTE TIN |
e3 |
700 MHz |
1000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
11 dBm |
66 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.5 dB |
-55 Cel |
Gold (Au) |
LOW NOISE |
e4 |
3500 MHz |
7000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
Gold (Au) |
e4 |
|||||||||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
100 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
4800 MHz |
6000 MHz |
|||||
Analog Devices |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
74 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
1000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
82 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
20 dBm |
COMPONENT |
8 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.8 dB |
-55 Cel |
0 MHz |
15000 MHz |
||||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAN |
1 |
30 dBm |
150 mA |
COMPONENT |
28 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
29 dB |
-40 Cel |
2700 MHz |
3800 MHz |
|||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
70 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
14 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1000 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
16 dBm |
COMPONENT |
50 ohm |
85 Cel |
18.08 dB |
-40 Cel |
MATTE TIN |
e3 |
50 MHz |
4000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
||||||||||||||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
2 |
126 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
2250 MHz |
2500 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
GAAS |
1 |
18 dBm |
COMPONENT |
6 |
DIE OR CHIP |
50 ohm |
85 Cel |
21 dB |
-55 Cel |
Gold (Au) |
e4 |
33500 MHz |
46500 MHz |
|||||||||
Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
3900 MHz |
4450 MHz |
||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
38535V;38534K;883S |
50k Rad(Si |
1 |
39 mA |
COMPONENT |
3/5,2.4,2.8 |
200 ohm |
110 Cel |
-3.8 dB |
-55 Cel |
10 MHz |
500 MHz |
||||||||||||
Analog Devices |
NARROW BAND MEDIUM POWER |
26 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
SMA |
e0 |
1700 MHz |
2200 MHz |
||||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
90 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.5 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
2300 MHz |
2700 MHz |
|||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
30 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
30 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
GAAS |
600 mA |
14 |
DIE OR CHIP |
RF/Microwave Amplifiers |
|||||||||||||||||||||
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
105 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
38535V;38534K;883S |
100k Rad(Si |
1 |
39 mA |
COMPONENT |
3/5,2.4,2.8 |
200 ohm |
110 Cel |
-3.8 dB |
-55 Cel |
10 MHz |
500 MHz |
||||||||||||
Analog Devices |
WIDE BAND HIGH POWER |
36 dBm |
2 |
MODULE |
50 ohm |
60 Cel |
21 dB |
-30 Cel |
2000 MHz |
6000 MHz |
|||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-55 Cel |
2000 MHz |
30000 MHz |
|||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
42 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
7 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
|||||||||||||||
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-40 Cel |
TIN LEAD |
e0 |
6000 MHz |
9500 MHz |
||||||||
Analog Devices |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
325 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
50 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
12 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
22 dB |
-40 Cel |
GOLD NICKEL |
e4 |
24000 MHz |
35000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
SMA |
e3 |
700 MHz |
1000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.