Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
2600 MHz |
2800 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 dBm |
102 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
4000 MHz |
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Analog Devices |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
120 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
2 |
14 dBm |
COMPONENT |
8 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
5000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-55 Cel |
10 MHz |
10000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
44 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
80 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
COMPONENT |
3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
4900 MHz |
5900 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
14 dBm |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
5000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
31 dBm |
COMPONENT |
50 ohm |
85 Cel |
6.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
400 MHz |
2200 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
LOW NOISE |
2000 MHz |
4000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
12 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
NARROW BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
SMA |
e0 |
550 MHz |
1200 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
20 dBm |
115 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-55 Cel |
GOLD |
e4 |
6000 MHz |
18000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
7 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-55 Cel |
Gold (Au) |
LOW NOISE |
e4 |
20000 MHz |
32000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
55 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
MATTE TIN |
e3 |
4800 MHz |
6000 MHz |
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|
Analog Devices |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
5/7 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
e4 |
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Analog Devices |
WIDE BAND LOW POWER |
22 dBm |
COMPONENT |
50 ohm |
85 Cel |
11.5 dB |
-55 Cel |
0 MHz |
48000 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
2 |
-5 dBm |
281 mA |
COMPONENT |
3/5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
600 MHz |
1400 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
12 dBm |
60 mA |
COMPONENT |
5 |
LCC12,.12SQ,20 |
50 ohm |
85 Cel |
15 dB |
-40 Cel |
MATTE TIN |
e3 |
4000 MHz |
10000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
-5 dBm |
30 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
23 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1200 MHz |
3000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
COMPONENT |
1.8,3.3 |
SOLCC8,.08,20 |
100 ohm |
85 Cel |
24.1 dB |
-40 Cel |
10100 MHz |
11700 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
32 dBm |
COMPONENT |
5 |
SSOP16,.25 |
50 ohm |
85 Cel |
6 dB |
-40 Cel |
400 MHz |
2200 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
-5 dBm |
COMPONENT |
50 ohm |
85 Cel |
24 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
1300 MHz |
2900 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
COMPONENT |
12 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
0 MHz |
10000 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
GAN |
1 |
34 dBm |
COMPONENT |
3.2 |
FL10(UNSPEC) |
50 ohm |
85 Cel |
26 dB |
-40 Cel |
2700 MHz |
3200 MHz |
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Analog Devices |
NARROW BAND LOW POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
3300 MHz |
3800 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
34 mA |
COMPONENT |
3/5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17.3 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1 MHz |
2700 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
6100 MHz |
6720 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
e4 |
100 MHz |
20000 MHz |
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Analog Devices |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
50 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
21 dBm |
COMPONENT |
6 |
LCC16,.24SQ,40/32 |
50 ohm |
150 Cel |
24 dB |
-65 Cel |
37000 MHz |
40000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
2000 MHz |
30000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
95 mA |
3 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
WIDE BAND MEDIUM POWER |
23 dBm |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
SMA |
e0 |
700 MHz |
1000 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
2750 MHz |
3000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-55 Cel |
2000 MHz |
30000 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
3150 MHz |
3400 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
55 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
4800 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
16 dB |
-55 Cel |
10000 MHz |
13000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
37000 MHz |
40000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PHEMT |
1 |
25 dBm |
1.58 |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
400 MHz |
7500 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
3550 MHz |
3900 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
200 ohm |
85 Cel |
19 dB |
-40 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
1000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.