Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND MEDIUM POWER |
28 dBm |
COMPONENT |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
12000 MHz |
16000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
0 MHz |
8000 MHz |
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Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
17 dBm |
7 |
COMPONENT |
10 |
LCC16,.24SQ,40/32 |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
40000 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
7 |
LCC24,.2SQ,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3,5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
15.5 dB |
-40 Cel |
3100 MHz |
3900 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
COMPONENT |
7 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-55 Cel |
Matte Tin (Sn) - annealed |
e3 |
6000 MHz |
9500 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
17 dBm |
COMPONENT |
8 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8.5 dB |
-40 Cel |
MATTE TIN |
e3 |
0 MHz |
5000 MHz |
|||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
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|
Analog Devices |
WIDE BAND LOW POWER |
0 dBm |
COMPONENT |
50 ohm |
85 Cel |
6 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
5000 MHz |
6000 MHz |
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|
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
COMPONENT |
5 |
SOLCC8,.11,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18.3 dB |
-40 Cel |
Matte Tin (Sn) |
WAFFLE PACK |
e3 |
700 MHz |
1000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
-5 dBm |
58 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-55 Cel |
GOLD |
e4 |
24000 MHz |
36000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
3 dBm |
COMPONENT |
3/5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-55 Cel |
GOLD |
e4 |
24000 MHz |
30000 MHz |
||||||||||
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
5100 MHz |
5900 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
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|
Analog Devices |
NARROW BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
MATTE TIN |
e3 |
700 MHz |
1200 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
20 dBm |
COMPONENT |
3.5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-55 Cel |
GOLD |
e4 |
6000 MHz |
18000 MHz |
||||||||||
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
3100 MHz |
3900 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3,8 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
8 dB |
-40 Cel |
2000 MHz |
20000 MHz |
||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
2 |
124 mA |
3/5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
126 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
2100 MHz |
2900 MHz |
|||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
GAAS |
1 |
1.08 |
COMPONENT |
10 |
DIE OR CHIP |
50 ohm |
9.5 dB |
0 MHz |
48000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
8 dBm |
65 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-55 Cel |
GOLD |
LOW NOISE |
e4 |
18000 MHz |
32000 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
115 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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Analog Devices |
NARROW BAND LOW POWER |
10 dBm |
COMPONENT |
50 ohm |
85 Cel |
13 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1700 MHz |
2200 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
27 dBm |
COMPONENT |
50 ohm |
85 Cel |
8.5 dB |
-55 Cel |
0 MHz |
10000 MHz |
|||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
17 dBm |
COMPONENT |
50 ohm |
85 Cel |
7.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
4000 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
13 dBm |
1.67 |
COMPONENT |
3 |
LCC16,.12SQ,20 |
85 Cel |
16 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
4900 MHz |
5900 MHz |
||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
4 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
17 dBm |
7 |
COMPONENT |
10 |
LCC16,.24SQ,40/32 |
50 ohm |
85 Cel |
13.5 dB |
-40 Cel |
40000 MHz |
|||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
17 dBm |
100 mA |
COMPONENT |
8 |
SL,4GW-LD,.085CIR |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
5000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
9000 MHz |
12000 MHz |
|||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
115 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
0 dBm |
10 mA |
COMPONENT |
3 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
5000 MHz |
6000 MHz |
||||||||
Analog Devices |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
105 mA |
3/5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
||||||||||||||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
75 mA |
3/5 |
SOLCC6,.08,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
25 dBm |
175 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
MATTE TIN |
e3 |
400 MHz |
2500 MHz |
||||||
Analog Devices |
NARROW BAND LOW POWER |
3.5 dBm |
2 |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
2050 MHz |
2250 MHz |
|||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
5 dBm |
COMPONENT |
50 ohm |
85 Cel |
14 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
6000 MHz |
17000 MHz |
||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
8 dBm |
COMPONENT |
50 ohm |
85 Cel |
25.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
700 MHz |
2700 MHz |
|||||||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
31 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
7 dB |
-40 Cel |
TIN LEAD |
e0 |
400 MHz |
2200 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
85 mA |
8 |
SL,4GW-LD,.085CIR |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 |
TO-243 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
NARROW BAND MEDIUM POWER |
12 dBm |
COMPONENT |
50 ohm |
85 Cel |
19.7 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
20 MHz |
500 MHz |
|||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
20 dBm |
COMPONENT |
50 ohm |
85 Cel |
12 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
40 MHz |
1000 MHz |
||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
PHEMT |
1 |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
81000 MHz |
86000 MHz |
|||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.