Analog Devices RF & Microwave Amplifiers 1,237

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MAX2633EUT+T	Analog Devices	WIDE BAND LOW POWER						5 dBm	1.25		COMPONENT			50 ohm		85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	800 MHz	1000 MHz
MAX2233EEE+	Analog Devices	NARROW BAND MEDIUM POWER						10 dBm	1.5		COMPONENT			50 ohm		85 Cel	23.9 dB	-40 Cel	Matte Tin (Sn) - annealed	IT CAN ALSO OPERATE AT 800 TO 1000 MHZ	e3	800 MHz	1000 MHz
MAX2373ETC+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	850 MHz	940 MHz
MAX2615ETA/V+	Analog Devices	WIDE BAND LOW POWER																	Matte Tin (Sn) - annealed		e3
MAX2235EUP+	Analog Devices	WIDE BAND MEDIUM POWER						13 dBm	1.5		COMPONENT			50 ohm		85 Cel	24 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	800 MHz	1000 MHz
ADL8142-2C-CSL	Analog Devices	WIDE BAND LOW POWER
MAX2645EUB+	Analog Devices	NARROW BAND MEDIUM POWER						16 dBm			COMPONENT			50 ohm		85 Cel	12.9 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3400 MHz	3800 MHz
MAX2602	Analog Devices	WIDE BAND MEDIUM POWER						30 dBm											TIN LEAD		e0	0 MHz	1000 MHz
MAX2679BENS+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	16.5 dB	-40 Cel
MAX2640AUT+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			7.8 mA		3/5	TSOP6,.11,37		RF/Microwave Amplifiers	125 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3
MAX2373ETI	Analog Devices	NARROW BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	10.5 dB	-40 Cel				850 MHz	940 MHz
MAX2371ETC	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	TIN LEAD		e0	136 MHz	174 MHz
MAX2057ETX+T	Analog Devices	NARROW BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	13.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	2500 MHz
MAX2371ETI+	Analog Devices	NARROW BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	10.5 dB	-40 Cel				136 MHz	174 MHz
MAX2655EXT+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11.1 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	NICKEL GOLD PALLADIUM			1400 MHz	1700 MHz
MAX2614ETA+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8			1	20 dBm	1.67		COMPONENT	5		50 ohm		85 Cel	17.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	40 MHz	4000 MHz
MAX2601	Analog Devices	WIDE BAND MEDIUM POWER						30 dBm											TIN LEAD		e0	0 MHz	1000 MHz
MAX2616ETA+T	Analog Devices	WIDE BAND LOW POWER																	Matte Tin (Sn) - annealed		e3
MAX2634AXT+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1	5 dBm		6 mA	COMPONENT	2.5/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	125 Cel	10 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	315 MHz	433 MHz
MAX2679BENS+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	16.5 dB	-40 Cel
MAX2056ETX+TD	Analog Devices	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	15.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	800 MHz	1000 MHz
MAX2616ETA+	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	18 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	40 MHz	4000 MHz
MAX2679ENS+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	4			1	5 dBm	1.67		COMPONENT	1.8	BGA4,2X2,16	50 ohm		85 Cel	19 dB	-40 Cel
MAX2233	Analog Devices	WIDE BAND MEDIUM POWER						23.98 dBm											TIN LEAD		e0	800 MHz	1000 MHz
MAX2266EUE+	Analog Devices	NARROW BAND LOW POWER						13 dBm	2.5		COMPONENT			50 ohm		85 Cel	24.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	824 MHz	849 MHz
MAX2641EUT+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	125 Cel	12.4 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	1400 MHz	2500 MHz
MAX2644EXT+	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
ADL8142-2C-CSLZ	Analog Devices	WIDE BAND LOW POWER
MAX2611EUS+	Analog Devices	WIDE BAND LOW POWER						13 dBm	1.6		COMPONENT			50 ohm		85 Cel	17.3 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	0 MHz	1100 MHz
MAX2615ETA/V+T	Analog Devices	WIDE BAND LOW POWER																	Matte Tin (Sn) - annealed		e3
MAX2692EWS+	Analog Devices	WIDE BAND LOW POWER																	TIN SILVER COPPER NICKEL		e2
MAX2657EWT+T	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1	5 dBm			COMPONENT	1.8/3	BGA6,2X3,16	50 ohm	RF/Microwave Amplifiers	85 Cel	19.5 dB	-40 Cel	TIN SILVER COPPER NICKEL	CMOS COMPATIBLE	e2
MAX2373ETI+	Analog Devices	NARROW BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	10.5 dB	-40 Cel				850 MHz	940 MHz
MAX2692EWS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS	1	5 dBm			COMPONENT	1.8/3.3	BGA4,2X2,16	50 ohm	RF/Microwave Amplifiers	85 Cel	13.2 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
MAX2057ETX+TD	Analog Devices	NARROW BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	13.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	1700 MHz	2500 MHz
MAX2371ETC+	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	136 MHz	174 MHz
MAX2130EUA+T	Analog Devices	WIDE BAND MEDIUM POWER						15 dBm	2		COMPONENT			75 ohm		85 Cel	7.1 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	44 MHz	878 MHz
MAX2374EBT+T	Analog Devices	WIDE BAND LOW POWER						10 dBm	10		COMPONENT			50 ohm		85 Cel	12.5 dB	-40 Cel				750 MHz	1000 MHz
MAX2691EWS+	Analog Devices	WIDE BAND LOW POWER																	TIN SILVER COPPER NICKEL		e2
MAX2246EBL+	Analog Devices	WIDE BAND LOW POWER						10 dBm	6		COMPONENT			50 ohm		85 Cel		-40 Cel				2400 MHz	2500 MHz
MAX2613ETA+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8			1	20 dBm	1.43		COMPONENT	5		50 ohm		85 Cel	18.1 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	40 MHz	4000 MHz
MAX2641EUT+	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	1400 MHz	2500 MHz
MAX2645EUB+T	Analog Devices	NARROW BAND MEDIUM POWER						16 dBm			COMPONENT			50 ohm		85 Cel	12.9 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3400 MHz	3800 MHz
MAX2235	Analog Devices	WIDE BAND MEDIUM POWER						30 dBm											TIN LEAD		e0	800 MHz	1000 MHz
MAX2232	Analog Devices	WIDE BAND MEDIUM POWER						23.98 dBm											TIN LEAD		e0	800 MHz	1000 MHz
MAX2613ETA+T	Analog Devices	WIDE BAND LOW POWER																	Matte Tin (Sn) - annealed		e3
MAX2374EBT+	Analog Devices	WIDE BAND LOW POWER						10 dBm	10		COMPONENT			50 ohm		85 Cel	12.5 dB	-40 Cel				750 MHz	1000 MHz
MAX2615ETA+	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	18 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	40 MHz	4000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.