Analog Devices RF & Microwave Amplifiers 1,237

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC741ST89ERTR	Analog Devices		SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1					5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC772LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					4	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TUNGSTEN NICKEL GOLD
HMC906A	Analog Devices	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel	25 dB	-55 Cel				27300 MHz	33500 MHz
HMC788ACPSZ-EP-R7	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		105 Cel	9 dB	-55 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	10000 MHz
HMC561LP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm		85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	21000 MHz
ADL5530ACPZ-WP	Analog Devices	WIDE BAND MEDIUM POWER						10 dBm			COMPONENT			50 ohm		85 Cel	13 dB	-40 Cel	MATTE TIN	WAFFLE PACK	e3	0 MHz	1000 MHz
HMC734LP5E	Analog Devices	WIDE BAND LOW POWER							2		COMPONENT			50 ohm		85 Cel		-40 Cel	Matte Tin (Sn) - annealed		e3	8600 MHz	10200 MHz
HMC372LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	11.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	700 MHz	1000 MHz
HMC718LP4	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		2	-5 dBm		281 mA	COMPONENT	3/5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	600 MHz	1400 MHz
HMC8500LP5DE	Analog Devices	WIDE BAND HIGH POWER
HMC326MS8GRTR	Analog Devices		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1					5	TSSOP8,.19		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC517	Analog Devices	WIDE BAND LOW POWER						2 dBm			COMPONENT			50 ohm		85 Cel	15 dB	-55 Cel	GOLD		e4	17000 MHz	26000 MHz
HMC462LP5TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1			84 mA		5	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN LEAD		e0
HMC480ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1					8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC1049SCPZ-EP-R7	Analog Devices	WIDE BAND LOW POWER						18 dBm			COMPONENT			50 ohm		105 Cel	10 dB	-55 Cel				300 MHz	20000 MHz
HMC734LP5ETR	Analog Devices	WIDE BAND LOW POWER																	Matte Tin (Sn) - annealed		e3
HMC453ST89	Analog Devices	WIDE BAND MEDIUM POWER						32 dBm			COMPONENT			50 ohm		85 Cel	6 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	400 MHz	2200 MHz
HMC8113	Analog Devices	WIDE BAND HIGH POWER						5 dBm	2		MODULE			50 ohm		50 Cel	85 dB	10 Cel		TTL COMPATIBLE		2000 MHz	6000 MHz
HMC308ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel				800 MHz	3800 MHz
HMC685LP4ETR	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BICMOS				140 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel		-40 Cel	MATTE TIN		e3	1700 MHz	2200 MHz
HMC633LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	5 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	GOLD OVER NICKEL		e4	5500 MHz	17000 MHz
HMC413QS16G	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	3.6/5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	1600 MHz	2200 MHz
HMC684LP4ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BICMOS				100 mA		5	LCC24,.16SQ,20		RF/Microwave Mixers	85 Cel		-40 Cel	MATTE TIN		e3
HMC619LP5	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	27 dBm			COMPONENT	12	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	150 Cel	9.5 dB	-55 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	10000 MHz
HMC613LC4BTR	Analog Devices	WIDE BAND LOW POWER																	GOLD OVER NICKEL		e4
HMC593LP3E	Analog Devices	NARROW BAND LOW POWER						15 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel	MATTE TIN		e3	3300 MHz	3800 MHz
HMC910LC4BTR	Analog Devices	WIDE BAND LOW POWER																	GOLD OVER NICKEL		e4
HMC441LP3ERTR	Analog Devices		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			115 mA		5	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC591LP5TR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1					7	LCC32,.2SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC441LM1RTR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	15 dBm		115 mA	COMPONENT	5	LCC8,.2SQ,40	50 ohm		85 Cel	11 dB	-40 Cel				7000 MHz	15500 MHz
ADL5570ACPZ-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1		10		COMPONENT	3.5	LCC16,.16SQ,25	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-40 Cel	Matte Tin (Sn)		e3	2300 MHz	2400 MHz
HMC311SC70	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		74 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	0 MHz	8000 MHz
HMC388LP4	Analog Devices	NARROW BAND LOW POWER							2		COMPONENT			50 ohm		85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	3150 MHz	3400 MHz
HMC8401-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm		60 mA	COMPONENT	7.5	DIE OR CHIP	50 ohm		85 Cel	12.5 dB	-55 Cel				10 MHz	28000 MHz
HMC591LP5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	7	LCC32,.2SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	6000 MHz	9500 MHz
HMC356LP3	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	15 dBm			COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	350 MHz	550 MHz
ADL5533ACPZ-WP	Analog Devices	WIDE BAND LOW POWER						12 dBm			COMPONENT			75 ohm		85 Cel	16.8 dB	-40 Cel	Matte Tin (Sn)		e3	30 MHz	1000 MHz
ADL8106CHIPS-SX	Analog Devices	WIDE BAND LOW POWER
ADL8106CHIPS	Analog Devices	WIDE BAND LOW POWER
ADL8142-2CHIP	Analog Devices	WIDE BAND LOW POWER
ADL8142-2C-SX	Analog Devices	WIDE BAND LOW POWER
ADL8105ACPZN	Analog Devices	WIDE BAND LOW POWER
MAX2657EWT+	Analog Devices	NARROW BAND LOW POWER						5 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-40 Cel	TIN SILVER COPPER NICKEL		e2
MAX2615ETA+T	Analog Devices	WIDE BAND LOW POWER																	Matte Tin (Sn) - annealed		e3
MAX2472EUT+	Analog Devices	WIDE BAND LOW POWER																	Matte Tin (Sn) - annealed		e3
MAX2644EXT+T	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
MAX2232EEE+T	Analog Devices	NARROW BAND MEDIUM POWER						10 dBm	1.5		COMPONENT			50 ohm		85 Cel	23.9 dB	-40 Cel	Matte Tin (Sn) - annealed	IT CAN ALSO OPERATE AT 800 TO 1000 MHZ	e3	800 MHz	1000 MHz
MAX2650EUS+T	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR		13 dBm	1.3	24 mA	COMPONENT	5	TO-253	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	Matte Tin (Sn) - annealed	LOW NOISE	e3	800 MHz	1000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.