NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGU7005,115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	0 dBm			COMPONENT	1.8	SOLCC6,.04,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
BGU8009,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1					1.8/2.85	SOLCC6,.04,16		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGU7007,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			15.9 mA		1.8	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
A2I09VD015NR1	NXP Semiconductors	WIDE BAND LOW POWER																		TIN		e3
BGU8052X	NXP Semiconductors	WIDE BAND LOW POWER
BGU8007,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			14.7 mA		1.8	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin (Sn)		e3
MD7IC2012GNR1,528	NXP Semiconductors	NARROW BAND HIGH POWER
MW7IC2220NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
935363184528	NXP Semiconductors	WIDE BAND LOW POWER																		Tin (Sn)		e3
935373852528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel	Tin (Sn)		e3	3200 MHz	4000 MHz
MMG20241HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS		1	23 dBm		104 mA	COMPONENT	5	TO-243	50 ohm			18.4 dB		MATTE TIN		e3	450 MHz	3800 MHz
MMG15241HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	23 dBm		105 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14 dB		MATTE TIN	LOW NOISE	e3	500 MHz	2800 MHz
MW7IC008NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS		2	38 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		21.5 dB		MATTE TIN		e3	100 MHz	1000 MHz
BGA3018,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			135 mA		8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
MMG3002NT1	NXP Semiconductors	WIDE BAND LOW POWER							12 dBm			COMPONENT			50 ohm			19.3 dB		MATTE TIN		e3	40 MHz	3600 MHz
MHT2012NT1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY			1	20 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm		150 Cel	29.7 dB	-40 Cel	TIN		e3	2400 MHz	2500 MHz
BGA6130,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY			1			250 mA		3.6	SOLCC8,.12,20		RF/Microwave Amplifiers				NICKEL PALLADIUM GOLD		e4
BGU8019X	NXP Semiconductors	NARROW BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel		IEC-60134		1559 MHz	1610 MHz
MMG3014NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		160 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		18.5 dB		MATTE TIN		e3	40 MHz	4000 MHz
BGA2870,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			18.5 mA		2.5	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
AFIC901NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY			1		25		COMPONENT	7.5	LCC24,.16SQ,20	50 ohm		150 Cel	31.2 dB	-40 Cel	TIN		e3	1.8 MHz	1000 MHz
BGM1013,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
MBC13916NT1	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	BICMOS		1	10 dBm		5.6 mA	COMPONENT	2.7	SOT-343R	50 ohm	RF/Microwave Amplifiers	85 Cel	9.5 dB	-40 Cel	MATTE TIN		e3	100 MHz	2500 MHz
BGU7004,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		AEC-Q100	1			14.4 mA		1.8	SOLCC6,.04,20		RF/Microwave Amplifiers	125 Cel		-40 Cel	TIN		e3
MW7IC930NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		33 dB		TIN	IT CAN ALSO OPERATE AT 728 TO 768 MHZ	e3	920 MHz	960 MHz
BGM1013	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		33 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
MW7IC2750NBR1	NXP Semiconductors	NARROW BAND HIGH POWER							30 dBm	10		COMPONENT			50 ohm			24 dB		Matte Tin (Sn)		e3	2500 MHz	2700 MHz
MMG3H21NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	12 dBm		110 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		18.3 dB		MATTE TIN		e3	0 MHz	6000 MHz
BGU8103X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	1.6 mA	COMPONENT	0.8,1.8/2.85	SOLCC6,.03,16	50 ohm		85 Cel	14.5 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
MMG3012NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		82 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		17.5 dB		Matte Tin (Sn)		e3	0 MHz	6000 MHz
MMZ09312BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1	14 dBm		83 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		29 dB		MATTE TIN		e3	400 MHz	1000 MHz
MMRF2007NR1	NXP Semiconductors	WIDE BAND HIGH POWER
MMA25312BT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			138 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				MATTE TIN		e3
MMZ09332BT1	NXP Semiconductors	NARROW BAND MEDIUM POWER							29 dBm			COMPONENT			50 ohm			28.7 dB					130 MHz	1000 MHz
BGA2869,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			26 mA		5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGA2818,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1			22.7 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGA2867,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			23.2 mA		5	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGU6005/N2X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.43		COMPONENT	1.8/2.85	SOLCC6,.04,20	50 ohm		150 Cel	17.5 dB					1559 MHz	1610 MHz
BGU8009	NXP Semiconductors	NARROW BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	17.6 dB	-40 Cel	Pure Tin (Sn)			1559 MHz	1610 MHz
BGU8103	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	1.6 mA	COMPONENT	0.8,1.8/2.85	SOLCC6,.03,16	50 ohm		85 Cel	14.5 dB	-40 Cel				1559 MHz	1610 MHz
BLM7G1822S-20PBGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
MD8IC925GNR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY			2					28	FLNG,.67"H.SPACE		RF/Microwave Amplifiers				TIN		e3
MW7IC2040NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	25 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		29.5 dB		TIN		e3	1805 MHz	1990 MHz
BGA2003,115	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1			15 mA	COMPONENT	2.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	1800 MHz
BGA2003T/R	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm			16 dB			LOW NOISE		900 MHz	1800 MHz
BGU6101,147	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1			10 mA	COMPONENT	3	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel	4 dB	-40 Cel	TIN		e3	40 MHz	4000 MHz
BGU6102,147	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1			21 mA		3	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGU7041,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1					3.3	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	Tin (Sn)		e3

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.