NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGU7044,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.67	38 mA	COMPONENT	3.3	TSSOP6,.08	75 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	TIN		e3	40 MHz	1000 MHz
MMRF2010GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS		1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
MMZ25332BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR		1			412 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				MATTE TIN		e3
MW7IC2725NBR1	NXP Semiconductors	NARROW BAND HIGH POWER							22 dBm	10		COMPONENT			50 ohm			25.5 dB		Matte Tin (Sn)		e3	2300 MHz	2700 MHz
A5M36TG140T2	NXP Semiconductors	NARROW BAND HIGH POWER
MD7IC2050NBR1	NXP Semiconductors	NARROW BAND HIGH POWER							28 dBm	5		MODULE			50 ohm			28.5 dB		Matte Tin (Sn)	USABLE AT 1750 TO 2050 MHZ	e3	1880 MHz	2100 MHz
MD7IC2755NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		2	30 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		23 dB		TIN		e3	2500 MHz	2700 MHz
MD8IC925NR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY			2					28	FLNG,.67"H.SPACE		RF/Microwave Amplifiers				TIN		e3
MMG3001NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm	1.17	300 mA	COMPONENT	5.6	TO-243	50 ohm			18 dB					40 MHz	3600 MHz
MW7IC2725GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	22 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		25.5 dB		TIN		e3	2300 MHz	2700 MHz
MW7IC2725NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	22 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		25.5 dB		TIN		e3	2300 MHz	2700 MHz
BGU7005	NXP Semiconductors	NARROW BAND LOW POWER										COMPONENT			50 ohm		85 Cel	14 dB	-40 Cel	TIN	LOW NOISE	e3	1713 MHz	1851 MHz
BGU7005/Z/N2115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	0 dBm	1.22	14.4 mA	COMPONENT	1.8	SOLCC6,.04,20	50 ohm		85 Cel	14 dB	-40 Cel				1559 MHz	1610 MHz
MMZ25333BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER																		TIN		e3
BGA2817,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			22.2 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGA2815,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			21.1 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
A2I20H080NR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
BGA2866,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			20.1 mA		5	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
MMG3006NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	28 dBm		960 mA	COMPONENT	5	LCC16,.16SQ,25	50 ohm	RF/Microwave Amplifiers		16.5 dB		MATTE TIN		e3	400 MHz	2400 MHz
BGU8011X	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1					1.8/2.85	SOLCC6,.04,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
MMZ25332B4T1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm		415 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			23.5 dB		TIN		e3	1500 MHz	2700 MHz
AFIC10275NR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
BGA2800	NXP Semiconductors	WIDE BAND LOW POWER							-16.5 dBm			COMPONENT			50 ohm		85 Cel	18.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGU8L1X	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	6.6 mA	COMPONENT	0.8/1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	12.5 dB	-40 Cel				728 MHz	960 MHz
CA2830C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	-20 Cel				5 MHz	200 MHz
MHL19926	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	17 dBm	1.5	1050 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	28.4 dB	-20 Cel				1930 MHz	1990 MHz
MHL21336	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	GAAS			5 dBm	1.5	525 mA	COMPONENT	26	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				2110 MHz	2170 MHz
MHL9128	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			20 dBm	1.5	440 mA	COMPONENT	28	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				800 MHz	960 MHz
MHL9838N	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID		1	6 dBm	1.5	800 mA	COMPONENT	28	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	29.5 dB	-20 Cel				800 MHz	925 MHz
MHW2821-2	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	3	500 mA	COMPONENT	12.5	MOT CASE 301AB-02	50 ohm	RF/Microwave Amplifiers	100 Cel	17.9 dB	-30 Cel				890 MHz	950 MHz
MHW6342TN	NXP Semiconductors	WIDE BAND HIGH POWER	PANEL MOUNT	7	PLASTIC/EPOXY	BIPOLAR		1	6.25 dBm		340 mA	MODULE	24		75 ohm		100 Cel	34.5 dB	-20 Cel				40 MHz	550 MHz
A2I09VD030NR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
BGY95A	NXP Semiconductors	NARROW BAND HIGH POWER							16 dBm	2		MODULE			50 ohm		90 Cel		-30 Cel				824 MHz	851 MHz
BGD902	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		435 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.2 dB	-20 Cel		LOW NOISE		40 MHz	900 MHz
BGY152B	NXP Semiconductors	NARROW BAND HIGH POWER							7 dBm	2		COMPONENT			50 ohm		100 Cel	38.5 dB	-30 Cel				450 MHz	512 MHz
934064659115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			75 ohm		70 Cel	10 dB	-10 Cel	TIN		e3	40 MHz	1000 MHz
SE5205FE	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		125 Cel	16.5 dB	-55 Cel				0 MHz	400 MHz
933793560112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	22 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGD704/07,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			435 mA		24	SOT-115J		RF/Microwave Amplifiers
934062616112	NXP Semiconductors	NARROW BAND HIGH POWER										MODULE			75 ohm		100 Cel	27 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1003 MHz
MW4IC001NR4	NXP Semiconductors	WIDE BAND MEDIUM POWER										COMPONENT			50 ohm			12 dB		Matte Tin (Sn)		e3	800 MHz	2170 MHz
BGY122B	NXP Semiconductors	NARROW BAND MEDIUM POWER							7 dBm	3		MODULE			50 ohm		100 Cel	27.8 dB	-30 Cel				872 MHz	905 MHz
BLM7G1822S-40PBGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			1					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
SA5219D,623	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
BGM1011,115	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm			28 dB		Tin (Sn)		e3
SE5205AN	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		125 Cel		-55 Cel				0 MHz	600 MHz
BGY883	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	15 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGA7130	NXP Semiconductors	WIDE BAND MEDIUM POWER

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.