NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

BGA2716T/R

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

21 mA

5

TSSOP6,.08

RF/Microwave Amplifiers

Tin (Sn)

e3

BGA2803

NXP Semiconductors

WIDE BAND LOW POWER

COMPONENT

50 ohm

85 Cel

21.6 dB

-45 Cel

Pure Tin (Sn)

LOW NOISE

0 MHz

2200 MHz

BGU7032

NXP Semiconductors

WIDE BAND LOW POWER

10 dBm

COMPONENT

75 ohm

70 Cel

10 dB

-10 Cel

Tin (Sn)

e3

40 MHz

1000 MHz

MW7IC3825GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

45 dBm

10

COMPONENT

28

FLNG,.67"H.SPACE

50 ohm

RF/Microwave Amplifiers

21 dB

Matte Tin (Sn)

e3

3400 MHz

3600 MHz

935312376528

NXP Semiconductors

WIDE BAND HIGH POWER

Tin (Sn)

e3

BGU8051,118

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

20 dBm

1.07

60 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

85 Cel

17 dB

-40 Cel

300 MHz

1500 MHz

BGA2712,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

15 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

16 dB

Tin (Sn)

e3

100 MHz

3000 MHz

BGU8053X

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

IEC-60134

1

20 dBm

1.08

85 mA

COMPONENT

5

SOLCC8,.08SQ,20

50 ohm

85 Cel

-40 Cel

2000 MHz

6000 MHz

BGA2012T/R

NXP Semiconductors

NARROW BAND LOW POWER

COMPONENT

50 ohm

14 dB

Tin (Sn)

e3

BGU8011X,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

BICMOS

1

1.8/2.85

SOLCC6,.04,16

RF/Microwave Amplifiers

85 Cel

-40 Cel

MW7IC2220NBR1,528

NXP Semiconductors

NARROW BAND HIGH POWER

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.