NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
935289297135	NXP Semiconductors	WIDE BAND MEDIUM POWER							25 dBm			COMPONENT			50 ohm		85 Cel	13.5 dB	-40 Cel	TIN		e3	400 MHz	2700 MHz
935298609115	NXP Semiconductors	WIDE BAND LOW POWER
MHW7222BN	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	22.2 dB	-20 Cel				40 MHz	750 MHz
CGD987HCI,112	NXP Semiconductors				PLASTIC/EPOXY	GAAS		1			460 mA		24	SOT-115J		RF/Microwave Amplifiers
MHW9188	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				40 MHz	870 MHz
MHL19936	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	16 dBm	1.5	1450 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	28 dB	-20 Cel				1900 MHz	2000 MHz
MHW7185CLN	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	18.7 dB	-20 Cel				40 MHz	750 MHz
MHW7222A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			21.25 dBm		240 mA	MODULE	28	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				40 MHz	750 MHz
935296064115	NXP Semiconductors	WIDE BAND LOW POWER
BGA2815	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	23.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGU8M1UK	NXP Semiconductors	NARROW BAND LOW POWER
BGA2717,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	-10 dBm		10 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2802	NXP Semiconductors	WIDE BAND LOW POWER							-16.5 dBm			COMPONENT			50 ohm		85 Cel	29.6 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	0 MHz	2200 MHz
BGA2001	NXP Semiconductors	NARROW BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR						COMPONENT	2.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		19.5 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	1800 MHz
MW7IC2240N	NXP Semiconductors	NARROW BAND HIGH POWER								5		COMPONENT			50 ohm			15 dB					2110 MHz	2170 MHz
BGA2031/1T/R	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm	1.4		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB					800 MHz	2500 MHz
MMG3004NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		275 mA	COMPONENT	5	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers		15 dB					400 MHz	2200 MHz
BGA2012	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			10 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB		Tin (Sn)		e3
BGA2714,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.7 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	0 MHz	2700 MHz
935313345528	NXP Semiconductors	NARROW BAND HIGH POWER																		Tin (Sn)		e3
BGA2748,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	10 dBm		8 mA	COMPONENT	3	TSOP6,.08	50 ohm	RF/Microwave Amplifiers		18.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	2000 MHz
BGU7032,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1				COMPONENT	5	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	TIN		e3		1000 MHz
BGA2851	NXP Semiconductors	WIDE BAND LOW POWER							-26 dBm			COMPONENT			50 ohm		85 Cel	23.7 dB	-40 Cel	Pure Tin (Sn)	LOW NOISE		0 MHz	2200 MHz
BGU7003,132	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			15 mA		2.5	SOLCC6,.04,14		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin (Sn)		e3
935316155528	NXP Semiconductors	NARROW BAND HIGH POWER																		Tin (Sn)		e3
935323765528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS		1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	Tin (Sn)		e3	1030 MHz	1090 MHz
BGU8H1X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	7 mA	COMPONENT	0.8/1.8		50 ohm		85 Cel	10.5 dB	-40 Cel				2300 MHz	2690 MHz
BGA2870	NXP Semiconductors	WIDE BAND LOW POWER							-16.5 dBm			COMPONENT			50 ohm		85 Cel	29.6 dB	-40 Cel	PURE TIN	LOW NOISE		0 MHz	2200 MHz
BGA2011T/R	NXP Semiconductors	NARROW BAND LOW POWER										COMPONENT			50 ohm			15 dB		Tin (Sn)		e3
BGU7045	NXP Semiconductors	WIDE BAND LOW POWER							20 dBm			COMPONENT			75 ohm		85 Cel	14 dB	-40 Cel	PURE TIN			40 MHz	1000 MHz
935313109528	NXP Semiconductors	NARROW BAND HIGH POWER																		Tin (Sn)		e3
BGA2874,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			19 mA		2.5	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
BGA2709	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
935320823528	NXP Semiconductors	NARROW BAND HIGH POWER																		Tin (Sn)		e3
BGA2850,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			10.8 mA		5	TSSOP6,.08		RF/Microwave Amplifiers
BGU7008	NXP Semiconductors	NARROW BAND LOW POWER							0 dBm			COMPONENT			50 ohm		125 Cel	16 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
MMG38151BT1	NXP Semiconductors	WIDE BAND LOW POWER																		MATTE TIN		e3
MMG3003NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		205 mA	COMPONENT	6.2	TO-243	50 ohm	RF/Microwave Amplifiers		19.3 dB		Matte Tin (Sn)		e3	40 MHz	3600 MHz
BGU8062	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm								1500 MHz	2700 MHz
BGA2716,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		21 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)		e3	100 MHz	3000 MHz
MW7IC3825NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	45 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		21 dB		Matte Tin (Sn)		e3	3400 MHz	3600 MHz
MW7IC18100NBR1	NXP Semiconductors	NARROW BAND HIGH POWER								5		COMPONENT			50 ohm			27 dB		Matte Tin (Sn)		e3	1805 MHz	2050 MHz
BGA2711	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		16 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		13.9 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGA2851,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1			7.8 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	23.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MW7IC930NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20 dBm	10		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		33 dB		TIN	IT CAN ALSO OPERATE AT 728 TO 768 MHZ	e3	920 MHz	960 MHz
BGA2803,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1			6.6 mA	COMPONENT	3.3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		21.2 dB		TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGU7003W	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	PURE TIN			40 MHz	6000 MHz
BGA2800,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			12.1 mA		3.3	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.