NXP Semiconductors RF & Microwave Amplifiers 1,307

Reset All

Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
CGD923	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			490 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19.5 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
935294013115	NXP Semiconductors	WIDE BAND LOW POWER						-16.5 dBm			COMPONENT			50 ohm		85 Cel	29.6 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
CGD1042HI,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID	1			460 mA		24	SOT-115J		RF/Microwave Amplifiers
MHL9236NN	NXP Semiconductors	WIDE BAND HIGH POWER						10 dBm	1.5		COMPONENT					100 Cel	29 dB	-20 Cel				800 MHz	960 MHz
CGY1032,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID	1			280 mA		24	SOT-115J		RF/Microwave Amplifiers
MHL19338NN	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	10 dBm	1.5	525 mA	COMPONENT	28	MOT CASE 301AP-02		RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				1900 MHz	2000 MHz
MHW9146N	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	13.8 dB	-20 Cel				40 MHz	870 MHz
MHW8202B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			240 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	20.3 dB	-20 Cel				40 MHz	870 MHz
MHW8227A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS				440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
MML09212HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1			178 mA		5	SOLCC12,.12,20		RF/Microwave Amplifiers				MATTE TIN		e3
MMRF2005NR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
935298611115	NXP Semiconductors	WIDE BAND LOW POWER
MHW9267AN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
MHW9189	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				40 MHz	870 MHz
MHW8188AN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19.7 dB	-20 Cel				47 MHz	870 MHz
935290052115	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	23.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
935223940518	NXP Semiconductors	NARROW BAND HIGH POWER						2 dBm						50 ohm		85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
MHW1244	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24 dB	-20 Cel				5 MHz	200 MHz
MHW1254LN	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	24.3 dB	-20 Cel				5 MHz	50 MHz
MHW9187N	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19.4 dB	-20 Cel				40 MHz	870 MHz
CGD1046HI	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	26.5 dB	-20 Cel	GOLD	LOW NOISE	e4	40 MHz	1003 MHz
MHL9236N	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY		1	10 dBm	1.5	620 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				800 MHz	960 MHz
MMG2001T1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			440 mA	COMPONENT	24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	21 dB	-20 Cel				40 MHz	870 MHz
MBC13917EPR2	NXP Semiconductors	WIDE BAND LOW POWER
MHW9207A	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1			440 mA	COMPONENT	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	20.6 dB	-20 Cel				47 MHz	870 MHz
MHW1303LAN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	30 dB	-20 Cel				5 MHz	200 MHz
935295453115	NXP Semiconductors	WIDE BAND MEDIUM POWER
MHW8205	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel				40 MHz	860 MHz
MHL19936N	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	18 dBm	1.5	1450 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	27.5 dB	-20 Cel				1900 MHz	2000 MHz
MML20211HT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	22 dBm		60 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers		15 dB		TIN		e3	1400 MHz	2800 MHz
CGD1044HI,112	NXP Semiconductors				PLASTIC/EPOXY		1			460 mA		24	SOT-115J		RF/Microwave Amplifiers
935294012115	NXP Semiconductors	WIDE BAND LOW POWER
935294007115	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	21.6 dB	-45 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MHW8267A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			460 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
MHW9227A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	COMPONENT	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
CGY888C,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID	1			300 mA		24	SOT-115J		RF/Microwave Amplifiers
MHW7205CR	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			435 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel				40 MHz	750 MHz
MHW8247A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			460 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	24.4 dB	-20 Cel				47 MHz	870 MHz
CGD982HC	NXP Semiconductors	NARROW BAND HIGH POWER
MHW6342T	NXP Semiconductors	WIDE BAND HIGH POWER	PANEL MOUNT	7	PLASTIC/EPOXY	BIPOLAR	1	6.25 dBm		340 mA	MODULE	24		75 ohm		100 Cel	34.5 dB	-20 Cel				40 MHz	550 MHz
MHPA21010	NXP Semiconductors	NARROW BAND HIGH POWER			METAL		1	20 dBm	2		COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	23.7 dB	-20 Cel				2110 MHz	2170 MHz
935294006115	NXP Semiconductors	WIDE BAND LOW POWER						-16.5 dBm			COMPONENT			50 ohm		85 Cel	29.6 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MMRF2005GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
CGY1047,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID	1			270 mA		24	SOT-115J		RF/Microwave Amplifiers
MHW10247AN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	24.8 dB	-20 Cel				40 MHz	1000 MHz
935290053115	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	24.8 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MBC13720NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1	10 dBm			COMPONENT	2.7	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel	12 dB	-30 Cel	TIN		e3	400 MHz	2400 MHz
MHW1304LAN	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	30 dB	-20 Cel				5 MHz	65 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.