Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
TIN |
e3 |
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NXP Semiconductors |
WIDE BAND LOW POWER |
70 Cel |
0 Cel |
LOW NOISE |
180 MHz |
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NXP Semiconductors |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
16 dB |
TIN |
e3 |
0 MHz |
2700 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
34 dB |
-20 Cel |
LOW NOISE |
40 MHz |
860 MHz |
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NXP Semiconductors |
NARROW BAND MEDIUM POWER |
7 dBm |
3 |
MODULE |
50 ohm |
100 Cel |
27.8 dB |
-30 Cel |
824 MHz |
849 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
GAAS |
1 |
11 dBm |
10 |
COMPONENT |
1.8,32.8,3.5 |
DIE OR CHIP |
50 ohm |
100 Cel |
-35 Cel |
880 MHz |
915 MHz |
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NXP Semiconductors |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
HYBRID |
16.25 dBm |
200 mA |
MODULE |
24 |
SOT-115C |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
16.5 dB |
-20 Cel |
LOW NOISE |
40 MHz |
450 MHz |
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NXP Semiconductors |
WIDE BAND LOW POWER |
MODULE |
75 ohm |
90 Cel |
18 dB |
-20 Cel |
LOW NOISE |
5 MHz |
200 MHz |
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|
NXP Semiconductors |
WIDE BAND LOW POWER |
COMPONENT |
50 ohm |
85 Cel |
5.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
40 MHz |
4000 MHz |
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|
NXP Semiconductors |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
1 |
85 mA |
5 |
TO-243 |
RF/Microwave Amplifiers |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
19.03 dBm |
2 |
MODULE |
50 ohm |
90 Cel |
28 dB |
-10 Cel |
920 MHz |
960 MHz |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
6.25 dBm |
340 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
27.5 dB |
-20 Cel |
LOW NOISE |
40 MHz |
550 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
TIN |
e3 |
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|
NXP Semiconductors |
NARROW BAND LOW POWER |
COMPONENT |
50 ohm |
11.6 dB |
Tin (Sn) |
e3 |
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NXP Semiconductors |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
2 |
10 dBm |
3 |
COMPONENT |
3.6 |
LCC16(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
33.5 dB |
-30 Cel |
IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ |
880 MHz |
915 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
2 dBm |
COMPONENT |
85 Cel |
33 dB |
-20 Cel |
1710 MHz |
1785 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
435 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
18.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
750 MHz |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
MODULE |
75 ohm |
100 Cel |
35 dB |
-20 Cel |
LOW NOISE |
40 MHz |
450 MHz |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
15 dBm |
COMPONENT |
50 ohm |
85 Cel |
11 dB |
-40 Cel |
400 MHz |
2700 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
5 |
COMPONENT |
50 ohm |
85 Cel |
29 dB |
-10 Cel |
Matte Tin (Sn) |
IT CAN ALSO OPERATE AT 921 TO 960 MHZ |
e3 |
860 MHz |
960 MHz |
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NXP Semiconductors |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
HYBRID |
14 dBm |
2.6 |
400 mA |
MODULE |
15 |
MOT CASE 714T-01 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
-20 Cel |
10 MHz |
1000 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
410 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
COMPONENT |
50 ohm |
10 dB |
2900 MHz |
3300 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
26 dBm |
1.67 |
7.8 mA |
COMPONENT |
1.8,2.8 |
SOLCC6,.03,16 |
50 ohm |
85 Cel |
9.2 dB |
-40 Cel |
2300 MHz |
2690 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
COMPONENT |
3.3/5 |
QFP32,.35SQ,32 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
29 dB |
-40 Cel |
2400 MHz |
2500 MHz |
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NXP Semiconductors |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
6.25 dBm |
340 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
26.2 dB |
-20 Cel |
LOW NOISE |
40 MHz |
450 MHz |
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NXP Semiconductors |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
16.25 dBm |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
14.5 dB |
-20 Cel |
LOWNOISE |
40 MHz |
550 MHz |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
16.25 dBm |
435 mA |
COMPONENT |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
18.2 dB |
-20 Cel |
LOW NOISE |
40 MHz |
900 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
6.25 dBm |
340 mA |
MODULE |
24 |
SOT-115C |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
37 dB |
-20 Cel |
LOWNOISE |
40 MHz |
450 MHz |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
HYBRID |
450 mA |
MODULE |
24 |
SOT-115D |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
16.5 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
860 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
340 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
29 dB |
-20 Cel |
LOW NOISE |
40 MHz |
860 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
NARROW BAND MEDIUM POWER |
COMPONENT |
75 ohm |
100 Cel |
25 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
5 MHz |
65 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
22 dB |
-20 Cel |
LOW NOISE, HIGH RELIABILITY |
40 MHz |
600 MHz |
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NXP Semiconductors |
WIDE BAND HIGH POWER |
1.35 |
MODULE |
75 ohm |
40 MHz |
600 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
7 |
PLASTIC/EPOXY |
LDMOS |
1 |
20 dBm |
COMPONENT |
2.15/28 |
50 ohm |
150 Cel |
28 dB |
-40 Cel |
TIN |
e3 |
1800 MHz |
2200 MHz |
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|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
10 dBm |
1.67 |
120 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
115 Cel |
33.8 dB |
-40 Cel |
2300 MHz |
5000 MHz |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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NXP Semiconductors |
NARROW BAND LOW POWER |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
WIDE BAND MEDIUM POWER |
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NXP Semiconductors |
WIDE BAND MEDIUM POWER |
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NXP Semiconductors |
WIDE BAND MEDIUM POWER |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.