NXP Semiconductors - BGY687,112

  1. Home
  2. NXP Semiconductors - BGY687,112
BGY687,112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY687,112
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 40 MHz; Additional Features: LOW NOISE, HIGH RELIABILITY; Construction: MODULE;
Datasheet BGY687,112 Datasheet
In Stock1,191
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 240 mA
Minimum Operating Temperature: -20 Cel
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 600 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 22 dB
Power Supplies (V): 24
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,191 - -

Popular Products

Category Top Products

HMC998APM5E by Analog Devices

HMC998APM5E

Analog Devices

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.
BLM7G1822S-20PBGY by NXP Semiconductors

BLM7G1822S-20PBGY

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOP16(UNSPEC); No. of Functions: 2;
HMC636ST89ETR by Analog Devices

HMC636ST89ETR

Analog Devices

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
ERA-3SM+ by Mini-circuits

ERA-3SM+

Mini-circuits

Mini-circuits ERA-3SM+ is a wideband low power RF amplifier with 15.4 dB gain and 50 ohm impedance. It operates from 0 to 3000 MHz, handling up to 13 dBm CW input power. Ideal for surface mount applications in RF and microwave systems, it has a compact plastic/epoxy package and requires only a 3V supply.
HMC606LC5TR-R5 by Analog Devices

HMC606LC5TR-R5

Analog Devices

Analog Devices' HMC606LC5TR-R5 is a wide band low power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 2-18 GHz. It can handle up to 15 dBm CW input power and operates in temperatures from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact component design.
MGA-62563-BLK by Agilent Technologies

MGA-62563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;
TQP7M9102 by Triquint Semiconductor

TQP7M9102

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 400 MHz; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 27 dBm; Maximum Operating Frequency: 4000 MHz; Construction: COMPONENT;
HMC409LP4E by Hittite Microwave

HMC409LP4E

Hittite Microwave

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 28 dB;
MGA-53543-BLKG by Agilent Technologies

MGA-53543-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Additional Features: LOW NOISE;
A64 by TE Connectivity

A64

TE Connectivity

TE Connectivity's A64 is a RF & Microwave Amplifier with a metal package body. It operates at temperatures ranging from 0 to 50 °C and requires a power supply of 15V. With 4 terminals and a max supply current of 38mA, it is suitable for various applications in the field of RF and microwave amplification.
HMC635LC4TR by Hittite Microwave

HMC635LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 70 Cel;
MGA-81563-TR2G by Broadcom

MGA-81563-TR2G

Broadcom

Broadcom's MGA-81563-TR2G is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features surface mounting and requires a 3V power supply with a max current draw of 51 mA.
MAX2611EUS+T by Analog Devices

MAX2611EUS+T

Analog Devices

MAX2611EUS+T by Analog Devices is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.
MSA-1105-STRG by Broadcom

MSA-1105-STRG

Broadcom

Broadcom's MSA-1105-STRG is a RF & Microwave Amplifier with 10dB gain, operating from 50MHz to 1300MHz. Featuring a max input power of 13dBm and VSWR of 1.7, it is ideal for wideband low-power applications requiring a characteristic impedance of 50Ω.
SGL0363ZSR by Qorvo

SGL0363ZSR

Qorvo

The Qorvo SGL0363ZSR is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring high performance in a compact package.
TQP3M9028 by Qorvo

TQP3M9028

Qorvo

The Qorvo TQP3M9028 is a wide band medium power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. Suitable for surface mount applications in RF and microwave systems, it has a plastic/epoxy package body and requires a 5V power supply.
HMC-AUH312 by Analog Devices

HMC-AUH312

Analog Devices

HMC-AUH312 by Analog Devices is a GAAS technology RF amplifier with 10 dB gain, operating from 500 MHz to 80 GHz. It has a max input power of 10 dBm and requires an 8V power supply. Ideal for wide band low power applications, this component is designed for surface mounting with a characteristic impedance of 50 ohms.
HMC441LH5 by Analog Devices

HMC441LH5

Analog Devices

HMC441LH5 by Analog Devices is a wide band medium power RF amplifier with 10.5 dB gain, operating from 7-15.5 GHz. It has a max input power of 15 dBm, suitable for RF & microwave applications requiring high performance in a compact ceramic package.
HMC460LC5TR by Analog Devices

HMC460LC5TR

Analog Devices

HMC460LC5TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handling up to 18 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.
HMC794LP3ETR by Hittite Microwave

HMC794LP3ETR

Hittite Microwave

WIDE BAND LOW POWER;