NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY687	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
BGE788C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			325 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	33.2 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGY68,112	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			6.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	75 MHz
BGY887,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY66B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	120 MHz
BGD904L,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					380 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
934056365115	NXP Semiconductors	NARROW BAND LOW POWER										COMPONENT			50 ohm			15 dB		Tin (Sn)		e3
BGY67B/2	NXP Semiconductors	WIDE BAND LOW POWER													75 ohm								5 MHz	120 MHz
BGE88	NXP Semiconductors				PLASTIC/EPOXY	HYBRID					330 mA		24	SOT-115C		RF/Microwave Amplifiers	100 Cel		-20 Cel
SE5212AFE	NXP Semiconductors	WIDE BAND LOW POWER															125 Cel		-55 Cel		LOW NOISE		100 MHz
BGY212A	NXP Semiconductors	NARROW BAND HIGH POWER			CERAMIC	HYBRID		1	10 dBm	8		COMPONENT	3.5	SOT-482C	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				1710 MHz	1785 MHz
BGD506	NXP Semiconductors	WIDE BAND HIGH POWER							16.25 dBm			MODULE			75 ohm		100 Cel	22.1 dB	-20 Cel		LOWNOISE		40 MHz	550 MHz
BGY787	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
934055388112	NXP Semiconductors	WIDE BAND HIGH POWER							16.25 dBm			MODULE			75 ohm		100 Cel	24.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	120 MHz
BGD712	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
NE5200D-T	NXP Semiconductors	WIDE BAND MEDIUM POWER							20 dBm			COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	1200 MHz
SA5204D-T	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel				0 MHz	350 MHz
OM7824	NXP Semiconductors	NARROW BAND LOW POWER
934015620112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
MW6IC2240GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	23 dBm	3	370 mA	COMPONENT	28	MOT CASE 1329A-03	50 ohm	RF/Microwave Amplifiers	85 Cel	25.5 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
BGA7027,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			195 mA		5	TO-243		RF/Microwave Amplifiers				TIN		e3
MW6IC2240NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	23 dBm	3	370 mA	COMPONENT	28	MOT CASE 1329-09	50 ohm	RF/Microwave Amplifiers	85 Cel	25.5 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
BGY885A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
MRFIC0930R2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			3 dBm		12 mA	COMPONENT	2.8	SOP8,.25		RF/Microwave Amplifiers	70 Cel	17 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
934056624115	NXP Semiconductors	WIDE BAND LOW POWER							0 dBm			COMPONENT			50 ohm			28 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGY110B	NXP Semiconductors	NARROW BAND MEDIUM POWER							3 dBm	50		MODULE			50 ohm		90 Cel						872 MHz	905 MHz
NE5204N	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel	16 dB	0 Cel				0 MHz	350 MHz
BGD108	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	36.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	450 MHz
CA912	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY				17 dBm		760 mA		15	MOT CASE 714P-01	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel				40 MHz	860 MHz
NE5209D	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	850 MHz
BGA3018	NXP Semiconductors	WIDE BAND MEDIUM POWER																		TIN		e3
BGY885B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGY588C,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			345 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
BGY588N	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
NE5219D-T	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	700 MHz
BGX885N,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID					240 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
BGM1012	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		19 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
BGY587B,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		1	6.25 dBm		340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGF802-20	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
933997410112	NXP Semiconductors	WIDE BAND MEDIUM POWER							6.25 dBm			MODULE			75 ohm		100 Cel	27.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY887B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel		LOW NOISE	e4	40 MHz	860 MHz
NE5205AN	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	600 MHz
934055568112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
NE5204AD-T	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	350 MHz
BGY84A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		200 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGY132	NXP Semiconductors	NARROW BAND HIGH POWER							23 dBm	3		COMPONENT			50 ohm		90 Cel	22.6 dB	-20 Cel				68 MHz	88 MHz
934068534115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	7 mA	COMPONENT	0.8/1.8		50 ohm		85 Cel	10.5 dB	-40 Cel				2300 MHz	2690 MHz
BGD712,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.