NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY916/5	NXP Semiconductors	NARROW BAND HIGH POWER							19 dBm	2		MODULE			50 ohm		90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
CGY2013GBE-T	NXP Semiconductors	NARROW BAND HIGH POWER							2 dBm						50 ohm		85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
BGY585A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
OM926/E	NXP Semiconductors	WIDE BAND LOW POWER								2.3		MODULE			75 ohm								10 MHz	2050 MHz
BLM6G22-30G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	LDMOS	IEC-60134	1		5		COMPONENT			50 ohm		200 Cel	27.5 dB		TIN			2100 MHz	2200 MHz
SE5205N	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		125 Cel	16.5 dB	-55 Cel				0 MHz
934059236112	NXP Semiconductors	WIDE BAND HIGH POWER										COMPONENT			75 ohm		100 Cel	33.7 dB	-20 Cel				40 MHz	550 MHz
SA5204AN-T	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	350 MHz
CGY2021G-T	NXP Semiconductors	NARROW BAND HIGH POWER							2 dBm			COMPONENT					85 Cel	34 dB	-20 Cel		IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ		1710 MHz	1785 MHz
AFSC5G35E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	30	LCC26,.24X.4,40	50 ohm		125 Cel	29.3 dB		NICKEL PALLADIUM GOLD		e4	3400 MHz	3700 MHz
A2I20H080GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
BGY925	NXP Semiconductors	NARROW BAND HIGH POWER							19 dBm	2		MODULE			50 ohm		90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
A2I08H040GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
BGY885A/02,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			240 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
BGY110E	NXP Semiconductors	NARROW BAND MEDIUM POWER							4.77 dBm	2		COMPONENT			50 ohm		90 Cel	32.3 dB					872 MHz	905 MHz
934055954112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	20.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
UAA3592HN	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	0 dBm		50 mA	COMPONENT	2.7,3.6	LCC16,.16SQ,25		RF/Microwave Amplifiers	70 Cel		-30 Cel				1920 MHz	1980 MHz
MW4IC2230MBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	2110 MHz	2170 MHz
BGY113G	NXP Semiconductors	NARROW BAND HIGH POWER							7 dBm	2		COMPONENT			50 ohm		90 Cel	35.5 dB	-30 Cel				470 MHz	520 MHz
SA5205AN-T	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	600 MHz
BGD601	NXP Semiconductors	WIDE BAND LOW POWER										MODULE			75 ohm		100 Cel	12.7 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
934059057115	NXP Semiconductors	WIDE BAND LOW POWER							-10 dBm			COMPONENT			50 ohm		85 Cel	25 dB	-40 Cel	TIN	LOW NOISE	e3	100 MHz	3000 MHz
934057925115	NXP Semiconductors	WIDE BAND LOW POWER							-10 dBm			COMPONENT			50 ohm			19 dB		TIN		e3	100 MHz	3000 MHz
BGY32	NXP Semiconductors	NARROW BAND HIGH POWER							23 dBm	1.5		COMPONENT			50 ohm		90 Cel						68 MHz	88 MHz
BGY112B	NXP Semiconductors	NARROW BAND HIGH POWER							3 dBm	2		MODULE			50 ohm		90 Cel						132 MHz	156 MHz
SE5205AN-T	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		125 Cel		-55 Cel				0 MHz	600 MHz
934023600112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGD812	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGY110A	NXP Semiconductors	NARROW BAND MEDIUM POWER							3 dBm	50		MODULE			50 ohm		90 Cel						824 MHz	849 MHz
934067781115	NXP Semiconductors	NARROW BAND LOW POWER
UGY1088,118	NXP Semiconductors		SURFACE MOUNT	32	PLASTIC/EPOXY			1			300 mA		24	LCC32,.2SQ,20		RF/Microwave Amplifiers
933793490112	NXP Semiconductors	WIDE BAND HIGH POWER							16.25 dBm			MODULE			75 ohm		100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
SA5209N-T	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	850 MHz
BGD712C,112	NXP Semiconductors				PLASTIC/EPOXY			1			410 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
BGY67A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	23.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
BGA3015	NXP Semiconductors	WIDE BAND MEDIUM POWER																		Tin (Sn)		e3
AFIC31025GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
BGS8H2X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.67	7.8 mA	COMPONENT	1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	9.2 dB	-40 Cel				2300 MHz	2690 MHz
OM926ESMD	NXP Semiconductors	WIDE BAND LOW POWER								1.7		MODULE											950 MHz	2050 MHz
BGY2016,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20.79 dBm	2		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-10 Cel				1805 MHz	1990 MHz
934068191115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	.002 mA	COMPONENT	1.8	SOLCC6,.03,16	50 ohm								1559 MHz	1610 MHz
BGD504	NXP Semiconductors	WIDE BAND HIGH POWER							16.25 dBm			MODULE			75 ohm		100 Cel	20.2 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
NE5204AN	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	350 MHz
MDE6IC9120GNR1	NXP Semiconductors				PLASTIC/EPOXY	MOS		2					28	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MHW2821-1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	3	500 mA	COMPONENT	12.5	MOT CASE 301AB-02	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-30 Cel				806 MHz	870 MHz
MW4IC915GNBR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS		1		5		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Matte Tin (Sn)	IT CAN ALSO OPERATE AT 921 TO 960 MHZ	e3	860 MHz	960 MHz
BGA7124	NXP Semiconductors	WIDE BAND MEDIUM POWER							20 dBm			COMPONENT			50 ohm		85 Cel	14.5 dB	-40 Cel				400 MHz	2700 MHz
BGF1901-10	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1		2	280 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-20 Cel				1930 MHz	1990 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.