NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
CA5800C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		18 dBm	2.6	440 mA	MODULE	28	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
SA5219N-T	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	700 MHz
934055390112	NXP Semiconductors	WIDE BAND HIGH POWER						16.25 dBm			MODULE			75 ohm		90 Cel	23.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
NE5212AN	NXP Semiconductors	WIDE BAND LOW POWER														70 Cel		0 Cel		LOW NOISE			140 MHz
MDE6IC9120NR1	NXP Semiconductors				PLASTIC/EPOXY	MOS	2					28	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
BGY202	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	28.5 dB	-30 Cel				890 MHz	915 MHz
BGY785AD/8M	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID	1			265 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGA3022	NXP Semiconductors	WIDE BAND MEDIUM POWER
CA2832C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		5 dBm	2		MODULE	28	SOT-115J	50 ohm	RF/Microwave Amplifiers	90 Cel	34 dB	-20 Cel		HIGH RELIABILITY		1 MHz	200 MHz
BGU6101	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT					85 Cel	4 dB	-40 Cel	Tin (Sn)		e3	40 MHz	4000 MHz
934065568112	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	26 dB	-20 Cel	GOLD	LOW NOISE	e4	40 MHz	1003 MHz
935056440623	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel		-40 Cel
NE5212AD	NXP Semiconductors	WIDE BAND LOW POWER														70 Cel		0 Cel		LOW NOISE			140 MHz
BGY114A	NXP Semiconductors	NARROW BAND HIGH POWER						4.77 dBm	2		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				824 MHz	849 MHz
BGD802,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGD885	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				450 mA	MODULE	24	SOT-115D	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
934056689127	NXP Semiconductors	NARROW BAND HIGH POWER						20 dBm	2		COMPONENT			50 ohm		90 Cel	27 dB	-20 Cel				920 MHz	960 MHz
BGA7027,135	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY		1			195 mA		5	TO-243		RF/Microwave Amplifiers				TIN		e3
MW6IC2420NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	23 dBm	3	370 mA	MODULE	28	MOT CASE 1329-09	50 ohm	RF/Microwave Amplifiers		25.5 dB		Matte Tin (Sn)		e3
OM337	NXP Semiconductors	WIDE BAND LOW POWER							1.8		MODULE											40 MHz	860 MHz
BGY885B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
934005650112	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	16.5 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
SA2411DH	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1				COMPONENT	3	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	2400 MHz	2500 MHz
BGD906MI	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY685A/04	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY		1			240 mA		24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE		40 MHz	600 MHz
BGY136	NXP Semiconductors	NARROW BAND HIGH POWER						24.77 dBm	3		COMPONENT			50 ohm		90 Cel		-20 Cel				146 MHz	174 MHz
BLM7G22S-60PBG,118	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY		2					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
BGD704	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CA4812C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		14 dBm	2.6	400 mA	MODULE	12	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
A2I20H060GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																	TIN		e3
BGA7127,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY		1			325 mA		5	SOLCC8,.12,20		RF/Microwave Amplifiers
BGY119B	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				872 MHz	905 MHz
SA5204AD	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1		1.5	33 mA	COMPONENT	6	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	350 MHz
BGY2016	NXP Semiconductors	NARROW BAND HIGH POWER						20.79 dBm	2		MODULE			50 ohm		90 Cel	28 dB	-10 Cel				1805 MHz	1990 MHz
SA5204AN	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	350 MHz
BGU3063J	NXP Semiconductors	WIDE BAND LOW POWER
CA4815C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		14 dBm	2.6		MODULE	15	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGA7130,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY		1			550 mA		5	SOLCC8,.12,20		RF/Microwave Amplifiers
MW4IC2020GMBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	1805 MHz	1990 MHz
BGA3015,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY		1			125 mA		8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
MW6IC2015NBR1	NXP Semiconductors	NARROW BAND HIGH POWER						20 dBm	3		COMPONENT			50 ohm		85 Cel	24 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
A2I20D040GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
OM2070B	NXP Semiconductors	WIDE BAND LOW POWER							1.9		MODULE						30 dB					40 MHz	860 MHz
BGY1816	NXP Semiconductors	NARROW BAND HIGH POWER			CERAMIC		1	20.79 dBm	1.6		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	24 dB	-10 Cel				1805 MHz	1880 MHz
BGE788,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				320 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGY114E	NXP Semiconductors	NARROW BAND HIGH POWER						4.77 dBm	3		COMPONENT			50 ohm		100 Cel	37.8 dB	-30 Cel				890 MHz	950 MHz
934057501135	NXP Semiconductors	WIDE BAND LOW POWER						15 dBm			COMPONENT			50 ohm			12 dB		TIN		e3	850 MHz	2500 MHz
BGD812,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.