NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGA6589,135	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	15 dBm		89 mA	COMPONENT	9	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3	850 MHz	2500 MHz
NE5219N-T	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	700 MHz
BGY113F	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	2		COMPONENT			50 ohm		90 Cel	35.5 dB	-30 Cel				430 MHz	470 MHz
BGY209	NXP Semiconductors	NARROW BAND HIGH POWER						16.02 dBm	3		COMPONENT			50 ohm		100 Cel	21.8 dB	-30 Cel				880 MHz	915 MHz
MDE6IC7120NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	2	30 dBm	10		COMPONENT	28	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers		32 dB		Matte Tin (Sn)		e3	728 MHz	768 MHz
934056948115	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm			16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGY113E	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	2		COMPONENT			50 ohm		90 Cel	35.5 dB	-30 Cel				400 MHz	440 MHz
SA5209D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				55 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	850 MHz
934058247115	NXP Semiconductors	WIDE BAND LOW POWER						-10 dBm			COMPONENT			50 ohm		85 Cel	24 dB	-40 Cel	TIN	LOW NOISE	e3	100 MHz	3000 MHz
BGA3023	NXP Semiconductors	WIDE BAND MEDIUM POWER
BGY888	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE	e4	40 MHz	860 MHz
MWIC930GR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS	1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	746 MHz	960 MHz
OM335	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID						24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
BGY112C	NXP Semiconductors	NARROW BAND HIGH POWER						3 dBm	2		MODULE			50 ohm		90 Cel						146 MHz	174 MHz
BGY206	NXP Semiconductors	NARROW BAND HIGH POWER						11.14 dBm	2.5		MODULE			50 ohm		100 Cel	30 dB	-30 Cel				880 MHz	915 MHz
BGY118B	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				872 MHz	905 MHz
MW4IC2230NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
CGY2020G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		2 dBm		1.3 mA	COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
BGY1916	NXP Semiconductors	NARROW BAND HIGH POWER			CERAMIC	HYBRID	3	20.79 dBm	1.6		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	24 dB	-10 Cel				1930 MHz	1990 MHz
MRFIC0970	NXP Semiconductors		SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	1					3.2	LCC20,.16SQ,20		RF/Microwave Amplifiers
BGS67A,112	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1			95 mA	COMPONENT	12	DILCC8,.46	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
BGY588C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			345 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	33.7 dB	-20 Cel				40 MHz	550 MHz
MRFIC1869	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY		2				COMPONENT	3.6	LCC32,.2SQ,20		RF/Microwave Amplifiers	100 Cel		-35 Cel
BGY580	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		200 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	12.5 dB	-20 Cel		LOWNOISE		40 MHz	550 MHz
BGA7024	NXP Semiconductors	WIDE BAND MEDIUM POWER						25 dBm			COMPONENT			50 ohm		85 Cel	13.5 dB	-40 Cel	TIN		e3	400 MHz	2700 MHz
MMM5062	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY		1	10 dBm	10		COMPONENT	1.8,2.8,3.5	DIE OR CHIP	50 ohm		100 Cel		-35 Cel				824 MHz	849 MHz
BGY82	NXP Semiconductors	WIDE BAND LOW POWER						16.25 dBm			MODULE			75 ohm		100 Cel	13.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGD814	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
934055587115	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm			16 dB			LOW NOISE		900 MHz	1800 MHz
BGY585A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY148A	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		13 dBm	3	.1 mA	MODULE	6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				400 MHz	440 MHz
MMG1001R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
BGY135	NXP Semiconductors	NARROW BAND HIGH POWER						24.77 dBm	3		COMPONENT			50 ohm		90 Cel		-20 Cel				132 MHz	156 MHz
934044720112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY1085A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1000 MHz
AFLP5G25641T6	NXP Semiconductors
BGE787B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGS8M4UK	NXP Semiconductors	NARROW BAND LOW POWER
CGY2106TS	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	15.8 dB	-40 Cel				800 MHz	920 MHz
BGY204	NXP Semiconductors	NARROW BAND HIGH POWER						3 dBm	2.5		MODULE			50 ohm		100 Cel	35 dB	-30 Cel				880 MHz	915 MHz
BGY282	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	12	CERAMIC	HYBRID	2	10 dBm	3		COMPONENT	3.5	LCC12(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
SA5205FE	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		85 Cel	16.5 dB	-40 Cel				0 MHz	400 MHz
934064958115	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm			16 dB		TIN	LOW NOISE	e3	0 MHz	2200 MHz
BGD904,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY113C	NXP Semiconductors	NARROW BAND HIGH POWER						7 dBm	2					50 ohm		90 Cel	38.5 dB	-30 Cel				470 MHz	520 MHz
A3I20X050NR3	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel				1800 MHz	2200 MHz
A3M40PD012T7	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	25 dBm	1.38	300 mA	COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		125 Cel	30 dB					2300 MHz	4200 MHz
AFSC5G23E37T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	28	LCC26,.24X.4,20	50 ohm		125 Cel	32 dB			I/P POWER-MAX (PEAK)=25DBM		2300 MHz	2400 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.