NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY67A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	23.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
BGY67,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	21.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
NE5205AN-T	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	600 MHz
BLM7G1822S-20PBY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	FL16(UNSPEC)		RF/Microwave Amplifiers
934059505112	NXP Semiconductors	NARROW BAND HIGH POWER										MODULE			75 ohm		100 Cel	21 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
SA2410-T	NXP Semiconductors	NARROW BAND LOW POWER										COMPONENT			50 ohm		85 Cel	29 dB	-40 Cel				2400 MHz	2500 MHz
BGA7124,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY			1			200 mA		3.3/5	SOLCC8,.12,20		RF/Microwave Amplifiers
BGY835C,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			340 mA		24	SOT-115J		RF/Microwave Amplifiers
BGY96B	NXP Semiconductors	NARROW BAND HIGH POWER							17 dBm	2		MODULE			50 ohm		90 Cel		-30 Cel				890 MHz	915 MHz
BGF802-20,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGY118D	NXP Semiconductors	NARROW BAND MEDIUM POWER							7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				898 MHz	928 MHz
934058246115	NXP Semiconductors	WIDE BAND LOW POWER							-10 dBm			COMPONENT			50 ohm			20 dB		MATTE TIN		e3	100 MHz	3000 MHz
SA5204AD-T	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	350 MHz
OM2061	NXP Semiconductors	WIDE BAND LOW POWER								1.7		MODULE			75 ohm								40 MHz	860 MHz
BGM1012,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		19 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
MW5IC2030MBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm			COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB		Tin/Lead (Sn/Pb)		e0	1930 MHz	1990 MHz
MW4IC915GMBR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY			1		5		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 921 TO 960 MHZ	e0	860 MHz	960 MHz
934065355115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			75 ohm		70 Cel	10 dB	-10 Cel	TIN		e3	40 MHz	1000 MHz
CGY2032BTS	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm		800 mA	COMPONENT	3.2	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-30 Cel				1880 MHz	1900 MHz
A3M37TL039	NXP Semiconductors
BLM7G22S-60PB,118	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	FL16(UNSPEC)		RF/Microwave Amplifiers
934027320114	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
934057503135	NXP Semiconductors	WIDE BAND MEDIUM POWER							15 dBm			COMPONENT			50 ohm			15 dB		TIN		e3	850 MHz	2500 MHz
CGY2010G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			1.5 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel		-20 Cel				880 MHz	915 MHz
CA2810C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33 dB	-20 Cel		HIGH RELIABILITY		10 MHz	450 MHz
934055586115	NXP Semiconductors	NARROW BAND LOW POWER										COMPONENT			50 ohm			19.5 dB		Pure Tin (Sn)	LOW NOISE		900 MHz	1800 MHz
BGY201	NXP Semiconductors	NARROW BAND HIGH POWER							3 dBm	2		COMPONENT			50 ohm		90 Cel	41.5 dB	-30 Cel				890 MHz	915 MHz
OM17066	NXP Semiconductors	NARROW BAND LOW POWER
934066566115	NXP Semiconductors	NARROW BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	17.6 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
SA5205D-T	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel	16.5 dB	-40 Cel				0 MHz	550 MHz
OM2064	NXP Semiconductors	WIDE BAND LOW POWER								1.5		MODULE			75 ohm								40 MHz	860 MHz
MDE6IC7120GNR1	NXP Semiconductors	NARROW BAND HIGH POWER							30 dBm	10		COMPONENT			50 ohm			32 dB		Matte Tin (Sn)		e3	728 MHz	768 MHz
BGA3012	NXP Semiconductors	WIDE BAND MEDIUM POWER							20 dBm			COMPONENT			75 ohm		85 Cel	11 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	5 MHz	1006 MHz
SA5205AD	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1		1.5	33 mA	COMPONENT	6	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				0 MHz	600 MHz
BGA7017,135	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			100 mA		5	TO-243		RF/Microwave Amplifiers
934069191115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.67	7.8 mA	COMPONENT	1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	9.2 dB	-40 Cel				2300 MHz	2690 MHz
934057924115	NXP Semiconductors	WIDE BAND LOW POWER							-10 dBm			COMPONENT			50 ohm			18 dB		TIN		e3	100 MHz	3000 MHz
934056906115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			16 dB		TIN	LOW NOISE	e3	100 MHz	3000 MHz
BGD816L	NXP Semiconductors	WIDE BAND HIGH POWER				HYBRID		1			375 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
CGY2010G-T	NXP Semiconductors	NARROW BAND HIGH POWER							1.5 dBm			COMPONENT					85 Cel		-20 Cel				880 MHz	915 MHz
SA5204N	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		85 Cel	16 dB	-40 Cel				0 MHz	350 MHz
BGD104	NXP Semiconductors	WIDE BAND LOW POWER							16.25 dBm			MODULE			75 ohm		100 Cel	19.5 dB	-20 Cel				40 MHz	450 MHz
BGY119C	NXP Semiconductors		SURFACE MOUNT	4	CERAMIC	HYBRID							4.8	SMSIP4,4GNDFLNG		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)		e0
BGY35	NXP Semiconductors	NARROW BAND HIGH POWER							24.77 dBm	1.5		COMPONENT			50 ohm		90 Cel						132 MHz	156 MHz
934064661115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			75 ohm		70 Cel	5 dB	-10 Cel	TIN		e3	40 MHz	1000 MHz
BGD902MI	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	900 MHz
MW6IC2015GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
AFLP5G35645T6	NXP Semiconductors

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.