NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MW5IC2030NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB		Matte Tin (Sn)		e3	1930 MHz	1990 MHz
935030700623	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4
BGE885,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115D	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
OM2060	NXP Semiconductors	WIDE BAND LOW POWER							1.6		MODULE						23 dB			LOW NOISE		40 MHz	860 MHz
BGY96A	NXP Semiconductors	NARROW BAND HIGH POWER						17 dBm	2		MODULE			50 ohm		90 Cel		-30 Cel				824 MHz	851 MHz
BGS8324Z	NXP Semiconductors	NARROW BAND LOW POWER
BLM7G1822S-40ABY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY		2					28	FL16(UNSPEC)		RF/Microwave Amplifiers
934019200112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1000 MHz
BGY43	NXP Semiconductors	NARROW BAND HIGH POWER						24.8 dBm	1.5		COMPONENT			50 ohm		90 Cel						148 MHz	174 MHz
MW6IC1940NBR1	NXP Semiconductors	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3	440 mA	COMPONENT	28	MOT CASE 1329-09	50 ohm	RF/Microwave Amplifiers	150 Cel	26 dB		Matte Tin (Sn)		e3	1920 MHz	2000 MHz
BGD502,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.8 dB	-20 Cel	Gold (Au)	LOW NOISE	e4	40 MHz	550 MHz
BGY47B	NXP Semiconductors	NARROW BAND HIGH POWER						19.5 dBm	2					50 ohm		90 Cel	18 dB	-30 Cel				460 MHz	520 MHz
934042750112	NXP Semiconductors	NARROW BAND HIGH POWER						6.25 dBm			MODULE			75 ohm		100 Cel	29.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	75 MHz
BGD704,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGA6289,135	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	15 dBm		96 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers		12 dB		Tin (Sn)		e3	850 MHz	2500 MHz
BGM1014	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	-10 dBm		25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
BGA6489,135	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	15 dBm		86 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3	850 MHz	2500 MHz
934059507112	NXP Semiconductors	WIDE BAND HIGH POWER						28 dBm			MODULE					100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGR269	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			175 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	200 MHz
CA4800CS	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		14 dBm	2.6	240 mA	MODULE	24	MOT CASE 714T-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
934019190112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
NE5204D-T	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		70 Cel	16 dB	0 Cel				0 MHz	350 MHz
SA5209D	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				55 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	850 MHz
SA2410BE	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	29 dB	-40 Cel				2400 MHz	2500 MHz
MW5IC2030GMBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm			COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB					1930 MHz	1990 MHz
OM926	NXP Semiconductors		THROUGH HOLE MOUNT	8	PLASTIC/EPOXY	HYBRID						12	SIP8,.06		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
BGR269,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			175 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	200 MHz
934063838115	NXP Semiconductors	NARROW BAND LOW POWER									COMPONENT			50 ohm		85 Cel	14 dB	-40 Cel	TIN	LOW NOISE	e3	1713 MHz	1851 MHz
BGD906L	NXP Semiconductors	WIDE BAND LOW POWER									MODULE			75 ohm		100 Cel	22 dB	-20 Cel		LOW NOISE		40 MHz	900 MHz
OM339	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID						24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
BGY148B	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID		13 dBm	3	.1 mA	MODULE	6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				430 MHz	488 MHz
MW5IC970NBR1	NXP Semiconductors	WIDE BAND HIGH POWER							10		COMPONENT			50 ohm			26.5 dB		TIN		e3	132 MHz	960 MHz
934056323115	NXP Semiconductors	NARROW BAND LOW POWER							1.7		COMPONENT			50 ohm			27 dB			IT CAN ALSO OPERATE AT 800 TO 2500 MHZ		824 MHz	849 MHz
934032050112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
934015670112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
BGY114C	NXP Semiconductors	NARROW BAND HIGH POWER						4.77 dBm	2		COMPONENT			50 ohm		100 Cel	39 dB	-30 Cel				890 MHz	915 MHz
BGY683	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	14.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
BGY110D	NXP Semiconductors	NARROW BAND MEDIUM POWER						4.77 dBm	2		COMPONENT			50 ohm		90 Cel	32.3 dB					824 MHz	849 MHz
CGY2013G-T	NXP Semiconductors	NARROW BAND HIGH POWER						2 dBm			COMPONENT			50 ohm		85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
AFSC5G26F38T2	NXP Semiconductors																		NICKEL PALLADIUM GOLD		e4
934027290112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
NE5200D	NXP Semiconductors	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	1200 MHz
BGY205	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	CERAMIC	HYBRID		8.5 dBm	2		MODULE	6	SMSIP4,4GNDFLNG	50 ohm	RF/Microwave Amplifiers	100 Cel	32.5 dB	-30 Cel				880 MHz	915 MHz
CGY2013G/C1	NXP Semiconductors	NARROW BAND HIGH POWER						2 dBm						50 ohm		85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
BGY588N,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGS8L4UK	NXP Semiconductors	NARROW BAND MEDIUM POWER
934027320112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
AFLP5G35645	NXP Semiconductors	NARROW BAND MEDIUM POWER

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.