NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BLM7G24S-30BGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			1					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
CGY2023G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			2 dBm			COMPONENT	3.3	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
MMG1001T1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
BGY587,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGF944,127	NXP Semiconductors	NARROW BAND HIGH POWER			METAL			1	20 dBm	2	300 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	27 dB	-20 Cel				920 MHz	960 MHz
934005490112	NXP Semiconductors	WIDE BAND MEDIUM POWER										MODULE			75 ohm		100 Cel	16.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
934056740127	NXP Semiconductors	NARROW BAND HIGH POWER							20 dBm	2		COMPONENT			50 ohm		90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGY47A	NXP Semiconductors	NARROW BAND HIGH POWER							19.5 dBm	2		MODULE			50 ohm		90 Cel						400 MHz	470 MHz
BGY120A	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID			7 dBm	3	.1 mA	MODULE	3.6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				824 MHz	849 MHz
934056630115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			23.2 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGY208	NXP Semiconductors	NARROW BAND HIGH POWER							10 dBm	3		COMPONENT			50 ohm		100 Cel	30.7 dB	-30 Cel				880 MHz	915 MHz
BGD906	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
MWE6IC9100NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1		10		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		31 dB		Matte Tin (Sn)		e3	869 MHz	960 MHz
MWIC930GNR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS		1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Matte Tin (Sn)		e3	746 MHz	960 MHz
OM2070	NXP Semiconductors	WIDE BAND MEDIUM POWER								1.9		MODULE						28 dB			LOW NOISE		40 MHz	860 MHz
BGY87	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	21.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
MWIC930NR1	NXP Semiconductors	WIDE BAND HIGH POWER								5		COMPONENT			50 ohm		115 Cel	28 dB	-30 Cel	TIN		e3	746 MHz	960 MHz
SA5209N	NXP Semiconductors	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					55 mA	COMPONENT	5	DIP16,.3	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	850 MHz
BGY1085A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1000 MHz
BGD804,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGY85A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGY685AD	NXP Semiconductors	WIDE BAND MEDIUM POWER										MODULE			75 ohm		100 Cel	18.75 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
AFIC10275GNR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
CGY2014ATW	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		2	10 dBm		300 mA	COMPONENT	2.8,3.5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-20 Cel		IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ		880 MHz	915 MHz
BGD508	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID		1			625 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	36.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	550 MHz
BGY122ATRAY	NXP Semiconductors	NARROW BAND MEDIUM POWER							7 dBm	3					50 ohm		100 Cel	27.8 dB	-30 Cel				824 MHz	849 MHz
BGS8324	NXP Semiconductors
BGS67A	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1			95 mA	COMPONENT	12	DILCC8,.46	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
BGU6009/N2X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	.002 mA	COMPONENT	1.8	SOLCC6,.03,16	50 ohm								1559 MHz	1610 MHz
CGY2013G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			2 dBm		3 mA	COMPONENT	3.3	QFP48,.35SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
BGA7014,135	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			85 mA		5	TO-243		RF/Microwave Amplifiers
BGR69	NXP Semiconductors	NARROW BAND HIGH POWER										MODULE			75 ohm		100 Cel	34.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
BGY207	NXP Semiconductors	NARROW BAND MEDIUM POWER							7 dBm	3		COMPONENT			50 ohm		100 Cel	27.8 dB	-30 Cel				880 MHz	915 MHz
NE5205FE	NXP Semiconductors	WIDE BAND LOW POWER								1.5		COMPONENT			50 ohm		70 Cel	16.5 dB	0 Cel				0 MHz	400 MHz
BGY916/5,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	19 dBm	2		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
BGY241	NXP Semiconductors	NARROW BAND HIGH POWER		4	PLASTIC/EPOXY	HYBRID		1	10 dBm	3		COMPONENT	3.5	MODULE,4LEAD,.67	50 ohm	RF/Microwave Amplifiers	100 Cel	35.2 dB	-30 Cel				880 MHz	915 MHz
934065667147	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT					85 Cel	5 dB	-40 Cel	TIN		e3	40 MHz	4000 MHz
MRFIC0916T1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			10 dBm		5.6 mA	COMPONENT	2.7	SOT-143R	50 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
BGY925/5	NXP Semiconductors	NARROW BAND HIGH POWER							19 dBm	2		MODULE			50 ohm		90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
5209/BEA	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT					125 Cel	14 dB	-55 Cel				400 MHz
MWE6IC9100NR1	NXP Semiconductors	NARROW BAND HIGH POWER								10		COMPONENT			50 ohm			31 dB		Matte Tin (Sn)		e3	869 MHz	960 MHz
AFLP5G25641	NXP Semiconductors	NARROW BAND MEDIUM POWER
934055914112	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BYG118B	NXP Semiconductors	NARROW BAND HIGH POWER																					872 MHz	905 MHz
CGY2011G-T	NXP Semiconductors	NARROW BAND HIGH POWER							1.5 dBm			COMPONENT					85 Cel		-20 Cel				880 MHz	915 MHz
SA5209D-T	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	850 MHz
MWIC930R1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS		1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	746 MHz	960 MHz
BGA7027	NXP Semiconductors	WIDE BAND MEDIUM POWER							28 dBm			COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	TIN		e3	400 MHz	2700 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.