NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MHL9236MN	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY			1	10 dBm	1.5	620 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				800 MHz	960 MHz
CGD1046HI,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			465 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
MMH3111NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	20 dBm		190 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		10 dB		Matte Tin (Sn)		e3	250 MHz	4000 MHz
MHL18926N	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	18 dBm	1.5	1150 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	27.1 dB	-20 Cel				1805 MHz	1880 MHz
MHW1254LA	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			110 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel				5 MHz	65 MHz
CGD985HC	NXP Semiconductors	NARROW BAND HIGH POWER
MHW1346	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR		1			350 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	34.5 dB	-20 Cel				5 MHz	200 MHz
CGY887B,112	NXP Semiconductors	WIDE BAND HIGH POWER				HYBRID		1			325 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	28 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
MD8IC970GNR1	NXP Semiconductors	NARROW BAND HIGH POWER							30 dBm	10		COMPONENT			50 ohm		150 Cel	31.5 dB		TIN		e3	850 MHz	940 MHz
MHW1915	NXP Semiconductors	NARROW BAND HIGH POWER	THROUGH HOLE MOUNT	7				1	17 dBm	2		COMPONENT	5,26		50 ohm		85 Cel	29 dB	-30 Cel				1930 MHz	1990 MHz
MHVIC915R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel				746 MHz	960 MHz
MHPA19010	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	HYBRID		1	20 dBm	2		COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel				1930 MHz	1990 MHz
MHW9186AN	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	18 dB	-20 Cel				40 MHz	870 MHz
CGY1047	NXP Semiconductors	NARROW BAND HIGH POWER										MODULE			75 ohm		100 Cel	27 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1003 MHz
MHW6182	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR			21.25 dBm		240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				40 MHz	550 MHz
MHW1345	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	BIPOLAR		1	5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	-20 Cel				10 MHz	200 MHz
935295974115	NXP Semiconductors	WIDE BAND LOW POWER
CGY887	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			250 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel				40 MHz	870 MHz
MHW9182B	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID					240 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel				40 MHz	1000 MHz
MHW1304LA	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1			110 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				5 MHz	65 MHz
935296912115	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm			23.7 dB		TIN	LOW NOISE	e3	0 MHz	2200 MHz
MMG2001NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			440 mA	COMPONENT	24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	21 dB	-20 Cel				40 MHz	870 MHz
MMZ38333BT1	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm	1.58	1200 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			36.3 dB		TIN		e3	3400 MHz	3800 MHz
MHW7342	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					350 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	33.8 dB	-20 Cel				40 MHz	750 MHz
MHW9267	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			460 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
MHW8227	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
MMRF2006NT1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
MD7IC1812NR1	NXP Semiconductors	NARROW BAND HIGH POWER																		TIN		e3
935289297115	NXP Semiconductors	WIDE BAND MEDIUM POWER							25 dBm			COMPONENT			50 ohm		85 Cel	13.5 dB	-40 Cel	TIN		e3	400 MHz	2700 MHz
MHL9125	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			20 dBm	1.5	760 mA	COMPONENT	15	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				800 MHz	960 MHz
CGD942C,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1					24	SOT-115J		RF/Microwave Amplifiers
935298613115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.08	85 mA	COMPONENT	5	SOLCC8,.08SQ,20	50 ohm		85 Cel		-40 Cel				2000 MHz	6000 MHz
MHL8018	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID			14 dBm	2.6	240 mA	COMPONENT	28	MOT CASE 448-01	50 ohm	RF/Microwave Amplifiers	100 Cel	17.5 dB	-20 Cel		LOW NOISE		40 MHz	1000 MHz
935223940557	NXP Semiconductors	NARROW BAND HIGH POWER							2 dBm						50 ohm		85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
MD7IC2755GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		2	30 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		23 dB		MATTE TIN		e3	2500 MHz	2700 MHz
MHL19338N	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	10 dBm	1.5	525 mA	COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				1900 MHz	2000 MHz
MC13852EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		6.5 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.4 dB	-30 Cel				400 MHz	1000 MHz
CGY1041	NXP Semiconductors	NARROW BAND HIGH POWER										MODULE			75 ohm		100 Cel	21 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
MHW9227AN	NXP Semiconductors	WIDE BAND HIGH POWER										MODULE			75 ohm		100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
CGY1043,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			280 mA		24	SOT-115J		RF/Microwave Amplifiers
935294008115	NXP Semiconductors	WIDE BAND LOW POWER
MHW9186	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			265 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	18 dB	-20 Cel				40 MHz	870 MHz
MHW1253LA	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			110 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel				5 MHz	200 MHz
MHW1224	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel				5 MHz	200 MHz
MHW8272AN	NXP Semiconductors	WIDE BAND MEDIUM POWER										MODULE			75 ohm		100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
MMRF2010NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS		1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
935289303118	NXP Semiconductors	WIDE BAND MEDIUM POWER							25 dBm			COMPONENT			50 ohm			10.5 dB					400 MHz	2700 MHz
CGD914,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	19.75 dBm		375 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.2 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.