NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MHW7185CL	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID				385 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel				40 MHz	750 MHz
CGY1049	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	29 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
MHW9236N	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	23 dB	-20 Cel				40 MHz	870 MHz
MML25231HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT	1	20 dBm		65 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			14.2 dB		TIN		e3	1000 MHz	4000 MHz
MHW1815	NXP Semiconductors	NARROW BAND HIGH POWER			METAL	HYBRID		17 dBm	3		COMPONENT	5,26	MOT CASE 301AK-01	50 ohm	RF/Microwave Amplifiers	85 Cel	30 dB	-30 Cel				1805 MHz	1880 MHz
MMA20312BT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1	14 dBm		77 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		23.6 dB		Matte Tin (Sn)		e3	1800 MHz	2200 MHz
935290049115	NXP Semiconductors	WIDE BAND LOW POWER						-16.5 dBm			COMPONENT			50 ohm		85 Cel	18.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MHL19926N	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	17 dBm	1.5	1050 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	27.9 dB	-20 Cel				1930 MHz	1990 MHz
935293343118	NXP Semiconductors	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-40 Cel				500 MHz	1500 MHz
MHL18926	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	18 dBm	1.5	1150 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	27.6 dB	-20 Cel				1805 MHz	1880 MHz
MHW8185L	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				385 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
MHW7292	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		6.25 dBm		350 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				40 MHz	750 MHz
MHW10188AN	NXP Semiconductors	NARROW BAND HIGH POWER									COMPONENT			75 ohm		100 Cel	20 dB	-20 Cel				40 MHz	1000 MHz
MC13820	NXP Semiconductors	WIDE BAND LOW POWER						10 dBm			COMPONENT					85 Cel	13 dB	-30 Cel				1000 MHz	2400 MHz
MHW8227AN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
MML20242HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1			207 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MHW8292	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		6.25 dBm		350 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				40 MHz	860 MHz
CGY1049,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID	1			280 mA		24	SOT-115J		RF/Microwave Amplifiers
MML09231HT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1			70 mA		5	SOLCC8,.08,20		RF/Microwave Amplifiers				Tin (Sn)		e3
935290055115	NXP Semiconductors	WIDE BAND LOW POWER						-21 dBm			COMPONENT			50 ohm		85 Cel	28.1 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MHVIC2115NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1		3		COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		31 dB					1600 MHz	2600 MHz
MHW9206N	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19.6 dB	-20 Cel				47 MHz	870 MHz
MHW9186N	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18 dB	-20 Cel				40 MHz	870 MHz
MHV5IC1810NR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	12 dBm	3		COMPONENT	28	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	26.5 dB			IT CAN ALSO OPERATE AT 1930 TO 1990 MHZ		1805 MHz	1990 MHz
935290056115	NXP Semiconductors	WIDE BAND LOW POWER						-15 dBm			COMPONENT			50 ohm		85 Cel	22.8 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MHW10186N	NXP Semiconductors	WIDE BAND HIGH POWER									COMPONENT			75 ohm		100 Cel	18 dB	-20 Cel				40 MHz	1000 MHz
MHL9236M	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY		1	10 dBm	1.5	620 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	29.5 dB	-20 Cel				800 MHz	960 MHz
MMRF2007GNR1	NXP Semiconductors	WIDE BAND HIGH POWER																	TIN		e3
MBC13917EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS	1	10 dBm		5.6 mA	COMPONENT	2.7	SOLCC6,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel				100 MHz	2500 MHz
MHW9242A	NXP Semiconductors	WIDE BAND MEDIUM POWER			METAL	HYBRID				350 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	24 dB	-20 Cel				40 MHz	1000 MHz
CGY1043	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	23 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
MHW8185	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	860 MHz
MMA20312BVT1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	BIPOLAR	1	14 dBm		77 mA	COMPONENT	5	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers		23.6 dB		MATTE TIN		e3	1800 MHz	2200 MHz
CGD942C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	28 dBm			MODULE	24	SOT-115J		RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
CGD987HC	NXP Semiconductors	NARROW BAND HIGH POWER
MHW9188A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				47 MHz	870 MHz
MHW8242A	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				350 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24 dB	-20 Cel				40 MHz	860 MHz
MC13852EPR2	NXP Semiconductors	WIDE BAND LOW POWER
MHW8182C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	18.2 dB	-20 Cel				40 MHz	860 MHz
MC13821	NXP Semiconductors	WIDE BAND LOW POWER						10 dBm			COMPONENT					85 Cel	13 dB	-30 Cel				1000 MHz	2400 MHz
935294011115	NXP Semiconductors	WIDE BAND LOW POWER						-26 dBm			COMPONENT			50 ohm		85 Cel	23.7 dB	-40 Cel	TIN	LOW NOISE	e3	0 MHz	2200 MHz
MHW7185C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	750 MHz
MHW8242AN	NXP Semiconductors	WIDE BAND MEDIUM POWER									MODULE			75 ohm		100 Cel	24 dB	-20 Cel				40 MHz	860 MHz
MHW9146	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1			260 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	1 dB	-20 Cel				40 MHz	870 MHz
CGD1040HI,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID	1			460 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
MML09211HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1	20 dBm		90 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers		19 dB		Matte Tin (Sn)		e3	400 MHz	1400 MHz
MHW8205L	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				385 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	19.8 dB	-20 Cel				40 MHz	870 MHz
CGY1032	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	32 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.