NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
935317726528	NXP Semiconductors	WIDE BAND HIGH POWER																		Tin (Sn)		e3
MW7IC2240NBR1	NXP Semiconductors	NARROW BAND HIGH POWER							20 dBm	5		COMPONENT			50 ohm		150 Cel	28 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
BGA2776T/R	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			23.2 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
MMG3011NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		48 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		13.5 dB		MATTE TIN		e3	0 MHz	6000 MHz
MW7IC3825NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	45 dBm	10		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21 dB		Matte Tin (Sn)		e3	3400 MHz	3600 MHz
MW7IC915NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS		1	4.7 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		35 dB		TIN		e3	728 MHz	960 MHz
BGU7003	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel	Tin (Sn)		e3	40 MHz	6000 MHz
MMG3008NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		48 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		17 dB		MATTE TIN		e3	0 MHz	6000 MHz
BGA2874	NXP Semiconductors	WIDE BAND LOW POWER																		Tin (Sn)		e3
BGA2816	NXP Semiconductors	WIDE BAND LOW POWER										COMPONENT			50 ohm		85 Cel	24.8 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	0 MHz	2200 MHz
935316208528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS		1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	Tin (Sn)		e3	1030 MHz	1090 MHz
935323877528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	Tin (Sn)		e3	3400 MHz	3800 MHz
MW7IC2220GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz
BGU7008,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY		AEC-Q100	1			15.9 mA		1.8	SOLCC6,.04,20		RF/Microwave Amplifiers	125 Cel		-40 Cel	TIN		e3
BGA2748T/R	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			18.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	2000 MHz
BGA2011,115	NXP Semiconductors	NARROW BAND LOW POWER										COMPONENT			50 ohm			15 dB		Tin (Sn)		e3
BGA2012,115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			10 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB		Tin (Sn)		e3
MW7IC930GNR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		33 dB		TIN	IT CAN ALSO OPERATE AT 728 TO 768 MHZ	e3	920 MHz	960 MHz
935318587147	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT		1	20 dBm		65 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm			14.2 dB		Tin (Sn)		e3	1000 MHz	4000 MHz
BGA2776,115	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			23.2 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
935325969147	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm		415 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			23.5 dB		Tin (Sn)		e3	1500 MHz	2700 MHz
BGU8062J	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm					NICKEL PALLADIUM GOLD		e4	1500 MHz	2700 MHz
BGU7044	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.67	38 mA	COMPONENT	3.3	TSSOP6,.08	75 ohm		85 Cel	14 dB	-40 Cel	Tin (Sn)		e3	40 MHz	1000 MHz
MMG3005NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		520 mA	COMPONENT	5	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers		14 dB					800 MHz	2200 MHz
MMG3007NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		55 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		18 dB		Matte Tin (Sn)		e3	0 MHz	6000 MHz
BGU7003W,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			15 mA		2.5	SOLCC6,.04,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
MMG3014N	NXP Semiconductors	NARROW BAND HIGH POWER								5		COMPONENT			50 ohm			15 dB					2110 MHz	2170 MHz
935373851528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
BGU7004	NXP Semiconductors	NARROW BAND LOW POWER							0 dBm			COMPONENT			50 ohm		125 Cel	13 dB	-40 Cel	PURE TIN			1559 MHz	1610 MHz
935307341118	NXP Semiconductors	NARROW BAND LOW POWER
BGU7051	NXP Semiconductors	WIDE BAND LOW POWER							20 dBm			COMPONENT			50 ohm		85 Cel	19.5 dB	-40 Cel				500 MHz	1500 MHz
MHL21336NN	NXP Semiconductors	NARROW BAND HIGH POWER			METAL			1	5 dBm	1.5	525 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				2110 MHz	2170 MHz
BGU7052	NXP Semiconductors	WIDE BAND LOW POWER
BGA2711T/R	NXP Semiconductors	WIDE BAND LOW POWER							10 dBm			COMPONENT			50 ohm			13.9 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
935318716528	NXP Semiconductors	NARROW BAND HIGH POWER																		Tin (Sn)		e3
BGA2011	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			20 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3
935337471147	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	30 dBm	1.58	1200 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm			36.3 dB		Tin (Sn)		e3	3400 MHz	3800 MHz
935313779528	NXP Semiconductors	WIDE BAND HIGH POWER																		Tin (Sn)		e3
BGA2002,115	NXP Semiconductors				PLASTIC/EPOXY	BIPOLAR	AEC-Q100	1					2.5	SOT-343R		RF/Microwave Amplifiers				Tin (Sn)		e3
MW7IC18100NR1	NXP Semiconductors	NARROW BAND HIGH POWER								5		COMPONENT			50 ohm			27 dB		Matte Tin (Sn)		e3	1805 MHz	2050 MHz
BGA2001,115	NXP Semiconductors	NARROW BAND LOW POWER										COMPONENT			50 ohm			19.5 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	1800 MHz
MW7IC2240NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20 dBm	5	420 mA	COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	28 dB		TIN		e3	2000 MHz	2200 MHz
935317025147	NXP Semiconductors	WIDE BAND MEDIUM POWER
MMG3013NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	12 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		16 dB		MATTE TIN		e3	0 MHz	6000 MHz
BGA2771T/R	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		45 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20.8 dB		Tin (Sn)		e3	1000 MHz	2000 MHz
BGU8019	NXP Semiconductors	NARROW BAND LOW POWER							10 dBm			COMPONENT			50 ohm		85 Cel	18.5 dB	-40 Cel	TIN		e3	1559 MHz	1610 MHz
BGU8L1UK	NXP Semiconductors	WIDE BAND LOW POWER
MW7IC2220NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20 dBm	5		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB		Matte Tin (Sn)		e3	2000 MHz	2200 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.