NXP Semiconductors RF & Microwave Amplifiers 1,307

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY586	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	22 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
934061561132	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel	9 dB	-40 Cel				40 MHz	6000 MHz
SA5219D	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				50 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
OM3056/20	NXP Semiconductors	WIDE BAND LOW POWER							2.1		MODULE			75 ohm								950 MHz	2050 MHz
BGY83	NXP Semiconductors	WIDE BAND LOW POWER									MODULE			75 ohm		100 Cel	14.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
CGY2100UH	NXP Semiconductors	WIDE BAND MEDIUM POWER									COMPONENT			50 ohm		85 Cel		-40 Cel		LOW NOISE			2800 MHz
BGY115C/P	NXP Semiconductors	NARROW BAND MEDIUM POWER						7 dBm	6					50 ohm		100 Cel		-30 Cel				890 MHz	915 MHz
SA5209D,623	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	850 MHz
BGY152	NXP Semiconductors	NARROW BAND HIGH POWER																				400 MHz	470 MHz
BGE787B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
CGY2023G-T	NXP Semiconductors	NARROW BAND HIGH POWER						2 dBm			COMPONENT					85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
BGE788C,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID	1			325 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
934044650114	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGD602	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
BGD740N	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel		-20 Cel		LOW NOISE		40 MHz	750 MHz
BGD602D	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				440 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
NE5205AD	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	600 MHz
934056621135	NXP Semiconductors	NARROW BAND HIGH POWER						10 dBm	3		COMPONENT			50 ohm		100 Cel		-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
BGY85H/01	NXP Semiconductors	WIDE BAND LOW POWER									MODULE			75 ohm		100 Cel	20.2 dB	-20 Cel				40 MHz	450 MHz
MW4IC2020GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
934051200112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
NE5205D-T	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		70 Cel	16.5 dB	0 Cel				0 MHz	550 MHz
BGD802N	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
934059506112	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	23 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
934056628115	NXP Semiconductors	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm			18.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	2000 MHz
934055279112	NXP Semiconductors	NARROW BAND HIGH POWER						6.25 dBm			MODULE			75 ohm		100 Cel	29.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	75 MHz
BGD702N	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGD106	NXP Semiconductors	WIDE BAND LOW POWER									MODULE			75 ohm		100 Cel	22.1 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGU6104,147	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		1			40 mA	COMPONENT	3	SOLCC6,.08,20		RF/Microwave Amplifiers	85 Cel	5 dB	-40 Cel	TIN		e3	40 MHz	4000 MHz
BGY172	NXP Semiconductors	NARROW BAND HIGH POWER						3 dBm	2		COMPONENT			50 ohm		90 Cel	37 dB	-30 Cel				800 MHz	870 MHz
OM2082	NXP Semiconductors	WIDE BAND LOW POWER							1.4		MODULE											40 MHz	860 MHz
BGD502	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.8 dB	-20 Cel		LOW NOISE	e4	40 MHz	550 MHz
934065143112	NXP Semiconductors	NARROW BAND HIGH POWER									MODULE			75 ohm		100 Cel	29 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	1003 MHz
SA5200D-T	NXP Semiconductors	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	1200 MHz
MMG1001NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
SA5205AD-T	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		85 Cel	17 dB	-40 Cel				0 MHz	600 MHz
BGY148BT/R	NXP Semiconductors	NARROW BAND HIGH POWER						13 dBm	3		COMPONENT			50 ohm		100 Cel	24.8 dB	-30 Cel				430 MHz	488 MHz
934015610112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGY887	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
SA5219N	NXP Semiconductors	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	16	PLASTIC/EPOXY	BIPOLAR				50 mA	COMPONENT	5	DIP16,.3	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	700 MHz
BGY145B	NXP Semiconductors	NARROW BAND HIGH POWER						26.53 dBm	2		MODULE			50 ohm		90 Cel						146 MHz	174 MHz
BGE885	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115D	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE	e4	40 MHz	860 MHz
OM323	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID				105 mA		24	SIP10,.07TB		RF/Microwave Amplifiers	100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0
BGA7020,135	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY		1			130 mA		5	TO-243		RF/Microwave Amplifiers
SA5205AN	NXP Semiconductors	WIDE BAND LOW POWER							1.5		COMPONENT			50 ohm		85 Cel		-40 Cel				0 MHz	600 MHz
BGY67BO	NXP Semiconductors	WIDE BAND LOW POWER						7 dBm			MODULE			75 ohm		85 Cel		-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	300 MHz
NE5209N-T	NXP Semiconductors	WIDE BAND LOW POWER									COMPONENT			50 ohm		70 Cel		0 Cel				0 MHz	850 MHz
BGE85A	NXP Semiconductors				PLASTIC/EPOXY	HYBRID				230 mA		24	SOT-115C		RF/Microwave Amplifiers	100 Cel		-20 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.