Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
55 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-247AD |
e3 |
71 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
330 W |
96 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
210 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
180 ns |
|||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
460 W |
95 A |
PLASTIC/EPOXY |
POWER CONTROL |
4.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
485 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
60 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
480 W |
86 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
411 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
84 ns |
|||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
395 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
450 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
30 V |
7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
53 ns |
AEC-Q101 |
|||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
223 W |
56 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
290 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
30 V |
7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
46 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
598 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||
|
Semikron International |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
598 A |
UNSPECIFIED |
POWER CONTROL |
2.2 V |
UNSPECIFIED |
RECTANGULAR |
1 |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
UL RECOGNIZED |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
46 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
862 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
86 ns |
|||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 W |
6 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
222 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.75 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
17.3 ns |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
238 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
TO-263AB |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
156 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
287 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220 |
e3 |
35 ns |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
187 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
388 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
50 ns |
AEC-Q101 |
|||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
430 W |
165 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
1 |
249 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
5.6 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
48 ns |
||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
480 W |
140 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
610 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
AVALANCHE RATED, LOW CONDUCTION LOSS |
NOT SPECIFIED |
NOT SPECIFIED |
335 ns |
|||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
379 W |
94 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
465 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
6.5 V |
TIN SILVER COPPER |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
HIGH RELIABILITY |
e1 |
46 ns |
|||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
416 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
610 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
AVALANCHE RATED, LOW CONDUCTION LOSS |
NOT SPECIFIED |
NOT SPECIFIED |
335 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
390 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
15 ns |
161 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||
|
Powerex |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1400 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
Mitsubishi Electric |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
650 W |
200 A |
UNSPECIFIED |
POWER CONTROL |
3 V |
UNSPECIFIED |
RECTANGULAR |
1 |
300 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
SUPER FAST RECOVERY |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
180 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
362 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
330 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
101 ns |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
156 W |
50 A |
PLASTIC/EPOXY |
AUTOMOTIVE IGNITION |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
760 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1000 V |
25 V |
7 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
460 ns |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
165 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
48 ns |
123 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AB |
e3 |
28 ns |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
268 W |
100 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
159 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
6.4 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
RC-IGBT |
TO-247 |
e3 |
40.4 ns |
|||||||||||||||||||||
Fujitsu |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
340 W |
70 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.34 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
355 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
HIGH RELIABILITY |
TO-247 |
95 ns |
||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
750 W |
150 A |
PLASTIC/EPOXY |
POWER CONTROL |
73 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
29 ns |
161 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
MATTE TIN |
SINGLE |
R-PSIP-T3 |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
76 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
2250 W |
650 A |
UNSPECIFIED |
2.15 V |
UNSPECIFIED |
RECTANGULAR |
1 |
830 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
510 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
590 ns |
5 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
180 ns |
||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
24 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
480 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247 |
e3 |
30 ns |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
21 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
357 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
35 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
310 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
38 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
9.6 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
403 ns |
3 |
SMALL OUTLINE |
SILICON |
1200 V |
SINGLE |
R-PSSO-G3 |
COLLECTOR |
HIGH SPEED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
16.1 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
12 A |
PLASTIC/EPOXY |
GENERAL PURPOSE |
GULL WING |
RECTANGULAR |
1 |
335 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
22 ns |
AEC-Q101 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
193 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
-40 Cel |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
AEC-Q101 |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
193 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
-40 Cel |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
55 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
206 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
e3 |
28 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
187 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
382 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
50 ns |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 W |
11 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
730 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
80 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
89 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
590 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
30 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
40 ns |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
48 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.35 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
925 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
5.5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
10 |
260 |
54 ns |
||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 W |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
820 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
900 V |
-55 Cel |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
e3 |
10 |
260 |
48 ns |
|||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
88 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.95 V |
GULL WING |
RECTANGULAR |
1 |
263 ns |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6.9 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
42.8 ns |
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|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
3100 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
1160 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
45 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
178 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
26 ns |
|||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
115 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
260 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
27 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
285 ns |
3 |
FLANGE MOUNT |
SILICON |
1250 V |
-55 Cel |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
260 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
223 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
51.1 ns |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
468 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.6 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
351 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-55 Cel |
20 V |
7 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
56 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.