SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

AUIRGPS4070D0

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

SILICON

600 V

-55 Cel

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AA

NOT SPECIFIED

NOT SPECIFIED

150 ns

AEC-Q101

STGW39NC60VD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

366 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-247AC

e3

46 ns

APT35GP120B2DQ2G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

543 W

96 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e1

36 ns

IXGH40N120B2D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

380 W

75 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

770 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

79 ns

IXXK110N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

880 W

250 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

65 ns

IXBT42N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

360 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

GULL WING

RECTANGULAR

1

1070 ns

2

SMALL OUTLINE

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

224 ns

IXGH48N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

45 ns

GT60M303

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

60 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

2.7 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

170 W

150 Cel

SILICON

900 V

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

460 ns

IXA37IF1200HJ

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195 W

58 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

IN-LINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSIP-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXGN60N60C2D1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

1

210 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

43 ns

UL RECOGNIZED

IXGR40N60C2D1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

56 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

3

IN-LINE

150 Cel

SILICON

600 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e1

38 ns

STGD10NC60KDT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

242 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

23 ns

STGF3NC120HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

6 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

680 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

18.5 ns

FGH20N6S2D

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

28 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

105 ns

205 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

11.5 ns

IXA12IF1200PB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXBK75N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1040 W

200 A

PLASTIC/EPOXY

POWER CONTROL

3.1 V

THROUGH-HOLE

RECTANGULAR

1

840 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSFM-T3

COLLECTOR

TO-264AA

e1

10

260

277 ns

IXGN50N60BD2

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

75 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

1

200 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

FAST

50 ns

IXGQ85N33PCD1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

218 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e3

115 ns

RGS50TSX2DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

53 ns

STGP7NB60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

63 ns

STGW30M65DF2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

258 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

47 ns

GT50J325

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

240 ns

IXBH9N160G

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

9 A

PLASTIC/EPOXY

POWER CONTROL

7 V

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

150 Cel

SILICON

1600 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

340 ns

IXGR48N60C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

56 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

IN-LINE

150 Cel

SILICON

600 V

-55 Cel

20 V

5.5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

ISOLATED

e1

10

260

45 ns

UL RECOGNIZED

IXGT16N170AH1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

190 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

150 ns

330 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

97 ns

IXYH50N65C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

130 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

142 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

56 ns

GT15Q301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

560 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

120 ns

IKZ75N65EH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

415 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

e3

37 ns

IXBH14N300HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

38 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

1910 ns

3

FLANGE MOUNT

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247

810 ns

IXBH20N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

695 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

10

260

608 ns

IXXH80N65B4D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

180 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

222 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

125 ns

IXXN110N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

750 W

230 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

250 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

65 ns

UL RECOGNIZED

IXYH40N120C3D1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

80 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

303 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

95 ns

IXYN100N65C3H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

UPPER

R-PUFM-X4

ISOLATED

62 ns

UL RECOGNIZED

IXA70R1200NA

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

350 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X4

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747; UL RECOGNIZED

IXBT12N300

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

30 A

PLASTIC/EPOXY

POWER CONTROL

3.2 V

GULL WING

RECTANGULAR

1

720 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

3000 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

204 ns

IXBX25N250

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

55 A

PLASTIC/EPOXY

POWER CONTROL

3.3 V

THROUGH-HOLE

RECTANGULAR

1

650 ns

3

IN-LINE

150 Cel

SILICON

2500 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

694 ns

IXGH40N60B2D1

IXYS Corporation

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

390 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

38 ns

IXXH60N65B4H1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

145 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

208 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

10

260

94 ns

RGT16BM65DTL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

94 W

16 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

170 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

30 V

7 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

e3

27 ns

RGTH60TS65DGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

58 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

179 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

67 ns

GT50J102

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

300 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

600 V

20 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

400 ns

GT50J301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

300 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

600 V

20 V

8 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

HGT1N40N60A4D

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

110 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

95 ns

240 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

UPPER

R-PUFM-X4

1

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

47 ns

IXA12IF1200HB

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

125 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXA4IF1200UC

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

9 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

350 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

110 ns

IEC-60747

IXBF50N360

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

70 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

1880 ns

3

IN-LINE

150 Cel

SILICON

3600 V

-55 Cel

20 V

5 V

SINGLE

R-PSIP-T3

ISOLATED

889 ns

IXBH24N170

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

1285 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

-55 Cel

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AD

e3

10

260

190 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.