SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

RJH65T46DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

215 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

75 ns

RJH60D0DPM-00-T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

55 ns

RJH60T4DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235.8 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

157 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

131 ns

RJH1CV7DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

465 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

98 ns

RJH60C9DPD-00-J2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

10 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

290 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

75 ns

RJH6087BDPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

223.2 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

80 ns

MBN600C20

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4000 W

600 A

UNSPECIFIED

POWER CONTROL

5.4 V

UNSPECIFIED

RECTANGULAR

1

4000 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

2000 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, HIGH SPEED, LOW NOISE

1600 ns

RJH60F5BDPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

163 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

87 ns

MBN300GS12A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

300 A

POWER CONTROL

1

SILICON

1200 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

400 ns

RJH65T47DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

68 ns

RJH1CD5DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

55 ns

RJH1CF5RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192.3 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

102 ns

RJH60F4DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235.8 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

145 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

62 ns

MBN1200GR12A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1200 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

SQUARE

1

1400 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

S-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

800 ns

RJH60D3DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

35 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

45 ns

RJH1CM5DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260.4 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

225 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

58 ns

RJP4006AGE-00-P5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 A

PLASTIC/EPOXY

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.2 V

DUAL

R-PDSO-C8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RJH60D5DPM-00-T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

RJH1CF6RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227.2 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

409 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

116 ns

RJH60M3DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

113 W

35 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

45 ns

RJH60D0DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

RJH60F6DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

186 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

65 ns

RJH60D1DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

117 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

43 ns

RBN40H125S1FPQ-A0#CB0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

319 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.34 V

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

FLANGE MOUNT

175 Cel

SILICON

1250 V

30 V

7.1 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

39 ns

RJH1BF6RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227.2 W

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

289 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1100 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

93 ns

RJH65D27BDPQ-A0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

100 A

PLASTIC/EPOXY

POWER CONTROL

1.65 V

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

55 ns

RJH1DF7RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1350 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

136 ns

MBL150GS6P

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-X7

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

300 ns

MBN600C33

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

600 A

POWER CONTROL

1

SILICON

3300 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

1200 ns

RJH60F6DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

297.6 W

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

205 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

138 ns

RJH60D2DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

CY25BAJ-8F-T23

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

150 Cel

SILICON

400 V

TIN LEAD

DUAL

R-PDSO-G8

Not Qualified

e0

RJH1BF6RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227.2 W

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

289 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1100 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

93 ns

CT90AM-18

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

25 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

150 ns

RJH1BF7RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1100 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

136 ns

RJH60F3DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178.5 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

157 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

140 ns

RJH65T14DPQ-A0#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

68 ns

RJH60D1DPE-00-J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

16 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

RJH1CF7RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

140 ns

RJH1CF7RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

140 ns

RJH60D2DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

63 W

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

140 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

60 ns

RJP4010AGE-00#P5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

C BEND

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.2 V

DUAL

R-PDSO-C8

RJH60D7DPK

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

106 ns

RJH1CF5RDPQ-80-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192.3 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

382 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

102 ns

RJH60F3DPK-00-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178.5 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

157 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

140 ns

RJH60M1DPE-00#J3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

16 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

43 ns

RJH60D0DPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

85 ns

RJH1DF7RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.55 V

THROUGH-HOLE

RECTANGULAR

1

352 ns

3

FLANGE MOUNT

150 Cel

SILICON

1350 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

136 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.