SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IHW15N120R2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

30 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

432 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.4 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

IHW20N135R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

288 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

1350 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

ZCN9150ASTOF

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

ZCN9150A

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

475 ns

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

14 ns

ZCN9150ASTZ

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

DGTD120T40S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

387 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

132 ns

DGTD65T60S2PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

HIGH SPEED SWITCHING

TO-247

e3

260

83 ns

DGTD65T50S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

399 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.2 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

117 ns

DGTD65T40S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

341 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

112 ns

MIL-STD-202

ZCN9150ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

ZCN9150ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

DGTD65T40S2PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

162 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

48 ns

DGTD65T15H2TF

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

30

260

46 ns

ZCN9150ASTOE

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

GT50JR21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

210 ns

370 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

NOT SPECIFIED

NOT SPECIFIED

250 ns

GT15J311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

500 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

ST1200FXF21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

7100 W

1200 A

CERAMIC, METAL-SEALED COFIRED

MOTOR CONTROL

UNSPECIFIED

ROUND

1

2500 ns

4

DISK BUTTON

Insulated Gate BIP Transistors

125 Cel

SILICON

3300 V

20 V

END

O-CEDB-X4

Not Qualified

5500 ns

GT8G134

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1800 ns

8

SMALL OUTLINE

150 Cel

SILICON

400 V

DUAL

R-PDSO-G8

Not Qualified

800 ns

GT50J121

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

240 ns

MG500Q1US2

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

HIGH SPEED

MG100Q1JS9

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

CHOPPER SWITCH

MG200Q1JS9

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

CHOPPER SWITCH

MG300Q1US42

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

300 A

1

SILICON

1200 V

Not Qualified

MG200Q1US11

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X4

Not Qualified

GT8Q101(SM)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

700 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

400 ns

MG300H1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

4

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

800 ns

MG600Q1US65H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5400 W

600 A

UNSPECIFIED

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

900 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

300 ns

GT40T302

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

830 ns

3

FLANGE MOUNT

150 Cel

SILICON

1500 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

850 ns

GT15J331

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

15 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

230 ns

470 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

260 ns

GT15J311(SM)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MG50Q1ZS50

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

78 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

1

600 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

200 ns

GT40T321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

540 ns

3

FLANGE MOUNT

175 Cel

SILICON

1500 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

240 ns

GT10J301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

90 W

10 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

300 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

90 W

150 Cel

SILICON

600 V

20 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

400 ns

GT60J323

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

410 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

25 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

230 ns

MG600Q1US61

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5400 W

600 A

UNSPECIFIED

MOTOR CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

600 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

500 ns

GT25Q301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

680 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

300 ns

GT10J312(SM)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

10 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

400 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT5J311(SM)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

300 ns

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT8G151

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

POWER CONTROL

FLAT

RECTANGULAR

1

2200 ns

8

SMALL OUTLINE

SILICON

400 V

DUAL

R-PDSO-F8

2400 ns

GT25Q102

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

25 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

680 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

300 ns

GT60M303(Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

60 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

THROUGH-HOLE

RECTANGULAR

1

400 ns

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

460 ns

GT5J301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT30J311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

150 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

e0

400 ns

MG300N1US42

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

300 A

1

SILICON

1000 V

Not Qualified

ST2000GXH31

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

12500 W

2000 A

UNSPECIFIED

MOTOR CONTROL

3.2 V

UNSPECIFIED

ROUND

1

13000 ns

4

DISK BUTTON

125 Cel

SILICON

4500 V

-40 Cel

20 V

UNSPECIFIED

O-XXDB-X4

HIGH RELIABILITY

1400 ns

GT8G131

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

8 A

PLASTIC/EPOXY

7 V

GULL WING

RECTANGULAR

1

2400 ns

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G8

Not Qualified

e0

1700 ns

GT60J323(Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

260 ns

410 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

230 ns

MG500Q1US21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.