SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IKA15N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35.7 W

14.7 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

291 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SWITCHING SPEED

TO-220AB

e3

32 ns

IKQ100N60TA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

TO-247

83 ns

AEC-Q101

IKA15N65ET6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35.3 W

34 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

159 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

52 ns

IRGPC40KD2-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AD

e0

70 ns

IKW50N65SS5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

274 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

183 ns

3

FLANGE MOUNT

175 Cel

SILICON CARBIDE

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

31 ns

IRG4PC40UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

330 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

92 ns

IRG4IBC20UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11.4 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

55 ns

SKB04N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

9.4 A

PLASTIC/EPOXY

POWER CONTROL

19 ns

GULL WING

RECTANGULAR

1

125 ns

368 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

e3

245

38 ns

IRG4PH40KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

MOTOR CONTROL

3.4 V

THROUGH-HOLE

RECTANGULAR

1

330 ns

730 ns

3

FLANGE MOUNT

160 W

150 Cel

SILICON

1200 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

82 ns

IRGP6690DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

483 W

140 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

305 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

159 ns

IRG41BC30KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

17 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

ULTRAFAST, HIGH SPEED

e3

60 ns

IRG4PC30KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

120 ns

370 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

e3

100 ns

IKW30N65NL5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227 W

85 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

514 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

5.8 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

76 ns

IRG4BC20FD-STRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

16 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

610 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

63 ns

IRG7RC10FDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

16.5 A

PLASTIC/EPOXY

POWER CONTROL

49 ns

1.85 V

GULL WING

RECTANGULAR

1

26 ns

250 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

104 ns

-55 Cel

30 V

351 ns

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

70 ns

IRGB6B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

45 ns

IRG4BC10SD-S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1780 ns

2

SMALL OUTLINE

SILICON

600 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

106 ns

BSM150GAR120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

210 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

670 ns

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

300 ns

IRGB4056D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

24 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

143 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

48 ns

IHW20N120R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

30 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

685 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.4 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

92 ns

IKW30N65H5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

188 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

246 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

31 ns

IRG4BC20UD-STRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

13 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

170 ns

320 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

55 ns

IKFW60N60DH3E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

141 W

53 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

219 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

60 ns

IKFW60N65ES5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

138 W

77 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

161 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

47 ns

IRGP4690D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

120 ns

IKW30N65ET7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

188 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.65 V

THROUGH-HOLE

RECTANGULAR

1

256 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

32 ns

IRG4PC30UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

62 ns

IRG7PH46UD-EP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

108 A

PLASTIC/EPOXY

POWER CONTROL

60 ns

THROUGH-HOLE

RECTANGULAR

1

60 ns

680 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

80 ns

IRGPC20KD2-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

10 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

SILICON

600 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

SHORT CIRCUIT RATED

TO-247AD

e0

87 ns

IRG7PSH50UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

462 W

116 A

PLASTIC/EPOXY

POWER CONTROL

60 ns

THROUGH-HOLE

RECTANGULAR

1

65 ns

650 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AA

e3

70 ns

IKD04N60R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

8 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

342 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252

e3

260

20 ns

IRG4BC15UD-STRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

400 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

37 ns

IRG4BC20UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

13 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

55 ns

IRGPS60B120KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

411 ns

3

IN-LINE

150 Cel

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

104 ns

IRG4PC40FD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

49 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

670 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

96 ns

IKW75N60TA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

401 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

69 ns

AEC-Q101

IRG4BC30FD-STRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

230 ns

620 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

69 ns

IKW25T120XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

790 ns

3

IN-LINE

150 Cel

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

82 ns

IRG41BC30KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

17 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

ULTRAFAST, HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

60 ns

AUIRGF65G40D0

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

625 W

62 A

PLASTIC/EPOXY

POWER CONTROL

29 ns

2.2 V

THROUGH-HOLE

RECTANGULAR

1

32 ns

157 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

82 ns

-55 Cel

20 V

195 ns

5.5 V

SINGLE

R-PSFM-T3

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

47 ns

AEC-Q101

IKP28N65ES5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

130 W

38 A

PLASTIC/EPOXY

POWER CONTROL

1.9 V

THROUGH-HOLE

RECTANGULAR

1

236 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

54 ns

IRGB5B120KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

132 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

39 ns

IKW40N60H3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

306 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

249 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

48 ns

IRG4BC30FD-S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

620 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

225

69 ns

IKW30N65NL5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

514 ns

3

FLANGE MOUNT

SILICON

650 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

76 ns

IRG4BC10KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

9 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

410 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

78 ns

IKW15T120XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

85 ns

IRGP4790DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

160 ns

-40 Cel

20 V

305 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

120 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.