SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGP4790D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

140 A

PLASTIC/EPOXY

POWER CONTROL

90 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

260 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

160 ns

-40 Cel

20 V

305 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

120 ns

IRGPS40B120UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

357 ns

3

IN-LINE

150 Cel

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

115 ns

IRG4PC40UD-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

330 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

e3

92 ns

IRGP50B60PD1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

161 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

39 ns

IKD03N60RFBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53.6 W

5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

265 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

18 ns

IKQ40N120CT2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

530 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

74 ns

IKQ75N120CT2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

938 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

563 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

85 ns

SKB04N60XT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

9.4 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

368 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

38 ns

IRGP50B60PD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

59 ns

BSM150GAL120DN2E3166

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

210 A

UNSPECIFIED

GENERAL PURPOSE SWITCHING

UNSPECIFIED

RECTANGULAR

1

670 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

FAST

300 ns

IRG7PK35UD1-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

95 ns

225 ns

3

FLANGE MOUNT

150 Cel

SILICON

1400 V

-40 Cel

30 V

265 ns

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

IRG4BC20KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

110 ns

380 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

88 ns

IRG4PH50UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

570 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

73 ns

IRG4PC50KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

52 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

72 ns

IRG41BC20KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

ULTRAFAST, HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

54 ns

IHW15T120

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

113 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

85 ns

IKW20N60TAFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

299 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

36 ns

AEC-Q101

IKFW60N60EH3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

164 W

64 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

282 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

63 ns

IKW50N65WR5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

507 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

62 ns

IKA15N65ET6XKSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

17 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

202 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

50 ns

IKW15N120H3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

217 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

49 ns

IRGB20B60PD1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

121 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

25 ns

IRG4PC40FDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

49 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

660 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

96 ns

SKB02N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

6 A

PLASTIC/EPOXY

POWER CONTROL

17 ns

GULL WING

RECTANGULAR

1

80 ns

354 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

245

34 ns

IHW20N120R3XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

538 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

IHW20N135R3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

385 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1350 V

25 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

505 ns

IKFW50N60ET

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

164 W

73 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

378 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

62 ns

IKW40N65RH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

217 ns

3

FLANGE MOUNT

175 Cel

SILICON CARBIDE

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

27 ns

IKW30N65EL5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

227 W

85 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

5.8 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

44 ns

IRG4BC20FD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

16 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

610 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

63 ns

IRGP35B60PD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

142 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

34 ns

IKW50N60TA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

60 ns

AEC-Q101

IRG4IBC20FDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

34 W

14.3 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

610 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

63 ns

IKD03N60RFAATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

265 ns

2

SMALL OUTLINE

SILICON

600 V

-40 Cel

SINGLE

R-PSSO-G2

COLLECTOR

TO-252

NOT SPECIFIED

NOT SPECIFIED

18 ns

AEC-Q101

IRGP4630DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

206 W

47 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

65 ns

IKQ75N120CS6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

880 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

428 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

76 ns

IRG4RC10UDTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

345 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e3

30

260

56 ns

IKW20N65ET7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.65 V

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

26 ns

IRGP20B60PD-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

138 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

25 ns

IRG4BC20UD-STRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

13 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

170 ns

320 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

55 ns

IRGB6B60KDTRR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

45 ns

IRGP30B120KD-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

270 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

Not Qualified

ULTRA FAST

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

75 ns

IRG4PH30KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

637 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

121 ns

IRGBC30FD1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

Not Qualified

FAST

TO-220AB

e3

IRG4BC10UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

38 W

8.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

345 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

56 ns

IRG4BC30UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

62 ns

IRG7PH46UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

108 A

PLASTIC/EPOXY

POWER CONTROL

60 ns

THROUGH-HOLE

RECTANGULAR

1

60 ns

680 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

80 ns

IKFW90N65ES5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

154 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.75 V

THROUGH-HOLE

RECTANGULAR

1

244 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

99 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.