SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

GT50G321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

130 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

540 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

430 ns

MG200Q1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1400 W

200 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

1400 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

MG600Q1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

GT20J301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

130 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

300 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

130 W

150 Cel

SILICON

600 V

20 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

400 ns

GT60J321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

500 ns

800 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

25 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

350 ns

GT60J322

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

60 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

1500 ns

1500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

25 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

350 ns

GT5G103(2-7B5C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

2400 ns

3

IN-LINE

150 Cel

SILICON

400 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE

1100 ns

GT5G102(2-7B5C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

2000 ns

3

IN-LINE

150 Cel

SILICON

400 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

900 ns

GT60M323

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

200 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

25 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

370 ns

GT60M324

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

310 ns

GT5G133

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.83 W

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

2100 ns

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

4 V

DUAL

R-PDSO-F8

Not Qualified

2100 ns

MG300Q1US2

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

300 A

1

SILICON

1200 V

Not Qualified

MG25N1JS1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

5

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X5

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT8G132

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

8 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2200 ns

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G8

Not Qualified

e0

1100 ns

GT10J312

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

400 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT20J311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

GULL WING

RECTANGULAR

1

300 ns

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

120 W

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

GT50N324

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

25 V

SINGLE

R-PSFM-T3

330 ns

GT15J331(2-10S1C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

IN-LINE

150 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

220 ns

MG75N1AS1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

3

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

GT8G121(2-7B5C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

8 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

2100 ns

3

IN-LINE

150 Cel

SILICON

400 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE

2500 ns

GT40J321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

510 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

500 ns

GT60M322

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

390 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

950 V

25 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

620 ns

GT15J341

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

180 ns

ST1000EX21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1000 A

CERAMIC, METAL-SEALED COFIRED

POWER CONTROL

UNSPECIFIED

ROUND

1

1700 ns

4

DISK BUTTON

SILICON

2500 V

END

O-CEDB-X4

2200 ns

MG300J1US51

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1300 W

300 A

UNSPECIFIED

MOTOR CONTROL

300 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

300 ns

200 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

1300 W

150 Cel

SILICON

600 V

400 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

200 ns

MG300Q1US51

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

400 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

1

300 ns

600 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

2500 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

200 ns

MG800J1US51

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

800 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-XUFM-X5

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

GT8G133

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2000 ns

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.4 V

DUAL

R-PDSO-G8

Not Qualified

1700 ns

GT15Q311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

720 ns

3

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN LEAD

SINGLE

R-PSSO-G3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

e0

170 ns

GT50J341

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

270 ns

GT40Q323

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

39 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

25 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

260 ns

GT8Q102(SM)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

8 A

PLASTIC/EPOXY

MOTOR CONTROL

600 ns

4 V

GULL WING

RECTANGULAR

1

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

50 W

150 Cel

SILICON

1200 V

20 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e0

GT30J101

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

155 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

MG25N1ZS1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

5

FLANGE MOUNT

SILICON

1000 V

UPPER

R-PUFM-X5

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

400 ns

MG150J1JS50

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

780 W

150 A

UNSPECIFIED

MOTOR CONTROL

300 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

300 ns

500 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

780 W

150 Cel

SILICON

600 V

20 V

8 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

500 ns

GT8G121(2-7B6C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2100 ns

2

SMALL OUTLINE

150 Cel

SILICON

400 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE

2500 ns

GT40T301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1500 V

25 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

450 ns

GT8G101

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

8 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

2400 ns

3

IN-LINE

SILICON

400 V

SINGLE

R-PSIP-T3

Not Qualified

1100 ns

MG100Q1JS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

670 W

100 A

UNSPECIFIED

POWER CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

670 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

MG240V1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2400 W

240 A

UNSPECIFIED

MOTOR CONTROL

4.5 V

UNSPECIFIED

RECTANGULAR

1

1500 ns

400 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

2400 W

150 Cel

SILICON

1700 V

20 V

8 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

100 ns

MG50J1ZS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

50 A

UNSPECIFIED

MOTOR CONTROL

600 ns

3.5 V

UNSPECIFIED

RECTANGULAR

1

350 ns

780 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

250 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

700 ns

MG600J1US51

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-X5

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

GT30J322

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

e0

300 ns

GT15J341,S4X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

15 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

180 ns

MG150Q1ZS9

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

CHOPPER SWITCH

GT40Q322

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

39 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

210 ns

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

25 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

260 ns

GT50J322

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

130 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

300 ns

MG500Q1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2400 W

500 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

800 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

2900 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

400 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.