Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
130 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
540 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
25 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
430 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1400 W |
200 A |
UNSPECIFIED |
MOTOR CONTROL |
600 ns |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
1400 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
600 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
5 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-PUFM-X5 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
130 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
700 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
130 W |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
240 |
400 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
500 ns |
800 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
25 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
350 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
1500 ns |
1500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
25 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
350 ns |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
5 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
2400 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
400 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
LOW SATURATION VOLTAGE |
1100 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
5 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
2000 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
400 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
900 ns |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
900 V |
25 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
370 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
600 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
900 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
310 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.83 W |
PLASTIC/EPOXY |
FLAT |
RECTANGULAR |
1 |
2100 ns |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
4 V |
DUAL |
R-PDSO-F8 |
Not Qualified |
2100 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
300 A |
1 |
SILICON |
1200 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
5 |
FLANGE MOUNT |
SILICON |
1000 V |
UPPER |
R-PUFM-X5 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.1 W |
8 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2200 ns |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
1100 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
400 ns |
3 |
IN-LINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
120 W |
20 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
300 ns |
500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
120 W |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
250 ns |
700 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1000 V |
25 V |
SINGLE |
R-PSFM-T3 |
330 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
220 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
3 |
FLANGE MOUNT |
SILICON |
1000 V |
UPPER |
R-PUFM-X3 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
8 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
2100 ns |
3 |
IN-LINE |
150 Cel |
SILICON |
400 V |
SINGLE |
R-PSIP-T3 |
COLLECTOR |
Not Qualified |
LOW SATURATION VOLTAGE |
2500 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
510 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
500 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
190 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
210 ns |
390 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
950 V |
25 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
620 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
25 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
180 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1000 A |
CERAMIC, METAL-SEALED COFIRED |
POWER CONTROL |
UNSPECIFIED |
ROUND |
1 |
1700 ns |
4 |
DISK BUTTON |
SILICON |
2500 V |
END |
O-CEDB-X4 |
2200 ns |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1300 W |
300 A |
UNSPECIFIED |
MOTOR CONTROL |
300 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
300 ns |
200 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
1300 W |
150 Cel |
SILICON |
600 V |
400 ns |
20 V |
400 ns |
8 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
2500 W |
400 A |
UNSPECIFIED |
MOTOR CONTROL |
3.6 V |
UNSPECIFIED |
RECTANGULAR |
1 |
300 ns |
600 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
2500 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
800 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
5 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-XUFM-X5 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
240 |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.1 W |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2000 ns |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.4 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
1700 ns |
||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
720 ns |
3 |
SMALL OUTLINE |
150 Cel |
SILICON |
1200 V |
TIN LEAD |
SINGLE |
R-PSSO-G3 |
COLLECTOR |
Not Qualified |
HIGH SPEED SWITCHING |
e0 |
170 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
350 ns |
450 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
25 V |
SINGLE |
R-PSFM-T3 |
270 ns |
|||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
39 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
210 ns |
430 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
25 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
260 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
8 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
600 ns |
4 V |
GULL WING |
RECTANGULAR |
1 |
500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
50 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
e0 |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
155 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
700 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
25 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
5 |
FLANGE MOUNT |
SILICON |
1000 V |
UPPER |
R-PUFM-X5 |
ISOLATED |
Not Qualified |
HIGH SPEED SWITCHING |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
780 W |
150 A |
UNSPECIFIED |
MOTOR CONTROL |
300 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
300 ns |
500 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
780 W |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
240 |
500 ns |
||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
8 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2100 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
400 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
LOW SATURATION VOLTAGE |
2500 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
600 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1500 V |
25 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
450 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
8 A |
PLASTIC/EPOXY |
THROUGH-HOLE |
RECTANGULAR |
1 |
2400 ns |
3 |
IN-LINE |
SILICON |
400 V |
SINGLE |
R-PSIP-T3 |
Not Qualified |
1100 ns |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
670 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
600 ns |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
670 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
240 |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
2400 W |
240 A |
UNSPECIFIED |
MOTOR CONTROL |
4.5 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1500 ns |
400 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
2400 W |
150 Cel |
SILICON |
1700 V |
20 V |
8 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
50 A |
UNSPECIFIED |
MOTOR CONTROL |
600 ns |
3.5 V |
UNSPECIFIED |
RECTANGULAR |
1 |
350 ns |
780 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
250 W |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
700 ns |
||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
600 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
5 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-PUFM-X5 |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
240 |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
Not Qualified |
HIGH SPEED |
e0 |
300 ns |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
25 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
180 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
150 A |
PLASTIC/EPOXY |
UNSPECIFIED |
RECTANGULAR |
1 |
7 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X7 |
Not Qualified |
CHOPPER SWITCH |
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Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
39 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
210 ns |
430 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
25 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
e0 |
260 ns |
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Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
130 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
400 ns |
400 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
300 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
2400 W |
500 A |
UNSPECIFIED |
MOTOR CONTROL |
600 ns |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
800 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
2900 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
HIGH SPEED |
400 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.