SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

GT20J341

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

SILICON

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

200 ns

GT40J322

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

500 ns

GT40Q321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

42 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

720 ns

570 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

250 ns

MG500Q1US11

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

4

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-PUFM-X4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MG600Q1US51

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4100 W

600 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

600 ns

MG300Q1US21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

300 A

1

SILICON

1200 V

Not Qualified

MG100Q1ZS9

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

CHOPPER SWITCH

GT15J301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

400 ns

MG100J1ZS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

100 A

UNSPECIFIED

MOTOR CONTROL

600 ns

3.5 V

UNSPECIFIED

RECTANGULAR

1

350 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

400 W

150 Cel

SILICON

600 V

20 V

6 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

GT10Q311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

700 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

e0

400 ns

GT30J341,Q

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

59 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

250 ns

GT5G102(2-7B6C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2000 ns

2

SMALL OUTLINE

150 Cel

SILICON

400 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

900 ns

MG200Q1US51

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1500 W

300 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

1

300 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

1500 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

MG50H1ZS1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

900 ns

6

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X6

ISOLATED

Not Qualified

HIGH SPEED

600 ns

GT60N321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

330 ns

MG200Q1ZS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1300 W

200 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

1300 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-PUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

GT30J324

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

240 ns

GT8G131(TE12L)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

8 A

PLASTIC/EPOXY

7 V

GULL WING

RECTANGULAR

1

2400 ns

8

SMALL OUTLINE

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

1700 ns

MG600Q1US45

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

GT30J301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

155 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

300 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

155 W

150 Cel

SILICON

600 V

20 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

400 ns

GT15J331(2-10S2C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

370 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

e0

220 ns

MG300Q1US11

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2000 W

300 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-PUFM-X4

Not Qualified

GT40QR21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

NOT SPECIFIED

NOT SPECIFIED

180 ns

GT8G136

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

150 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

3500 ns

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

TIN LEAD

DUAL

R-PDSO-G8

Not Qualified

e0

3200 ns

GT8G103(2-7B6C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

8 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2400 ns

2

SMALL OUTLINE

150 Cel

SILICON

400 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE

1400 ns

GT5J311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

500 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

MG200N1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

200 A

1

SILICON

1000 V

Not Qualified

GT8G103(2-7B5C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

8 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

2400 ns

3

IN-LINE

150 Cel

SILICON

400 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE

1400 ns

GT30J341

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

59 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

250 ns

GT35J321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

510 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

330 ns

GT15M321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

25 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

e0

300 ns

MG150Q1JS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1100 W

150 A

UNSPECIFIED

POWER CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

1100 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

GT40M301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

40 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

3.4 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

900 V

25 V

6 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

GT50J328

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

170 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

COLLECTOR

300 ns

GT50NR21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

450 ns

3

FLANGE MOUNT

SILICON

1050 V

SINGLE

R-PSFM-T3

200 ns

MG300N1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1400 W

300 A

PLASTIC/EPOXY

MOTOR CONTROL

5 V

UNSPECIFIED

RECTANGULAR

1

1300 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

1200 ns

MG150Q1JS9

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X7

Not Qualified

CHOPPER SWITCH

GT30J324(Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

240 ns

MG200Q1JS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1300 W

200 A

UNSPECIFIED

POWER CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

1300 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

GT10J321

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

29 W

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

170 ns

GT10G131

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.9 W

200 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2000 ns

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.2 V

DUAL

R-PDSO-G8

Not Qualified

3100 ns

GT50MR21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

FLANGE MOUNT

SILICON

900 V

SINGLE

R-PSFM-T3

220 ns

GT5G131

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

1800 ns

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G8

Not Qualified

e0

1400 ns

GT60N322

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

57 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

410 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

25 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

450 ns

GT10Q101

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

300 ns

GT60M302

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

60 A

PLASTIC/EPOXY

POWER CONTROL

600 ns

3.3 V

THROUGH-HOLE

RECTANGULAR

1

370 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

200 W

150 Cel

SILICON

900 V

25 V

6 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

350 ns

GT50J341,Q

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

450 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

270 ns

GT50J342

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

394 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

270 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.