SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MG200Q1ZS11

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1400 W

200 A

UNSPECIFIED

MOTOR CONTROL

600 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

1400 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

MG75J1ZS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-X5

Not Qualified

CHOPPER SWITCH

NOT SPECIFIED

NOT SPECIFIED

GT40J325

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

250 ns

MG360V1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3600 W

360 A

UNSPECIFIED

MOTOR CONTROL

4.5 V

UNSPECIFIED

RECTANGULAR

1

1500 ns

1000 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

3600 W

150 Cel

SILICON

1700 V

20 V

8 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

500 ns

GT10J303

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT15Q102

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

15 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

560 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

120 ns

MG200Q1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X4

Not Qualified

HIGH SPEED

GT5G103(2-7B6C)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

2400 ns

2

SMALL OUTLINE

150 Cel

SILICON

400 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOW SATURATION VOLTAGE

1100 ns

GT20J101

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

130 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

400 ns

GT30J121

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

e0

240 ns

MG100Q1ZS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

670 W

100 A

UNSPECIFIED

POWER CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

670 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

240

GT50JR22

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

180 ns

330 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

25 V

SINGLE

R-PSFM-T3

NOT SPECIFIED

NOT SPECIFIED

250 ns

GT10Q301

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

300 ns

MG75Q1JS40

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

560 W

75 A

UNSPECIFIED

POWER CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

560 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

GT10J311

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

2.7 V

GULL WING

RECTANGULAR

1

300 ns

500 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

80 W

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

HIGH SPEED

e0

400 ns

MG300N1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

300 A

1

SILICON

1000 V

Not Qualified

ST2000GXH32

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

17123 W

2000 A

UNSPECIFIED

MOTOR CONTROL

3.3 V

UNSPECIFIED

ROUND

1

13150 ns

4

DISK BUTTON

150 Cel

SILICON

4500 V

-40 Cel

20 V

UNSPECIFIED

O-XXDB-X4

HIGH RELIABILITY

810 ns

GT50J301(Q)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

50 A

UNSPECIFIED

MOTOR CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

300 ns

500 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

20 V

SINGLE

R-XSFM-T3

COLLECTOR

400 ns

MG400J1US42

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

600 V

Not Qualified

MG400J1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

3.5 V

UNSPECIFIED

RECTANGULAR

1

350 ns

4

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X4

Not Qualified

HIGH SPEED

MG400J1US2

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

600 V

Not Qualified

MG400J1US46

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

600 V

Not Qualified

MG400Q1US11

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X4

Not Qualified

MG400Q1US21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

MG400J1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

500 ns

4

FLANGE MOUNT

150 Cel

SILICON

600 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

400 ns

MG400J1US11

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

600 V

Not Qualified

MG400H1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

1000 ns

4

FLANGE MOUNT

SILICON

500 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

1100 ns

MG400N1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

1000 V

Not Qualified

MG400Q1US41

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2400 W

400 A

UNSPECIFIED

MOTOR CONTROL

600 ns

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

2400 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

MG400Q1US65H

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2600 W

400 A

UNSPECIFIED

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

600 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

100 ns

MG400Q1US51

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3000 W

520 A

UNSPECIFIED

MOTOR CONTROL

3.6 V

UNSPECIFIED

RECTANGULAR

1

300 ns

600 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

3000 W

150 Cel

SILICON

1200 V

20 V

6 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

200 ns

MG400N1US42

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

1000 V

Not Qualified

MG400J1US51

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1500 W

400 A

UNSPECIFIED

MOTOR CONTROL

300 ns

2.7 V

UNSPECIFIED

RECTANGULAR

1

300 ns

200 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

1500 W

150 Cel

SILICON

600 V

400 ns

20 V

400 ns

8 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH SPEED

NOT SPECIFIED

NOT SPECIFIED

200 ns

MG400Q1US1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X4

Not Qualified

HIGH SPEED

MG400Q1US42

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

4 V

UNSPECIFIED

RECTANGULAR

1

500 ns

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

HIGH SPEED

MG400Q1US2

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-PUFM-X5

Not Qualified

HIGH SPEED

MG400J1US21

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

400 A

1

SILICON

600 V

Not Qualified

MG400J1US45

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

1

1000 ns

4

FLANGE MOUNT

SILICON

600 V

UPPER

R-PUFM-X4

Not Qualified

RJH60D6DPM-00-T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

95 ns

CY25AAJ-8F

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

GULL WING

RECTANGULAR

1

8

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

6 V

1.5 V

DUAL

R-PDSO-G8

Not Qualified

RJH60F7ADPK-00#T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

328.9 W

90 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

217 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

84 ns

MBN400C33A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4000 W

400 A

UNSPECIFIED

POWER CONTROL

5.5 V

UNSPECIFIED

RECTANGULAR

1

3400 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

2300 ns

RJH60D0DPM-00#T1

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

45 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

6 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

55 ns

RJH1CD6DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

297.6 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

200 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

60 ns

RJH1CV6DPQ-E0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

297.6 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

245 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

79 ns

RJH30H1DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

360 V

30 V

5 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

100 ns

RJH1CF4RDPQ-80#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156.2 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

387 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

95 ns

RJH60F4DPQ-A0-T0

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235.8 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

165 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

195 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.