Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1400 W |
200 A |
UNSPECIFIED |
MOTOR CONTROL |
600 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
1400 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
75 A |
PLASTIC/EPOXY |
UNSPECIFIED |
RECTANGULAR |
1 |
5 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-PUFM-X5 |
Not Qualified |
CHOPPER SWITCH |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
500 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
250 ns |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
3600 W |
360 A |
UNSPECIFIED |
MOTOR CONTROL |
4.5 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1500 ns |
1000 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
3600 W |
150 Cel |
SILICON |
1700 V |
20 V |
8 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
HIGH SPEED |
500 ns |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
15 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
560 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
120 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
4 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X4 |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5 A |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
1 |
2400 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
400 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
LOW SATURATION VOLTAGE |
1100 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
130 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
170 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
430 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
240 ns |
|||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
670 W |
100 A |
UNSPECIFIED |
POWER CONTROL |
600 ns |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
670 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
240 |
||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
230 W |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
180 ns |
330 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
25 V |
SINGLE |
R-PSFM-T3 |
NOT SPECIFIED |
NOT SPECIFIED |
250 ns |
||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
140 W |
10 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
500 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
300 ns |
||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
560 W |
75 A |
UNSPECIFIED |
POWER CONTROL |
600 ns |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
7 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
560 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
80 W |
10 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
2.7 V |
GULL WING |
RECTANGULAR |
1 |
300 ns |
500 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
80 W |
150 Cel |
SILICON |
600 V |
20 V |
8 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
e0 |
400 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
300 A |
1 |
SILICON |
1000 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
17123 W |
2000 A |
UNSPECIFIED |
MOTOR CONTROL |
3.3 V |
UNSPECIFIED |
ROUND |
1 |
13150 ns |
4 |
DISK BUTTON |
150 Cel |
SILICON |
4500 V |
-40 Cel |
20 V |
UNSPECIFIED |
O-XXDB-X4 |
HIGH RELIABILITY |
810 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
50 A |
UNSPECIFIED |
MOTOR CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
300 ns |
500 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
20 V |
SINGLE |
R-XSFM-T3 |
COLLECTOR |
400 ns |
||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
400 A |
1 |
SILICON |
600 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 A |
PLASTIC/EPOXY |
POWER CONTROL |
3.5 V |
UNSPECIFIED |
RECTANGULAR |
1 |
350 ns |
4 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-X4 |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
400 A |
1 |
SILICON |
600 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
400 A |
1 |
SILICON |
600 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
4 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X4 |
Not Qualified |
|||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
5 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X5 |
Not Qualified |
|||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
4 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
400 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
400 A |
1 |
SILICON |
600 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
4 |
FLANGE MOUNT |
SILICON |
500 V |
UPPER |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
HIGH SPEED |
1100 ns |
|||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
400 A |
1 |
SILICON |
1000 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
2400 W |
400 A |
UNSPECIFIED |
MOTOR CONTROL |
600 ns |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
2400 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
2600 W |
400 A |
UNSPECIFIED |
POWER CONTROL |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
600 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
100 ns |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
3000 W |
520 A |
UNSPECIFIED |
MOTOR CONTROL |
3.6 V |
UNSPECIFIED |
RECTANGULAR |
1 |
300 ns |
600 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
3000 W |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
|||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
400 A |
1 |
SILICON |
1000 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1500 W |
400 A |
UNSPECIFIED |
MOTOR CONTROL |
300 ns |
2.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
300 ns |
200 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
1500 W |
150 Cel |
SILICON |
600 V |
400 ns |
20 V |
400 ns |
8 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
HIGH SPEED |
NOT SPECIFIED |
NOT SPECIFIED |
200 ns |
||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
4 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X4 |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 A |
PLASTIC/EPOXY |
POWER CONTROL |
4 V |
UNSPECIFIED |
RECTANGULAR |
1 |
500 ns |
5 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X5 |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 A |
PLASTIC/EPOXY |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
5 |
FLANGE MOUNT |
SILICON |
1200 V |
UPPER |
R-PUFM-X5 |
Not Qualified |
HIGH SPEED |
||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
400 A |
1 |
SILICON |
600 V |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
400 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.5 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1000 ns |
4 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-PUFM-X4 |
Not Qualified |
|||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
95 ns |
|||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
GENERAL PURPOSE SWITCHING |
GULL WING |
RECTANGULAR |
1 |
8 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
400 V |
6 V |
1.5 V |
DUAL |
R-PDSO-G8 |
Not Qualified |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
328.9 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
217 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
84 ns |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
4000 W |
400 A |
UNSPECIFIED |
POWER CONTROL |
5.5 V |
UNSPECIFIED |
RECTANGULAR |
1 |
3400 ns |
4 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
125 Cel |
SILICON |
3300 V |
20 V |
UPPER |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, LOW NOISE |
2300 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 W |
45 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
6 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
297.6 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
60 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
297.6 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
245 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
79 ns |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
20 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
190 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
360 V |
30 V |
5 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
100 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
156.2 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
387 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
30 V |
7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
95 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
235.8 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
165 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
30 V |
8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
195 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.