SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SGP02N120HKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6.2 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

375 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

40 ns

FF1500R12IE5P

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1500 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

2

720 ns

14

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.35 V

UPPER

R-PUFM-X14

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

460 ns

IRG4PSC71KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

517 ns

3

IN-LINE

SILICON

600 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-274AA

e3

30

250

191 ns

IRG4BC20SD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

19 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1780 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

99 ns

IKW20N60TXK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

299 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

36 ns

IRG4PC50UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

71 ns

IRGP6660D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

95 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

100 ns

IRGP4650D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

76 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

188 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

78 ns

IRGP30B60KD-EP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

304 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

39 ns

THROUGH-HOLE

RECTANGULAR

1

42 ns

237 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

74 ns

FD400R33KF2CNOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4800 W

660 A

UNSPECIFIED

POWER CONTROL

4.25 V

UNSPECIFIED

RECTANGULAR

1

1900 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

3300 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

480 ns

IRGB4064DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

101 W

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

131 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

43 ns

IRG4PH40UD2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

820 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

54 ns

IHW20N120R3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

310 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

538 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.4 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IRG4PH40UD2-EPPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

46 ns

IKD06N60R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

335 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-252

e3

22 ns

IRGP20B120UD-EP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

40 A

PLASTIC/EPOXY

POWER CONTROL

30 ns

THROUGH-HOLE

RECTANGULAR

1

35 ns

228 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-247AD

e3

70 ns

IGW20N60H3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

241 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

37 ns

IKB06N60TXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

249 ns

3

SMALL OUTLINE

175 Cel

SILICON

600 V

SINGLE

R-PSSO-G3

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

17 ns

SKB02N120

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42 W

6.2 A

PLASTIC/EPOXY

POWER CONTROL

12 ns

GULL WING

RECTANGULAR

1

96 ns

375 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

5 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

40 ns

IKW25T120

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

790 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-247AC

e3

82 ns

IRGBC20SD2-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

19 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

1100 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AD

e3

78 ns

IRGP6640D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

53 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

50 ns

IRG4BC20KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

16 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

380 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

88 ns

IRG4RC10SD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1780 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e0

30

240

106 ns

IRG4BC30KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

370 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

100 ns

SKB06N60ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

41 ns

IRG7RC10FDTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

16.5 A

PLASTIC/EPOXY

POWER CONTROL

49 ns

1.85 V

GULL WING

RECTANGULAR

1

26 ns

250 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

104 ns

-55 Cel

30 V

351 ns

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

70 ns

IKB10N60TXT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

296 ns

3

SMALL OUTLINE

175 Cel

SILICON

600 V

SINGLE

R-PSSO-G3

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

21 ns

IKW50N65H5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

231 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

35 ns

IRG41BC20KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

11.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

3

FLANGE MOUNT

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

ULTRAFAST, HIGH SPEED

e3

54 ns

FD300R12KS4HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

370 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

590 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

180 ns

UL APPROVED

IRGP35B60PD-EP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

308 W

60 A

PLASTIC/EPOXY

POWER CONTROL

11 ns

THROUGH-HOLE

RECTANGULAR

1

16 ns

142 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

34 ns

IRG4PC50FD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

660 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

86 ns

BSM100GAL120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

470 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

210 ns

IKW15N120T2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

626 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

61 ns

IKB15N60TATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

291 ns

3

SMALL OUTLINE

175 Cel

SILICON

600 V

TIN

SINGLE

R-PSSO-G3

1

COLLECTOR

Not Qualified

HIGH SWITCHING SPEED

TO-263AB

e3

32 ns

IRG4PSC71UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

503 ns

3

IN-LINE

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

179 ns

IRG4BC15UD-S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

400 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

225

37 ns

IKFW75N60ET

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

417 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

79 ns

IKB15N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

130 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

291 ns

3

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSSO-G3

1

COLLECTOR

Not Qualified

HIGH SWITCHING SPEED

TO-263AB

245

32 ns

SKB06N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

12 A

PLASTIC/EPOXY

POWER CONTROL

22 ns

GULL WING

RECTANGULAR

1

84 ns

318 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-263AB

245

41 ns

IRG4BC15UD-L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

14 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

IN-LINE

SILICON

600 V

TIN LEAD

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262

e0

37 ns

IRG7RC10FDTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

16.5 A

PLASTIC/EPOXY

POWER CONTROL

49 ns

1.85 V

GULL WING

RECTANGULAR

1

26 ns

250 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

104 ns

-55 Cel

30 V

351 ns

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-252AA

70 ns

IRGP6640DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

53 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

50 ns

IRGP4062D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

164 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

64 ns

SKB06N60XT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

318 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

41 ns

IHW20N135R3XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

385 ns

3

FLANGE MOUNT

SILICON

1350 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

505 ns

IRG4BC30FD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

620 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

69 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.