SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IRGP4740DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

45 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

40 ns

96 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

85 ns

-40 Cel

20 V

130 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

51 ns

SKB04N60-E-3045A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

9.4 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

368 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

38 ns

IRGB15B60KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

25 ns

THROUGH-HOLE

RECTANGULAR

1

36 ns

231 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRA FAST

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

52 ns

IRGBC20KD2-STRL

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

170 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

SHORT CIRCUIT RATED

NOT SPECIFIED

NOT SPECIFIED

52 ns

BSM75GAL120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

520 ns

7

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

100 ns

IRGP4690DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

120 ns

IKW50N65H5A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

184 ns

3

FLANGE MOUNT

SILICON

650 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

33 ns

AEC-Q101

IRG4BC20FDSTRLP

Infineon Technologies

N-Channel

SINGLE WITH BUILT-IN DIODE

YES

60 W

16 A

PLASTIC/EPOXY

2 V

GULL WING

RECTANGULAR

1

220 ns

390 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

580 ns

6 V

SINGLE

R-PSSO-G2

COLLECTOR

63 ns

IKFW60N60EH3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

164 W

64 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

282 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

63 ns

IKD04N60RFA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

8 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

216 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

18 ns

AEC-Q101

IHW15N120R2FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

432 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

AUIRGP66524D0

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

214 W

60 A

PLASTIC/EPOXY

POWER CONTROL

45 ns

1.9 V

THROUGH-HOLE

RECTANGULAR

1

45 ns

100 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

95 ns

-55 Cel

20 V

140 ns

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

55 ns

AEC-Q101

IRG4PH40UD2-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

41 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

46 ns

IRGP4055DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

110 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

671 ns

3

FLANGE MOUNT

150 Cel

SILICON

300 V

-40 Cel

30 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

82 ns

IKFW50N60DH3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

145 W

53 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

268 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

58 ns

IKQ100N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

IRG4IBC30UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

17 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

300 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

62 ns

IRGP20B120UD-E

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

228 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

Not Qualified

ULTRA FAST

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

70 ns

IRGP4760DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

325 W

90 A

PLASTIC/EPOXY

POWER CONTROL

80 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

50 ns

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

170 ns

-40 Cel

20 V

210 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

130 ns

IRG4BC30KD-S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

370 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

e0

30

225

100 ns

AUIRGP35B60PD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

308 W

60 A

PLASTIC/EPOXY

POWER CONTROL

11 ns

THROUGH-HOLE

RECTANGULAR

1

16 ns

142 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

SINGLE

R-PSFM-T3

COLLECTOR

HIGHER RELIABILITY

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

34 ns

IKA15N65H5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

33.3 W

14 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

24 ns

IRG4RC10SDTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

14 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1080 ns

1780 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-252AA

e3

30

260

106 ns

IKB06N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

12 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

249 ns

3

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G3

1

COLLECTOR

Not Qualified

TO-263AB

e3

245

17 ns

IRG4BC30FD1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

740 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

46 ns

BSM150GAL120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

210 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

670 ns

7

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X7

ISOLATED

300 ns

IRG4PSH71UD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

99 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

810 ns

3

IN-LINE

SILICON

1200 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

ULTRA FAST SWITCHING

TO-274AA

NOT SPECIFIED

NOT SPECIFIED

121 ns

IRGP20B60PD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

138 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH RELIABILITY, LOW CONDUCTION LOSS

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

25 ns

IRG4BC15UD-LPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

19 W

14 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

400 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262

e3

30

260

37 ns

IRGP4760D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

325 W

90 A

PLASTIC/EPOXY

POWER CONTROL

80 ns

2 V

THROUGH-HOLE

RECTANGULAR

1

50 ns

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

170 ns

-40 Cel

20 V

210 ns

7.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

130 ns

IKFW75N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

148 W

80 A

PLASTIC/EPOXY

2.1 V

THROUGH-HOLE

RECTANGULAR

1

248 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

Tin (Sn)

SINGLE

R-PSFM-T3

ISOLATED

TO-247

e3

65 ns

IRG4PC40KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

42 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

150 ns

360 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

e3

89 ns

IRGB6B60KDTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

45 ns

IRGPH20KD2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

1200 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST

TO-247AC

e3

IHW15N120R3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

254 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

260

IRG7PH35UD1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

179 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

105 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

IKD06N60RFA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

149 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

17 ns

AEC-Q101

IKW50N65F5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

205 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

35 ns

BSM100GAR120DN2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

800 W

100 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

470 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

IKP20N60TAHKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

287 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

35 ns

AEC-Q101

FD300R06KE3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

940 W

400 A

UNSPECIFIED

1.9 V

UNSPECIFIED

RECTANGULAR

1

600 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

AUIRGP4066D1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

140 A

PLASTIC/EPOXY

POWER CONTROL

100 ns

THROUGH-HOLE

RECTANGULAR

1

80 ns

320 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

115 ns

IRG7PH35UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

50 A

PLASTIC/EPOXY

POWER CONTROL

30 ns

THROUGH-HOLE

RECTANGULAR

1

105 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

30 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

45 ns

IRGBC20KD2-STRR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

10 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

170 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

SHORT CIRCUIT RATED

NOT SPECIFIED

NOT SPECIFIED

52 ns

IRGP4630D-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

206 W

47 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

65 ns

IKW50N120CS7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

82 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

270 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.45 V

SINGLE

R-PSFM-T3

TO-247

48 ns

IRG4PC30FDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

620 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

MATTE TIN OVER NICKEL

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING, ULTRA FAST SOFT RECOVERY

TO-247AC

e3

69 ns

IKQ120N60TAXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

833 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

398 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

84 ns

AEC-Q101

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.