Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
160 W |
40 A |
PLASTIC/EPOXY |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
120 ns |
190 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
285 ns |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
111 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
178 W |
36 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
235 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
30 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
33.3 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
166 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
24 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
138 W |
27 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
252 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
245 |
27 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
68 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
22 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
84 ns |
318 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
41 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
395 W |
90 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
215 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
61 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 W |
9.4 A |
PLASTIC/EPOXY |
POWER CONTROL |
19 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
125 ns |
368 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
38 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
104 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
25 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
76 ns |
224 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
250 W |
41 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
301 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
27 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
252 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-263AB |
27 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
41 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
391 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
-55 Cel |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
78 ns |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
315 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
54 ns |
|||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
315 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
54 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
100 W |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
130 ns |
171 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
270 ns |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
61 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 W |
60 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
35 ns |
4 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
75 ns |
270 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
100 ns |
-55 Cel |
20 V |
305 ns |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
75 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
6 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
354 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
34 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
313 W |
46 A |
PLASTIC/EPOXY |
POWER CONTROL |
24 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
26 ns |
862 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
86 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
139 W |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
28 ns |
GULL WING |
RECTANGULAR |
1 |
65 ns |
315 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
245 |
54 ns |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
42 W |
6.2 A |
PLASTIC/EPOXY |
POWER CONTROL |
12 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
96 ns |
375 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
40 ns |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
55 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
110 ns |
214 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
340 ns |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
71 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
9.4 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
368 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
38 ns |
||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
104 W |
21 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
25 ns |
GULL WING |
RECTANGULAR |
1 |
76 ns |
329 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-263AB |
e0 |
50 ns |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
315 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
54 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
9.4 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
368 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
38 ns |
||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
9 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
318 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
41 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
315 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-263AB |
54 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
139 W |
31 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
28 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
65 ns |
315 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
54 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
27 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
252 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
27 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
395 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.75 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
185 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
86 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
52 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
140 ns |
245 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
360 ns |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
112 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
104 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
25 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
76 ns |
224 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
e3 |
40 ns |
||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
315 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
54 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
200 W |
53 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
279 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
38 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
50 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
504 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
49 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
255 W |
74 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
176 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
32 ns |
|||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
315 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-220AB |
54 ns |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
105 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
166 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
24 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
198 W |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
24 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
26 ns |
683 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
68 ns |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
683 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AC |
68 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
315 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
54 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
92 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
32 ns |
224 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
40 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
104 W |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
25 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
76 ns |
224 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-247AC |
40 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
315 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-263AB |
e3 |
54 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
178 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
313 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
NOT APPLICABLE |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
66 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
230 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.8 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
448 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
60 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
224 ns |
2 |
SMALL OUTLINE |
150 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-263AB |
40 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
125 W |
16.5 A |
PLASTIC/EPOXY |
POWER CONTROL |
24 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
61 ns |
520 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
5 V |
SINGLE |
R-PSFM-T3 |
NOT APPLICABLE |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
56 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
318 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-220AB |
e3 |
41 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.