SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IHW30N120R2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

390 W

60 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

900 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

6.4 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

IKU15N60RBKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

IN-LINE

175 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

Not Qualified

TO-251

NOT SPECIFIED

NOT SPECIFIED

26 ns

IRG8P25N120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

180 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

585 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

40 ns

IHW30N135R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

THROUGH-HOLE

RECTANGULAR

1

680 ns

3

FLANGE MOUNT

175 Cel

SILICON

1350 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

FZ200R65KF2NOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1000 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

6500 ns

5

FLANGE MOUNT

150 Cel

SILICON

6300 V

UPPER

R-XUFM-X5

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

IGC04R60D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

UPPER

R-XUUC-N2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IKA08N65F5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31.2 W

10.8 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

163 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

15 ns

IRGMIC50U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 A

METAL

GENERAL PURPOSE SWITCHING

PIN/PEG

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-259AA

40

260

51 ns

FD800R17HP4-K_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

5350 W

800 A

UNSPECIFIED

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

1

2000 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

1

ISOLATED

670 ns

FD600R16KF4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 A

UNSPECIFIED

3.5 V

UNSPECIFIED

RECTANGULAR

1

1250 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1600 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

800 ns

AIKW50N65DH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

AEC-Q101

IHY15N120R3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

IKZ75N65EL5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

100 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

474 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

5.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

133 ns

FD250R65KE3-K

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

8100 ns

7

FLANGE MOUNT

SILICON

6500 V

UPPER

R-PUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

1200 ns

UL APPROVED

IKB20N60H3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

170 W

40 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

241 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

260

31 ns

FD600R17KF6C_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

4800 W

975 A

UNSPECIFIED

POWER CONTROL

3.1 V

UNSPECIFIED

RECTANGULAR

1

1220 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

470 ns

FD800R45KL3-K_B5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

800 A

PLASTIC/EPOXY

POWER CONTROL

2.85 V

UNSPECIFIED

RECTANGULAR

1

7350 ns

9

FLANGE MOUNT

125 Cel

SILICON

4500 V

-50 Cel

20 V

6.6 V

UPPER

R-PUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

820 ns

IKWH60N65WR6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

100 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

334 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

63 ns

IKU10N60RBKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

428 ns

3

IN-LINE

175 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

TO-251

NOT SPECIFIED

NOT SPECIFIED

24 ns

IRGS4062DTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

48 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

GULL WING

RECTANGULAR

1

41 ns

164 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

64 ns

OM6508SA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

5 A

METAL

POWER CONTROL

PIN/PEG

SQUARE

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

187 ns

BUP313D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

32 A

PLASTIC/EPOXY

MOTOR CONTROL

70 ns

THROUGH-HOLE

RECTANGULAR

1

95 ns

400 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED

TO-218

e3

70 ns

FD200R65KF2-K

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3800 W

1000 A

UNSPECIFIED

POWER CONTROL

4.9 V

UNSPECIFIED

RECTANGULAR

1

6500 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

6300 V

20 V

UPPER

R-XUFM-X7

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1120 ns

BSM400GA120DLCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

625 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IKWH30N65WR6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.75 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

53 ns

IRGS15B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

231 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

e0

30

225

52 ns

RGR3B60KD2TRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

7.8 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

211 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

TO-252AA

e3

35 ns

IHW40T60XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

272.5 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

AIHD10N60R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

428 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

24 ns

AEC-Q101

IHW30N100T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

412 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

130 ns

702 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1000 V

20 V

6.4 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

90 ns

IKP15N60THKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

291 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

HIGH SPEED

TO-220AB

32 ns

FZ600R17KE3_S4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

840 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1200 ns

5

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

400 ns

UL RECOGNIZED

IRGS4715DTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

21 A

PLASTIC/EPOXY

POWER CONTROL

30 ns

2 V

GULL WING

RECTANGULAR

1

30 ns

120 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

80 ns

-40 Cel

30 V

150 ns

7.4 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

50 ns

BSM300GA120DLCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2270 W

570 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

OM400L60CMC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

1150 ns

7

FLANGE MOUNT

SILICON

600 V

TIN LEAD

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e0

1200 ns

AIHD06N60R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

12 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

335 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

22 ns

AEC-Q101

IKZ50N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

273 W

85 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

311 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

27 ns

IHY30N160R2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

675 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1600 V

20 V

6.4 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

260

IRGSL6B60KDTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

IN-LINE

150 Cel

SILICON

600 V

SINGLE

R-PSIP-T3

COLLECTOR

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

45 ns

BSM200GA170DLCHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

930 ns

5

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

200 ns

IKB30N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

188 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

200 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

52 ns

ILA03N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

16.5 W

3 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

3.9 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

65 ns

IRG8P15N120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

580 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

35 ns

IHW40N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

305 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

228 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IHP10T120

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

138 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

769 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

69 ns

IKA06N60TXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

10 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

249 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

HIGH SPEED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

17 ns

IRGS4630DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

206 W

47 A

PLASTIC/EPOXY

POWER CONTROL

1.95 V

GULL WING

RECTANGULAR

1

160 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

65 ns

IRGSL4B60KD1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

63 W

11 A

PLASTIC/EPOXY

MOTOR CONTROL

23 ns

THROUGH-HOLE

RECTANGULAR

1

89 ns

199 ns

3

IN-LINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

TO-262

e3

30

260

40 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.