SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

BSM400GA120DN2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2700 W

550 A

UNSPECIFIED

3.2 V

UNSPECIFIED

RECTANGULAR

1

630 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

210 ns

AIHD15N60R

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

260

26 ns

AEC-Q101

IRG8P50N120KD-EPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

410 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AD

55 ns

IGC04R60DEX1SA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

-40 Cel

UPPER

R-XUUC-N2

LOW CONDUCTION LOSS

ILP03N60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

27 W

4.5 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

240 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

30 V

3.9 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

65 ns

OM6509SA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

10 A

METAL

POWER CONTROL

1000 ns

PIN/PEG

SQUARE

1

1500 ns

700 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

150 ns

IGW60N60H3FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

314 ns

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

64 ns

OM6520SC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

25 A

METAL

POWER CONTROL

PIN/PEG

RECTANGULAR

1

500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

6.5 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH SPEED

TO-258AA

e0

250 ns

BSM200GA120DLCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1470 W

370 A

UNSPECIFIED

POWER CONTROL

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IRGS4064DTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

101 W

20 A

PLASTIC/EPOXY

23 ns

1.91 V

GULL WING

RECTANGULAR

1

29 ns

100 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

119 ns

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

42 ns

IRGSL6B60KDTRR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

13 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

IN-LINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

TO-262AA

e3

45 ns

FD1200R17HP4-K_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6500 W

PLASTIC/EPOXY

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

1

1800 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

900 ns

UL APPROVED

IKP30N65F5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

188 W

55 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

206 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

28 ns

IKY75N120CS6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

880 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

331 ns

4

IN-LINE

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

TIN

SINGLE

R-PSIP-T4

e3

64 ns

FZ400R12KE3B1HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

650 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

IRGIB10B60KD1P

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

44 W

16 A

PLASTIC/EPOXY

MOTOR CONTROL

34 ns

THROUGH-HOLE

RECTANGULAR

1

87 ns

288 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.5 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

46 ns

IHW40N120R3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

429 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.75 V

THROUGH-HOLE

RECTANGULAR

1

506 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

DF150R12RT4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

790 W

150 A

UNSPECIFIED

POWER CONTROL

2.15 V

UNSPECIFIED

RECTANGULAR

1

490 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

1

ISOLATED

Not Qualified

260

185 ns

IRGMIC50UU

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 W

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

5.5 V

TIN LEAD

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

ULTRA FAST

TO-259AA

e0

AIKQ100N60CTXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

714 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

393 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

83 ns

AEC-Q101

IKB40N65ES5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

79 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

GULL WING

RECTANGULAR

1

204 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

36 ns

AIKW50N60CT

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

60 ns

AEC-Q101

AIKW50N65DF5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

270 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

35 ns

AEC-Q101

IHW30N65R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

176 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

258 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

44 ns

IHW50N65R5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

261 ns

3

FLANGE MOUNT

SILICON

650 V

-40 Cel

TIN

SINGLE

R-PSFM-T3

TO-247

e3

51 ns

BSM200GAL120DLC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1300 W

420 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

MATTE TIN

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

e3

190 ns

IKP06N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

88 W

12 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

249 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

17 ns

IRGS4607DTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

95 ns

2

SMALL OUTLINE

SILICON

600 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

51 ns

FD800R17KF6CB2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6250 W

1300 A

UNSPECIFIED

3.1 V

UNSPECIFIED

RECTANGULAR

1

1240 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

Matte Tin (Sn)

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

e3

540 ns

IKD10N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

186 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

27 ns

OM6509CSA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

42 W

10 A

METAL

POWER CONTROL

1000 ns

PIN/PEG

SQUARE

1

1500 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

500 V

4 V

TIN LEAD

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-254AA

e0

IGC03R60DEX1SA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

-40 Cel

UPPER

R-XUUC-N2

LOW CONDUCTION LOSS

IKW03N120H2XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

16.1 ns

IKP01N120H2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

28 W

3.2 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

493 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

3.9 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

20.9 ns

BSM600GA120DLCSHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

900 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

190 ns

UL APPROVED

IRGIB7B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

43 ns

IRGS4640DTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

65 A

PLASTIC/EPOXY

POWER CONTROL

31 ns

1.9 V

GULL WING

RECTANGULAR

1

41 ns

164 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

84 ns

-55 Cel

20 V

156 ns

6.5 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

64 ns

IKB40N65EF5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

197 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

55 ns

IKP15N65F5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

30 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

195 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

26 ns

FZ600R17KE3HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

840 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1200 ns

3

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

IGC05R60DX1SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

175 Cel

SILICON

600 V

UPPER

R-XUUC-N2

Not Qualified

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

IRGS4B60KD1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

199 ns

2

SMALL OUTLINE

SILICON

600 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST SOFT RECOVERY

e0

30

225

40 ns

FZ400R17KE3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2270 W

780 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

1

1230 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X4

1

ISOLATED

Not Qualified

260

400 ns

IHW40T60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

303 W

80 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

272.5 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

IGC05R60DEX1SA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

POWER CONTROL

NO LEAD

RECTANGULAR

1

2

UNCASED CHIP

SILICON

600 V

-40 Cel

UPPER

R-XUUC-N2

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

IRGS15B60KDTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

231 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

e3

52 ns

IKY40N120CH3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

439 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

61 ns

BSM200GA100D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

200 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

Insulated Gate BIP Transistors

SILICON

1000 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.