SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

IKZ50N65NH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

273 W

85 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

313 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

30 ns

BSM300GA100D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 A

PLASTIC/EPOXY

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

Insulated Gate BIP Transistors

SILICON

1000 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

220 ns

IHY30N160R2XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

675 ns

3

FLANGE MOUNT

175 Cel

SILICON

1600 V

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

260

IHW30N90TFKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

691 ns

3

FLANGE MOUNT

175 Cel

SILICON

900 V

SINGLE

R-PSFM-T3

NOT APPLICABLE

COLLECTOR

Not Qualified

HIGH SPEED

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

82 ns

AIHD03N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53.6 W

6.5 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

265 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

18 ns

AEC-Q101

AIKW40N65DH5XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

166 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

299 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

36 ns

AEC-Q101

IRGS6B60KDTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

13 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

258 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

45 ns

IKQ50N120CH3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

652 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.35 V

THROUGH-HOLE

RECTANGULAR

1

466 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

68 ns

IRG8P50N120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

350 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

410 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

30 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

55 ns

FZ400R12KE3HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

650 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

830 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

400 ns

BSM400GA170DLCHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

800 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

930 ns

5

FLANGE MOUNT

150 Cel

SILICON

1700 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

200 ns

BSM300GA120DLC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2270 W

570 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IKWH50N65WR6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

205 W

85 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

375 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

TO-247

67 ns

IRGS15B60KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

31 A

PLASTIC/EPOXY

MOTOR CONTROL

25 ns

GULL WING

RECTANGULAR

1

36 ns

231 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

ULTRA FAST

e3

30

260

52 ns

IRGS4064DTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

101 W

20 A

PLASTIC/EPOXY

23 ns

1.91 V

GULL WING

RECTANGULAR

1

29 ns

100 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

60 ns

-55 Cel

20 V

119 ns

6.5 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

42 ns

IRGSL10B60KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

22 A

PLASTIC/EPOXY

MOTOR CONTROL

28 ns

THROUGH-HOLE

RECTANGULAR

1

34 ns

276 ns

3

IN-LINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.5 V

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262

e3

40

260

50 ns

OM300F120CMS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

880 ns

4

FLANGE MOUNT

SILICON

1200 V

TIN LEAD

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

e0

400 ns

BSM400GA120DLC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

625 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IHW30N120R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

520 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

IKD15N60RBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

30 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

SINGLE

R-PSSO-G2

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

26 ns

IHW30N160R5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

411 ns

3

FLANGE MOUNT

175 Cel

SILICON

1600 V

-40 Cel

20 V

5.8 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

BSM300GA120DLCHOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

570 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

190 ns

IKD15N60RA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

30 A

PLASTIC/EPOXY

2.1 V

GULL WING

RECTANGULAR

1

430 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-252

e3

26 ns

AEC-Q101

BSM200GA120DN2HOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

550 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

630 ns

5

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

FZ400R12KE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2400 W

400 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

810 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X3

1

ISOLATED

Not Qualified

260

370 ns

BUP311D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

460 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-218AB

e3

105 ns

BSM300GAR120DLC

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2500 W

625 A

UNSPECIFIED

2.6 V

UNSPECIFIED

RECTANGULAR

1

650 ns

5

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

190 ns

IRGSL15B60KD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

231 ns

3

IN-LINE

SILICON

600 V

TIN LEAD

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

ULTRA FAST

TO-262

e0

52 ns

FD1200R17KE3-K_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6600 W

1700 A

UNSPECIFIED

2.45 V

UNSPECIFIED

RECTANGULAR

1

2100 ns

7

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X7

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1050 ns

FD600R17KE3-K_B5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

950 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1900 ns

7

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

900 ns

IRGS6B60KDTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

13 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

258 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

45 ns

RGR3B60KD2TR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

7.8 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

211 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN OVER NICKEL

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

35 ns

IHP10T120XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

16 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

769 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

69 ns

IRG8P60N120KDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

420 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

420 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

70 ns

IHW30N160R2XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

675 ns

3

FLANGE MOUNT

175 Cel

SILICON

1600 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

IRGS4B60KD1TRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

11 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

199 ns

2

SMALL OUTLINE

SILICON

600 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

40 ns

IRGMIC50UPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 A

METAL

PIN/PEG

RECTANGULAR

1

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-MSFM-P3

ISOLATED

ULTRA FAST

TO-259AA

NOT SPECIFIED

NOT SPECIFIED

51 ns

IRGS4715DTRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

21 A

PLASTIC/EPOXY

POWER CONTROL

30 ns

2 V

GULL WING

RECTANGULAR

1

30 ns

120 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

80 ns

-40 Cel

30 V

150 ns

7.4 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

50 ns

BSM400GA120DN2S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

2700 W

550 A

UNSPECIFIED

POWER CONTROL

3 V

UNSPECIFIED

RECTANGULAR

1

630 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

210 ns

AIHD03N60RFATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53.6 W

6.5 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

GULL WING

RECTANGULAR

1

265 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

18 ns

AEC-Q101

AIHD10N60RATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

20 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

428 ns

2

SMALL OUTLINE

175 Cel

SILICON

600 V

-40 Cel

20 V

5.7 V

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

24 ns

AEC-Q101

IRGMIC50UDPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 A

METAL

PIN/PEG

RECTANGULAR

1

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-MSFM-P3

ISOLATED

ULTRA FAST

TO-259AA

NOT SPECIFIED

NOT SPECIFIED

IHW40N60T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

303 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

272.5 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.7 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

IHW30N120R3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

349 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.75 V

THROUGH-HOLE

RECTANGULAR

1

484 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

IKZ75N65EH5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

395 W

90 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

415 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

TIN

SINGLE

R-PSFM-T4

COLLECTOR

TO-247

e3

37 ns

IKP40N65H5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

74 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

217 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

4.8 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

32 ns

IHW40T120XK

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AC

92 ns

Q67040-S4594

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

9.6 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

403 ns

3

FLANGE MOUNT

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

16.1 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.