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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IKB30N65EH5 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 188 W; Maximum Collector Current (IC): 55 A; Package Shape: RECTANGULAR; |
| Datasheet | IKB30N65EH5 Datasheet |
| In Stock | 450 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 55 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 4.8 V |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| Nominal Turn Off Time (toff): | 200 ns |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 188 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 52 ns |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | COLLECTOR |
| Moisture Sensitivity Level (MSL): | 1 |
| JEDEC-95 Code: | TO-263AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -40 Cel |
| Maximum Collector-Emitter Voltage: | 650 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 2.1 V |
