Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
14.7 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
291 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
HIGH SWITCHING SPEED |
TO-220AB |
e3 |
32 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
176 W |
36 A |
PLASTIC/EPOXY |
POWER CONTROL |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
270 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.45 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
34 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
62.5 W |
9.6 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
403 ns |
3 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
3.9 V |
TIN |
SINGLE |
R-PSSO-G3 |
1 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-220AB |
e3 |
220 |
16.1 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
52 W |
7.8 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
22 ns |
GULL WING |
RECTANGULAR |
1 |
105 ns |
211 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
TO-252AA |
e3 |
35 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
52 W |
7.8 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
22 ns |
GULL WING |
RECTANGULAR |
1 |
105 ns |
211 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
5.5 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
TO-252AA |
e3 |
35 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
28 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
100 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
77 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
GULL WING |
RECTANGULAR |
1 |
22 ns |
127 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
Matte Tin (Sn) - with Nickel (Ni) barrier |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
TO-252AA |
e3 |
30 |
260 |
38 ns |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
14.3 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
610 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
63 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
106 W |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
154 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-247 |
e3 |
29 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
51 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
460 ns |
3 |
FLANGE MOUNT |
150 Cel |
SILICON |
900 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
121 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
11.5 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
380 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
88 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
200 ns |
3 |
FLANGE MOUNT |
SILICON |
650 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
34 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
16 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
110 ns |
380 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
e3 |
30 |
260 |
88 ns |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
18 W |
17 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
130 ns |
300 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
-55 Cel |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
62 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
30 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
291 ns |
3 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G3 |
COLLECTOR |
HIGH SWITCHING SPEED |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
32 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
32.5 W |
25 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.9 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
195 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
6.4 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
45 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
99 W |
16 A |
PLASTIC/EPOXY |
POWER CONTROL |
21 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
26 ns |
152 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
61 W |
16.5 A |
PLASTIC/EPOXY |
POWER CONTROL |
49 ns |
1.85 V |
GULL WING |
RECTANGULAR |
1 |
26 ns |
250 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
104 ns |
-55 Cel |
30 V |
351 ns |
7 V |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252AA |
70 ns |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
500 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.15 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
445 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.3 V |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
65 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
241 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
37 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
16 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
GULL WING |
RECTANGULAR |
1 |
380 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
88 ns |
|||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
268 W |
76 A |
PLASTIC/EPOXY |
POWER CONTROL |
42 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
54 ns |
188 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
78 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
206 W |
47 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.95 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
160 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
65 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
196 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
35 ns |
AEC-Q101 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
89 W |
12 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
27 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
29 ns |
132 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
6 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
39 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
8 A |
PLASTIC/EPOXY |
2.1 V |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
LOW CONDUCTION LOSS |
TO-252 |
e3 |
AEC-Q101 |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
23 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
370 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
SHORT CIRCUIT RATED |
TO-247AD |
e0 |
164 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
306 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.95 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
180 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
70 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
166 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
299 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
36 ns |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
625 W |
62 A |
PLASTIC/EPOXY |
POWER CONTROL |
29 ns |
2.2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
32 ns |
157 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
82 ns |
-55 Cel |
20 V |
195 ns |
5.5 V |
SINGLE |
R-PSFM-T3 |
TO-247AC |
NOT SPECIFIED |
NOT SPECIFIED |
47 ns |
AEC-Q101 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
77 W |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
15 ns |
THROUGH-HOLE |
RECTANGULAR |
1 |
22 ns |
127 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
38 ns |
|||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
299 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
36 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
830 W |
205 A |
UNSPECIFIED |
POWER CONTROL |
2.6 V |
UNSPECIFIED |
RECTANGULAR |
1 |
480 ns |
5 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
110 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
11 A |
PLASTIC/EPOXY |
MOTOR CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
730 ns |
3 |
FLANGE MOUNT |
SILICON |
1200 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
TO-247AD |
e3 |
80 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
483 W |
140 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.95 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
305 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
6.5 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
159 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
67 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
320 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
-40 Cel |
TIN |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
49 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
38 W |
14 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
1080 ns |
1780 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
6 V |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
LOW CONDUCTION LOSS |
e3 |
106 ns |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
60 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
382 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
50 ns |
AEC-Q101 |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
130 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
220 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
600 V |
-40 Cel |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-247 |
e3 |
58 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
166 W |
40 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
299 ns |
3 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
600 V |
20 V |
5.7 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247AC |
e3 |
36 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
20 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
296 ns |
3 |
SMALL OUTLINE |
175 Cel |
SILICON |
600 V |
SINGLE |
R-PSSO-G3 |
1 |
COLLECTOR |
Not Qualified |
TO-263AB |
21 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
148 W |
80 A |
PLASTIC/EPOXY |
POWER CONTROL |
1.7 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
193 ns |
3 |
FLANGE MOUNT |
175 Cel |
SILICON |
650 V |
-40 Cel |
20 V |
4.8 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-247 |
e3 |
56 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
11.7 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
296 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
HIGH SWITCHING SPEED |
TO-220AB |
e3 |
21 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
28 W |
3.2 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
493 ns |
2 |
SMALL OUTLINE |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
3.9 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
HIGH SPEED |
TO-263AB |
e3 |
20.9 ns |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
300 A |
UNSPECIFIED |
POWER CONTROL |
2.3 V |
UNSPECIFIED |
RECTANGULAR |
1 |
930 ns |
7 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X7 |
ISOLATED |
355 ns |
|||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
23 A |
PLASTIC/EPOXY |
POWER CONTROL |
THROUGH-HOLE |
RECTANGULAR |
1 |
380 ns |
3 |
FLANGE MOUNT |
SILICON |
600 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
ULTRA FAST SOFT RECOVERY |
TO-247AD |
e0 |
111 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
580 A |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
830 ns |
5 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
400 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
12 A |
PLASTIC/EPOXY |
POWER CONTROL |
GULL WING |
RECTANGULAR |
1 |
150 ns |
2 |
SMALL OUTLINE |
SILICON |
600 V |
-40 Cel |
SINGLE |
R-PSSO-G2 |
COLLECTOR |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
16 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.