SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

SGF80N60UF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

85 ns

FGL12040WD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

391 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.9 V

THROUGH-HOLE

RECTANGULAR

1

523 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

25 V

8 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-264AA

e3

105 ns

MGP20N60U

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

142 W

31 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

455 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e0

99 ns

MGC15N43CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 A

UNSPECIFIED

AUTOMOTIVE IGNITION

NO LEAD

UNSPECIFIED

1

21000 ns

UNCASED CHIP

175 Cel

SILICON

460 V

TIN LEAD

UPPER

X-XUUC-N

Not Qualified

e0

5000 ns

TIG065E8

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

FLAT

RECTANGULAR

1

8

SMALL OUTLINE

SILICON

400 V

DUAL

R-PDSO-F8

AFGB20N60SFD-BW

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

40 A

PLASTIC/EPOXY

SWITCHING

21 ns

2.85 V

GULL WING

RECTANGULAR

1

43 ns

123 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

37 ns

-55 Cel

20 V

169 ns

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

28 ns

AEC-Q101

FGH75T65SHDT-155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

109 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

NOT SPECIFIED

NOT SPECIFIED

89 ns

FGP20N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

64 ns

155 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-220AB

e3

29 ns

FGA60N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

120 A

UNSPECIFIED

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

80 ns

204 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-XSFM-T3

Not Qualified

LOW CONDUCTION LOSS

e3

83 ns

MGP7N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

81 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

415 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING

TO-220AB

e0

55 ns

VMAX016001

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

108.8 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

ISOLATED

FAST SWITCHING

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

32 ns

AEC-Q101

MGW12N120D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

123 W

20 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

ULTRAFAST, HIGH SPEED

TO-247AE

e0

FGHL50T65MQDTL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

373 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

77 ns

FGA30N65SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

125 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

41 ns

FGH75T65SQDNL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

467 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

5.6 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

113 ns

MGP4N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

396 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e0

65 ns

MGS05N60D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

ROUND

1

301 ns

3

CYLINDRICAL

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

HIGH SPEED SWITCHING

TO-226AE

e0

FGH75T65SHDT-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

109 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

89 ns

FGA50N100BNTD2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

308 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1000 V

25 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

e3

102 ns

HGTP12N60A4D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

167 W

54 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

THROUGH-HOLE

RECTANGULAR

1

95 ns

180 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

265 ns

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

33 ns

MGY20N120D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

174 W

28 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

710 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY

TO-264AA

e0

190 ns

FGAF40N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

190 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

67 ns

MMG05N60DT3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

.5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

301 ns

4

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

15 V

6 V

TIN LEAD

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

HIGH SPEED

TO-261A

e0

AFGY120T65SPD-B4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

882 W

240 A

PLASTIC/EPOXY

POWER CONTROL

1.85 V

THROUGH-HOLE

RECTANGULAR

1

247 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.2 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

183 ns

AEC-Q101

FGA70N33BTDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

149 W

220 A

UNSPECIFIED

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

244 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

-55 Cel

30 V

4.3 V

SINGLE

R-XSFM-T3

NOT SPECIFIED

NOT SPECIFIED

39 ns

FGHL50T65MQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

SGH30N60RUFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

235 W

48 A

PLASTIC/EPOXY

MOTOR CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

341 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

490 ns

8.5 V

SINGLE

R-PSFM-T3

101 ns

FGH30T65UPD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

170 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

52 ns

FGA50N100BNTD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

760 ns

3

FLANGE MOUNT

150 Cel

SILICON

1000 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

460 ns

FGH20N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

64 ns

155 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

29 ns

FGH75T65UPD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

150 A

PLASTIC/EPOXY

POWER CONTROL

56 ns

2.3 V

THROUGH-HOLE

RECTANGULAR

1

33 ns

197 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

98 ns

-55 Cel

20 V

249 ns

7.5 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

87 ns

FGPF4633TU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

394 ns

3

FLANGE MOUNT

150 Cel

SILICON

330 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

40 ns

FGA6530WDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

176 W

60 A

PLASTIC/EPOXY

SWITCHING

2.3 V

THROUGH-HOLE

RECTANGULAR

1

59.2 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.6 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

40 ns

HGT1S7N60B3DS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

14 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

GULL WING

RECTANGULAR

1

175 ns

350 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

470 ns

6 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

46 ns

SGH40N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

254 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

67 ns

FGA30N120FTDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

339 W

60 A

UNSPECIFIED

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

575 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

25 V

7.5 V

MATTE TIN

SINGLE

R-XSFM-T3

Not Qualified

e3

167 ns

FGA30N60LSDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2000 ns

2870 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

e3

62 ns

FGH75T65SQDT_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

135 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

45 ns

FGH30T65UPDT-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

170 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

7.5 V

TIN

SINGLE

R-PSFM-T3

1

COLLECTOR

TO-247AB

e3

52 ns

FGAF40S65AQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

94 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.1 V

THROUGH-HOLE

RECTANGULAR

1

90.8 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

ISOLATED

e3

NOT SPECIFIED

NOT SPECIFIED

30.3 ns

FGA6540WDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.3 V

THROUGH-HOLE

RECTANGULAR

1

70.4 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.6 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

51.2 ns

FGA40T65SHD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

e3

NOT SPECIFIED

NOT SPECIFIED

51.2 ns

FGAF20N60SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

27 ns

109 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

e3

31 ns

FGH20N60SFDTU_F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

48 ns

145 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

29 ns

AEC-Q101

SGH30N60RUFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

341 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

101 ns

FGH75T65SQD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

149 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

48 ns

FGA6560WDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

306 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

99 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.6 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

85.6 ns

FGB40N60SM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

349 W

80 A

PLASTIC/EPOXY

POWER CONTROL

28 ns

GULL WING

RECTANGULAR

1

17 ns

132 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

37 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.