SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

NGTB20N120IHLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

485 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NGTB25N120SWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

385 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

430 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

178 ns

NGTB30N60SWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

189 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

6.5 V

Tin (Sn)

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

90 ns

SGL50N60RUFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

329 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

TO-264AA

NOT SPECIFIED

NOT SPECIFIED

119 ns

NGTB50N65S1WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

140 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

THROUGH-HOLE

RECTANGULAR

1

228 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Tin (Sn)

SINGLE

R-PSFM-T3

TO-247AD

e3

118 ns

AFGHL75T65SQDC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

196.4 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

73.6 ns

AEC-Q101

AFGHL40T65SPD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

267 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

48 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

7.5 V

20 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

56 ns

AEC-Q101

FGH40T65SHDF_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

126 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

20 V

7.5 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

49 ns

FGH4L40T120LQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

306 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

298 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7.5 V

SINGLE

R-PSFM-T4

TO-247

61 ns

NGTB15N120IHLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

440 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

AFGHL75T65SQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

70 ns

AEC-Q101

FGH40T70SHD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

81 ns

3

FLANGE MOUNT

175 Cel

SILICON

700 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

56 ns

NGTB40N65IHRTG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

405 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

316 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

e3

NGTB15N120IHWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

385 ns

3

FLANGE MOUNT

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

FGA20S125P_SN00336

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1250 V

25 V

7.5 V

SINGLE

R-PSFM-T3

FGD3N60UNDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

6 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

146 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

30

260

7.4 ns

FGH40T65SHD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

51.2 ns

FGY75T95LQDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

453 W

150 A

PLASTIC/EPOXY

POWER CONTROL

1.69 V

THROUGH-HOLE

RECTANGULAR

1

666 ns

3

FLANGE MOUNT

175 Cel

SILICON

950 V

-55 Cel

20 V

6.4 V

SINGLE

R-PSFM-T3

FAST SWITCHING

TO-247

102 ns

SGP23N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

23 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

320 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

RC-IGBT

TO-220AB

55 ns

NGTB30N135IHR1WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

394 W

60 A

PLASTIC/EPOXY

POWER CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

443 ns

3

FLANGE MOUNT

175 Cel

SILICON

1350 V

-40 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

NGTB50N120FL2WAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

200 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

360 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

Tin (Sn)

SINGLE

R-PSFM-T4

TO-247

e3

68 ns

FGH40N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

290 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

160 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

LOW CONDUCTION LOSS

TO-247AB

NOT SPECIFIED

NOT SPECIFIED

69 ns

AFGHL40T65RQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

288 W

46 A

PLASTIC/EPOXY

POWER CONTROL

1.82 V

THROUGH-HOLE

RECTANGULAR

1

149 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.05 V

MATTE TIN

SINGLE

R-PSFM-T3

1

COLLECTOR

TO-247

e3

30

260

74 ns

FGH40T100SMD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

333 W

80 A

PLASTIC/EPOXY

POWER CONTROL

64 ns

2.3 V

THROUGH-HOLE

RECTANGULAR

1

30 ns

305 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1000 V

100 ns

-55 Cel

20 V

397 ns

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

76 ns

AFGHL40T65SQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

239 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

98 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

39 ns

AEC-Q101

NGTB50N65FL2WAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

223 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T4

TO-247

e3

60 ns

SGS10N60RUFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

55 W

16 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

350 ns

284 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

410 ns

8.5 V

SINGLE

R-PSFM-T3

ISOLATED

LOW CONDUCTION LOSS

TO-220AB

49 ns

NGTB20N120IHWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

395 ns

3

FLANGE MOUNT

SILICON

1200 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

AFGHL25T120RLD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 W

48 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

205 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7.1 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

43.2 ns

AEC-Q101

NGTB40N120FL2WAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

360 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

65 ns

NGTB75N65FL2WAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

536 W

200 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

262 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

78 ns

FGH40T65SPD-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

267 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

48 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247

e3

56 ns

AEC-Q101

NGTB20N140IHR3WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

278 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.92 V

THROUGH-HOLE

RECTANGULAR

1

333 ns

3

FLANGE MOUNT

175 Cel

SILICON

1400 V

-40 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

AFGH40T65SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

88.8 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

Tin (Sn)

SINGLE

R-PSFM-T3

ISOLATED

TO-247AB

e3

27.2 ns

AEC-Q101

NGTB25N120LWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192 W

50 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

475 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

117 ns

NGTB20N60T2TF1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

56 W

40 A

PLASTIC/EPOXY

POWER CONTROL

1.7 V

THROUGH-HOLE

RECTANGULAR

1

220 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

30 V

7 V

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

152 ns

AFGHL40T120RLD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

529 W

48 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

276 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

80 ns

AEC-Q101

NGTB50N60S1WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

417 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

341 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

TO-247AD

e3

139 ns

NGTB40N120L3WG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

454 W

160 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

376 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

49 ns

FGH40T70SHD-F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.15 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

700 V

-55 Cel

20 V

7.5 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

AFGHL25T120RHD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

261 W

48 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

219 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

7.3 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

43 ns

AEC-Q101

FGA20S140P

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

776 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1400 V

25 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

322 ns

FGP15N60UNDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

178 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

12.8 ns

69.8 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-220AB

e3

18.8 ns

AFGH50T65SQDN

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

GENERAL PURPOSE

THROUGH-HOLE

RECTANGULAR

1

110 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

Tin (Sn)

SINGLE

R-PSFM-T3

TO-247AB

e3

33 ns

AEC-Q101

NGTB25N120FL2WAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

385 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

313 ns

4

FLANGE MOUNT

175 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

TIN

SINGLE

R-PSFM-T4

TO-247

e3

34 ns

FGA15S125P

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

670 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1250 V

25 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

e3

331 ns

NGTB40N120IHLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

565 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

FGH40T65SH_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

85.6 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

TO-247AB

e3

51.2 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.