SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
MGP21N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	140 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		558 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED	TO-220AB	e0			90 ns
FGHL40T65LQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.3 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED
MGP11N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		442 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRAFAST, HIGH SPEED	TO-220AB	e0			68 ns
FGH30N120FTD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		60 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		575 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V							SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AB		NOT SPECIFIED	NOT SPECIFIED	167 ns
HGT1S3N60A4DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	17 A	PLASTIC/EPOXY	POWER CONTROL	15 ns	2.7 V	GULL WING	RECTANGULAR	1	100 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V	23 ns	-55 Cel	20 V	265 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				17.5 ns
FGY60T120SQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	517 W	120 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		1.95 V	THROUGH-HOLE	RECTANGULAR	1		468 ns	3	FLANGE MOUNT		175 Cel	SILICON	1200 V		-55 Cel	25 V		6.5 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR		HIGH SPEED SWITCHING	TO-247	e3	NOT SPECIFIED	NOT SPECIFIED	112 ns
ENGAFGHL50T65SQDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	467 W	88.7 A	PLASTIC/EPOXY				THROUGH-HOLE	RECTANGULAR	1		100.5 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V				SINGLE	R-PSFM-T3		COLLECTOR			TO-247				36.76 ns
SGS23N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	73 W	23 A	PLASTIC/EPOXY	POWER CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	150 ns	130 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	280 ns	6.5 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				44 ns
HGTP7N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	THROUGH-HOLE	RECTANGULAR	1	85 ns	205 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-220AB		NOT SPECIFIED	NOT SPECIFIED	17 ns
FGY120T65SPD-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		1.85 V	THROUGH-HOLE	RECTANGULAR	1		247 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.2 V		SINGLE	R-PSFM-T3							NOT SPECIFIED	NOT SPECIFIED	187 ns	AEC-Q101
TIG065E8TL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES			PLASTIC/EPOXY				FLAT	RECTANGULAR	1			8	SMALL OUTLINE			SILICON	400 V							DUAL	R-PDSO-F8
HGT1S12N60C3DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	24 A	PLASTIC/EPOXY	POWER CONTROL		2.2 V	GULL WING	RECTANGULAR	1	275 ns	480 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-40 Cel	20 V	675 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR		RC-IGBT	TO-263AB				48 ns
AFGY160T65SPD-B4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	882 W	240 A	PLASTIC/EPOXY	POWER CONTROL		2.05 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.3 V		SINGLE	R-PSFM-T3					TO-247					AEC-Q101
FGPF4565	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	30 A	PLASTIC/EPOXY	POWER CONTROL		1.88 V	THROUGH-HOLE	RECTANGULAR	1		242.8 ns	3	FLANGE MOUNT		150 Cel	SILICON	650 V		-55 Cel	25 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			72 ns
FGA5065ADF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	100 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		2.2 V	THROUGH-HOLE	RECTANGULAR	1		80 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3						e3	NOT SPECIFIED	NOT SPECIFIED	57.6 ns
FGH75T65SQDTL4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	375 W	150 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		352 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.4 V	MATTE TIN	SINGLE	R-PSFM-T4				RC-IGBT	TO-247	e3			80 ns
MMG05N60D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1 W	.5 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		301 ns	4	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			15 V		6 V	TIN LEAD	DUAL	R-PDSO-G4		COLLECTOR	Not Qualified	HIGH SPEED	TO-261A	e0
HGT1S7N60B3DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	14 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	GULL WING	RECTANGULAR	1	175 ns	350 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	470 ns	6 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				46 ns
FGA50T65SHD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	319 W	100 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		90.6 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3				FAST SWITCHING		e3			57.6 ns
HGTP3N60A4D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		17 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		180 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			17.5 ns
MGY25N120D	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	212 W	38 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		876 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified	ULTRAFAST, HIGH SPEED	TO-264AA	e0			214 ns
FGHL50T65LQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.3 V	THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	30 V		6 V		SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED
FGH20N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	165 W	40 A	PLASTIC/EPOXY	POWER CONTROL		2.4 V	THROUGH-HOLE	RECTANGULAR	1	64 ns	119 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V		6.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-247AB				30 ns
MGW14N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	112 W	18 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING			THROUGH-HOLE	RECTANGULAR	1		418 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified		TO-247AE	e0			62 ns
FGA40T65SHDF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.81 V	THROUGH-HOLE	RECTANGULAR	1		126 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			49 ns
MGP4N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	62.5 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		396 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		6 V	Tin/Lead (Sn/Pb)	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY	TO-220AB	e0			65 ns
FGHL75T65LQDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	469 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.35 V	THROUGH-HOLE	RECTANGULAR	1		696 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED	88 ns
HGT1S12N60A4DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	95 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns		Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified		TO-263AB	e3	30	260	33 ns
HGT1S7N60A4DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	125 W	34 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	85 ns	205 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	235 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-263AB		NOT SPECIFIED	NOT SPECIFIED	17 ns
FGY100T65SCDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	750 W	200 A	PLASTIC/EPOXY	GENERAL PURPOSE SWITCHING		1.9 V	THROUGH-HOLE	RECTANGULAR	1		410 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	25 V		6.9 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR		FAST SWITCHING	TO-247	e3			240 ns
MGP15N43CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	136 W	15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1		21000 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	460 V			17 V		2.1 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-220AB	e0			5000 ns
FGB3056-F085	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	200 W	29 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION	2400 ns	1.55 V	GULL WING	RECTANGULAR	1	1800 ns	6200 ns	2	SMALL OUTLINE		175 Cel	SILICON	560 V	3700 ns	-40 Cel		10000 ns	2.2 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AB	e3	30	260	1560 ns
FGHL50T65MQDT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	268 W	80 A	PLASTIC/EPOXY	POWER CONTROL		1.8 V	THROUGH-HOLE	RECTANGULAR	1		144 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3		COLLECTOR			TO-247	e3			51 ns
FGA50S110P	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	50 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		492 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1100 V			25 V		7.5 V	MATTE TIN	SINGLE	R-PSFM-T3						e3			370 ns
SGH10N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	16 A	PLASTIC/EPOXY	MOTOR CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	284 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	410 ns	8.5 V		SINGLE	R-PSFM-T3									49 ns
MGP11N60E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	96 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		442 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRAFAST, HIGH SPEED	TO-220AB	e0			68 ns
MGB15N43CLT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		15 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			GULL WING	RECTANGULAR	1		21000 ns	2	SMALL OUTLINE			SILICON	460 V							SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified						5000 ns
FGHL40T65MQD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	238 W	80 A	PLASTIC/EPOXY	POWER AMPLIFIER		1.8 V	THROUGH-HOLE	RECTANGULAR	1		203 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6 V	Matte Tin (Sn) - annealed	SINGLE	R-PSFM-T3				RC-IGBT	TO-247	e3			52 ns
MGP20N14CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	150 W	20 A	PLASTIC/EPOXY	AUTOMOTIVE IGNITION			THROUGH-HOLE	RECTANGULAR	1			3	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	135 V			10 V			TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOGIC LEVEL	TO-220AB	e0
SGH20N60RUFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		32 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		363 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING		e3			81 ns
MGW21N60ED	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	142 W	31 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		558 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V			20 V		8 V	TIN LEAD	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	ULTRAFAST, HIGH SPEED	TO-247AE	e0			90 ns
HGT1S12N60A4DS9A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	167 W	54 A	PLASTIC/EPOXY	POWER CONTROL		2.7 V	GULL WING	RECTANGULAR	1	95 ns	180 ns	2	SMALL OUTLINE		150 Cel	SILICON	600 V		-55 Cel	20 V	265 ns			SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				33 ns
SGP13N60UFDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		13 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		253 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V						MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified	LOW CONDUCTION LOSS, HIGH SPEED SWITCHING	TO-220AB	e3			62 ns
SGP13N60UFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	60 W	13 A	PLASTIC/EPOXY	MOTOR CONTROL		2.6 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	253 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	450 ns	6.5 V		SINGLE	R-PSFM-T3					TO-220AB				62 ns
SGP10N60RUFD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	75 W	16 A	PLASTIC/EPOXY	POWER CONTROL		2.8 V	THROUGH-HOLE	RECTANGULAR	1	350 ns	284 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V		-55 Cel	20 V	410 ns	8.5 V		SINGLE	R-PSFM-T3				RC-IGBT	TO-220AB				49 ns
AFGHL30T65RQDN	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	230.8 W	42 A	PLASTIC/EPOXY	POWER CONTROL		1.82 V	THROUGH-HOLE	RECTANGULAR	1		139 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V		-55 Cel	20 V		6.3 V	MATTE TIN	SINGLE	R-PSFM-T3	1	COLLECTOR			TO-247	e3	30	260	48 ns
NGTB40N60IHLWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		80 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		230 ns	3	FLANGE MOUNT			SILICON	600 V						TIN	SINGLE	R-PSFM-T3					TO-247	e3			110 ns
NGTB15N60S1EG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	117 W	30 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		440 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	650 V			20 V		6.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			93 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.