FGB3056-F085 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FGB3056-F085
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 29 A; Peak Reflow Temperature (C): 260;
Datasheet	FGB3056-F085 Datasheet
In Stock	2,130

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	29 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	2400 ns
Transistor Application:	AUTOMOTIVE IGNITION
Maximum Turn On Time (ton):	3700 ns
Maximum Gate-Emitter Threshold Voltage:	2.2 V
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
Nominal Turn Off Time (toff):	6200 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	1560 ns
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	10000 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	1800 ns
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	560 V
Peak Reflow Temperature (C):	260
Maximum VCEsat:	1.55 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,130	$1.500	$3,195.000

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