SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FGA4060ADF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.3 V

THROUGH-HOLE

RECTANGULAR

1

70.4 ns

3

FLANGE MOUNT

175 Cel

SILICON

600 V

-55 Cel

20 V

7.6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

FAST SWITCHING

e3

51.2 ns

SGH15N60RUFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

24 A

PLASTIC/EPOXY

MOTOR CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

260 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

265 ns

8.5 V

SINGLE

R-PSFM-T3

54 ns

FGH75T65SHDTL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

455 W

150 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

FGA40T65UQDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

231 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.67 V

THROUGH-HOLE

RECTANGULAR

1

314 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

5.5 V

MATTE TIN

SINGLE

R-PSFM-T3

RC-IGBT

e3

52 ns

FGH50T65SQD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

110 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.4 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

33 ns

SGH40N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

254 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

67 ns

HGTP7N60B3D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

14 A

PLASTIC/EPOXY

POWER CONTROL

2.1 V

THROUGH-HOLE

RECTANGULAR

1

175 ns

350 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

470 ns

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

46 ns

SGH10N60RUFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

16 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

284 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

49 ns

SGH20N60RUFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195 W

32 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

400 ns

363 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

475 ns

8.5 V

SINGLE

R-PSFM-T3

RC-IGBT

81 ns

MGB15N38CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

350 V

2.1 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

Not Qualified

e0

FGH50T65UPD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

340 W

100 A

PLASTIC/EPOXY

POWER CONTROL

77 ns

THROUGH-HOLE

RECTANGULAR

1

29 ns

185 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

25 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

101 ns

SGH23N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

23 A

PLASTIC/EPOXY

SWITCHING

2.6 V

THROUGH-HOLE

RECTANGULAR

1

150 ns

130 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

280 ns

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

42 ns

SGH80N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

195 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.6 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

310 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

RC-IGBT

85 ns

FGH75T65UPD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

150 A

PLASTIC/EPOXY

POWER CONTROL

56 ns

2.3 V

THROUGH-HOLE

RECTANGULAR

1

33 ns

197 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

650 V

98 ns

-55 Cel

20 V

249 ns

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

87 ns

FGHL75T65MQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

RC-IGBT

TO-247

e3

92 ns

FGA30S120P

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

500 W

60 A

PLASTIC/EPOXY

POWER CONTROL

490 ns

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1300 V

25 V

7.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

e3

NOT SPECIFIED

NOT SPECIFIED

FGH20N60SFDTU-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

165 W

40 A

PLASTIC/EPOXY

POWER CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

48 ns

110 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247AB

e3

31 ns

AEC-Q101

FGAF20S65AQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

75 W

40 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

2.1 V

THROUGH-HOLE

RECTANGULAR

1

136 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

FAST SWITCHING

e3

29 ns

SGS23N60UFDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

320 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

e3

55 ns

FGH30S150P

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1080 ns

3

FLANGE MOUNT

175 Cel

SILICON

1500 V

-55 Cel

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247AB

e3

372 ns

FGAF30S65AQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

60 A

PLASTIC/EPOXY

SWITCHING

2.1 V

THROUGH-HOLE

RECTANGULAR

1

166 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

e3

NOT SPECIFIED

NOT SPECIFIED

30 ns

MGP14N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

18 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

420 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED

TO-220AB

e0

235

62 ns

FGY160T65SPD-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

882 W

240 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

308 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.3 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

288 ns

FGHL75T65LQDTL4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

469 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

660 ns

4

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T4

TO-247

e3

60 ns

FGH30N60LSDTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

480 W

60 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

2000 ns

2870 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

62 ns

AFGB40T65SPD-BW

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

267 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

GULL WING

RECTANGULAR

1

51 ns

2

SMALL OUTLINE

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

e3

30

260

49 ns

AEC-Q101

MGS13002D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

.5 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

ROUND

1

301 ns

3

CYLINDRICAL

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

15 V

6 V

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

HIGH SPEED

TO-226AE

e0

FGHL40T65MQDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

238 W

60 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

113 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

40 ns

TIG056BF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

410 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

400 V

20 V

5 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

78 ns

HGT1S7N60A4DS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

34 A

PLASTIC/EPOXY

POWER CONTROL

2.7 V

GULL WING

RECTANGULAR

1

85 ns

205 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-55 Cel

20 V

235 ns

7 V

SINGLE

R-PSSO-G2

COLLECTOR

LOW CONDUCTION LOSS

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

17 ns

FGHL40S65UQ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

231 W

80 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

1.7 V

THROUGH-HOLE

RECTANGULAR

1

340 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.5 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

58 ns

FGHL75T65MQDT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.8 V

THROUGH-HOLE

RECTANGULAR

1

184 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247

e3

70 ns

FGB7N60UNDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

14 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

89 ns

146.8 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

10.3 ns

AFGY120T65SPD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

882 W

160 A

PLASTIC/EPOXY

POWER CONTROL

2.05 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6.3 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

FGAF40N60UFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

3 V

THROUGH-HOLE

RECTANGULAR

1

250 ns

190 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

450 ns

6.5 V

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

67 ns

FGA40S65SH

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

268 W

80 A

PLASTIC/EPOXY

1.81 V

THROUGH-HOLE

RECTANGULAR

1

233.2 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

LOW CONDUCTION LOSS

e3

106.4 ns

FGH60N60UFDTU-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

120 A

PLASTIC/EPOXY

POWER CONTROL

2.9 V

THROUGH-HOLE

RECTANGULAR

1

80 ns

218 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

RC-IGBT

TO-247AB

e3

83 ns

AEC-Q101

FGB5N60UNDF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

73.5 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

GULL WING

RECTANGULAR

1

202 ns

151.6 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8.5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-263AB

e3

30

260

7.5 ns

FGP5N60LS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

83 W

10 A

PLASTIC/EPOXY

GENERAL PURPOSE SWITCHING

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

4.5 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

e3

5.9 ns

FGH25N120FTDS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

313 W

50 A

PLASTIC/EPOXY

POWER CONTROL

53 ns

THROUGH-HOLE

RECTANGULAR

1

132 ns

299 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

25 V

7.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AB

e3

63 ns

HGTP7N60C3DR

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

14 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

490 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-220AB

20 ns

MGP15N38CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

136 W

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

350 V

17 V

2.1 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOGIC LEVEL

TO-220AB

e0

FGHL75T65LQD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

80 A

PLASTIC/EPOXY

POWER CONTROL

1.35 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-55 Cel

20 V

6 V

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

NOT SPECIFIED

NOT SPECIFIED

MGP15N60U

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

96 W

26 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

7 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

FGH75T65SHD_F155

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

100 ns

3

FLANGE MOUNT

SILICON

650 V

Matte Tin (Sn) - annealed

SINGLE

R-PSFM-T3

TO-247AB

e3

NOT SPECIFIED

NOT SPECIFIED

84.8 ns

HGT1S12N60C3DS9A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

24 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

GULL WING

RECTANGULAR

1

275 ns

480 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-40 Cel

20 V

675 ns

6 V

SINGLE

R-PSSO-G2

COLLECTOR

RC-IGBT

TO-263AB

48 ns

MGP7N60ED

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

81 W

10 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

415 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

8 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY

TO-220AB

e0

55 ns

NGB8207ANT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

14700 ns

2

SMALL OUTLINE

175 Cel

SILICON

365 V

MATTE TIN

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

e3

2450 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.