MGP7N60ED by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MGP7N60ED
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 81 W; Maximum Collector Current (IC): 10 A; Terminal Form: THROUGH-HOLE;
Datasheet	MGP7N60ED Datasheet
In Stock	2,200

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	10 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage:	8 V
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
Nominal Turn Off Time (toff):	415 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	81 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	55 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	HIGH SPEED SWITCHING, ULTRA FAST SOFT RECOVERY
Maximum Gate-Emitter Voltage:	20 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,200	$0.452	$994.400

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