Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Emitter Current | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Maximum Operating Temperature | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Minimum Intrinsic Stand-off Ratio | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Intrinsic Stand-off Ratio | Minimum Static Inter-Base Resistance | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1390 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1890 ns |
12 |
FLANGE MOUNT |
175 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1390 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1890 ns |
12 |
FLANGE MOUNT |
175 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
520 W |
170 A |
UNSPECIFIED |
MOTOR CONTROL |
2.42 V |
UNSPECIFIED |
RECTANGULAR |
1 |
414 ns |
12 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
79 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
PLASTIC/EPOXY |
GENERAL PURPOSE |
UNSPECIFIED |
RECTANGULAR |
1 |
1300 ns |
10 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
UPPER |
R-PUFM-X10 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
UL APPROVED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
PLASTIC/EPOXY |
GENERAL PURPOSE |
UNSPECIFIED |
RECTANGULAR |
1 |
1300 ns |
10 |
FLANGE MOUNT |
SILICON |
1200 V |
-40 Cel |
UPPER |
R-PUFM-X10 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
5100 W |
900 A |
UNSPECIFIED |
POWER CONTROL |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1300 ns |
6 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X6 |
1 |
ISOLATED |
Not Qualified |
260 |
370 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
3350 W |
600 A |
UNSPECIFIED |
POWER CONTROL |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1350 ns |
8 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X8 |
1 |
ISOLATED |
Not Qualified |
260 |
370 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
600 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1350 ns |
8 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X8 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
7700 W |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1200 ns |
6 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X6 |
1 |
ISOLATED |
Not Qualified |
260 |
340 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
6250 W |
1390 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1910 ns |
12 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
830 ns |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
7700 W |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1200 ns |
6 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X6 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
7700 W |
1400 A |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1200 ns |
11 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X11 |
1 |
ISOLATED |
Not Qualified |
260 |
340 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1000 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1890 ns |
12 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-PUFM-X12 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
600 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1350 ns |
8 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X8 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
5100 W |
900 A |
UNSPECIFIED |
POWER CONTROL |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1300 ns |
8 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X8 |
1 |
ISOLATED |
Not Qualified |
260 |
370 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
930 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1870 ns |
10 |
FLANGE MOUNT |
175 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1000 A |
PLASTIC/EPOXY |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1890 ns |
12 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-PUFM-X12 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
5100 W |
PLASTIC/EPOXY |
POWER CONTROL |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1300 ns |
10 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X10 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
UL APPROVED |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
600 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1780 ns |
5 |
FLANGE MOUNT |
SILICON |
250 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
Not Qualified |
LOW CONDUCTION LOSS |
40 |
260 |
2010 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
930 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1870 ns |
10 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
765 ns |
|||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
930 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1870 ns |
10 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
765 ns |
UL RECOGNIZED |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
UNSPECIFIED |
RECTANGULAR |
1 |
960 ns |
9 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
275 ns |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
960 ns |
11 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
275 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
4150 W |
930 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1870 ns |
10 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
6250 W |
1390 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1890 ns |
12 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
6250 W |
1390 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1890 ns |
12 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1300 ns |
8 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X8 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
960 ns |
11 |
FLANGE MOUNT |
SILICON |
600 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
275 ns |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
900 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1300 ns |
6 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X6 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1390 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1910 ns |
12 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
830 ns |
|||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1400 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1200 ns |
11 |
FLANGE MOUNT |
175 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
340 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
5100 W |
PLASTIC/EPOXY |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1300 ns |
10 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-PUFM-X10 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
370 ns |
UL APPROVED |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
600 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1780 ns |
5 |
FLANGE MOUNT |
150 Cel |
SILICON |
250 V |
UPPER |
R-XUFM-X5 |
ISOLATED |
LOW CONDUCTION LOSS |
NOT SPECIFIED |
NOT SPECIFIED |
2010 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
930 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1870 ns |
10 |
FLANGE MOUNT |
SILICON |
1700 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
765 ns |
UL RECOGNIZED |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-Channel |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
6250 W |
1390 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1910 ns |
12 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X12 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
830 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
930 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
1870 ns |
10 |
FLANGE MOUNT |
175 Cel |
SILICON |
1700 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
2250 W |
600 A |
UNSPECIFIED |
1.6 V |
UNSPECIFIED |
RECTANGULAR |
1 |
960 ns |
9 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X9 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
275 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
4150 W |
930 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1870 ns |
10 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
175 Cel |
SILICON |
1700 V |
20 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
720 ns |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
3350 W |
600 A |
UNSPECIFIED |
POWER CONTROL |
2.05 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1350 ns |
8 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X8 |
1 |
ISOLATED |
Not Qualified |
260 |
370 ns |
||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
7700 W |
UNSPECIFIED |
POWER CONTROL |
2.1 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1200 ns |
6 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
-40 Cel |
20 V |
6.5 V |
UPPER |
R-XUFM-X6 |
ISOLATED |
340 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
208 W |
69 A |
UNSPECIFIED |
MOTOR CONTROL |
2.8 V |
UNSPECIFIED |
RECTANGULAR |
1 |
330 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
105 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1100 A |
UNSPECIFIED |
POWER CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
4400 ns |
11 |
FLANGE MOUNT |
SILICON |
300 V |
UPPER |
R-XUFM-X11 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
4300 ns |
|||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
1390 W |
400 A |
UNSPECIFIED |
POWER CONTROL |
2.45 V |
UNSPECIFIED |
RECTANGULAR |
1 |
1200 ns |
20 |
FLANGE MOUNT |
150 Cel |
SILICON |
1700 V |
-40 Cel |
20 V |
6.4 V |
UPPER |
R-XUFM-X20 |
ISOLATED |
430 ns |
IEC-60747; UL RECOGNIZED |
|||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
169 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
690 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
160 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
138 A |
UNSPECIFIED |
MOTOR CONTROL |
UNSPECIFIED |
RECTANGULAR |
1 |
700 ns |
13 |
FLANGE MOUNT |
150 Cel |
SILICON |
1200 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
||||||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
208 W |
49 A |
UNSPECIFIED |
POWER CONTROL |
3.7 V |
UNSPECIFIED |
RECTANGULAR |
1 |
570 ns |
10 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
1200 V |
20 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
170 ns |
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|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
82 W |
24.5 A |
UNSPECIFIED |
MOTOR CONTROL |
2.9 V |
UNSPECIFIED |
RECTANGULAR |
1 |
310 ns |
10 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X10 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
75 ns |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR |
NO |
379 W |
121 A |
UNSPECIFIED |
MOTOR CONTROL |
2.9 V |
UNSPECIFIED |
RECTANGULAR |
1 |
180 ns |
13 |
FLANGE MOUNT |
Insulated Gate BIP Transistors |
150 Cel |
SILICON |
600 V |
20 V |
UPPER |
R-XUFM-X13 |
ISOLATED |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
36 ns |
Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.
The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.
The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.
IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.