SINGLE WITH BUILT-IN DIODE AND THERMISTOR Insulated Gate Bipolar Transistors (IGBT) 52

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

FD1000R17IE4BOSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1390 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

DF1000R17IE4BOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1390 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

APTGLQ100DA120T1G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

520 W

170 A

UNSPECIFIED

MOTOR CONTROL

2.42 V

UNSPECIFIED

RECTANGULAR

1

414 ns

12

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X12

ISOLATED

79 ns

DF900R12IP4DVBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

1

1300 ns

10

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

UL APPROVED

FD900R12IP4DVBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

PLASTIC/EPOXY

GENERAL PURPOSE

UNSPECIFIED

RECTANGULAR

1

1300 ns

10

FLANGE MOUNT

SILICON

1200 V

-40 Cel

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

UL RECOGNIZED

DF900R12IP4D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

5100 W

900 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

1

1300 ns

6

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X6

1

ISOLATED

Not Qualified

260

370 ns

DF600R12IP4D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

3350 W

600 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

1

1350 ns

8

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X8

1

ISOLATED

Not Qualified

260

370 ns

FD600R12IP4DBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1350 ns

8

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X8

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

370 ns

DF1400R12IP4D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

7700 W

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

6

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X6

1

ISOLATED

Not Qualified

260

340 ns

DF1000R17IE4D_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1910 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

830 ns

DF1400R12IP4DBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

7700 W

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

6

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X6

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

FD1400R12IP4D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

7700 W

1400 A

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X11

1

ISOLATED

Not Qualified

260

340 ns

DF1000R17IE4P

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

720 ns

DF600R12IP4DBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1350 ns

8

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X8

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

370 ns

FD900R12IP4D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

5100 W

900 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

1

1300 ns

8

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X8

1

ISOLATED

Not Qualified

260

370 ns

DF650R17IE4BOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1870 ns

10

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

DF1000R17IE4PBPSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1000 A

PLASTIC/EPOXY

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

720 ns

FD900R12IP4DV

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

5100 W

PLASTIC/EPOXY

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

1

1300 ns

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

UL APPROVED

GA600HD25S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1780 ns

5

FLANGE MOUNT

SILICON

250 V

UPPER

R-XUFM-X5

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

40

260

2010 ns

DF650R17IE4D_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1870 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

765 ns

FD650R17IE4DB2BOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1870 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

765 ns

UL RECOGNIZED

FD600R06ME3S2BOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

1

960 ns

9

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X9

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

275 ns

FD600R06ME3_B11_S2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

960 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

275 ns

FD650R17IE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

4150 W

930 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1870 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

FD1000R17IE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

DF1000R17IE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1890 ns

12

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

FD900R12IP4DBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1300 ns

8

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X8

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

370 ns

FD600R06ME3B11S2BOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

960 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

275 ns

DF900R12IP4DBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

900 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1300 ns

6

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X6

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

370 ns

FD1000R17IE4D_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1390 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1910 ns

12

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X12

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

830 ns

FD1400R12IP4DBOSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1200 ns

11

FLANGE MOUNT

175 Cel

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

340 ns

DF900R12IP4DV

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

5100 W

PLASTIC/EPOXY

2.05 V

UNSPECIFIED

RECTANGULAR

1

1300 ns

10

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-PUFM-X10

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

370 ns

UL APPROVED

GA600HD25SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

600 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1780 ns

5

FLANGE MOUNT

150 Cel

SILICON

250 V

UPPER

R-XUFM-X5

ISOLATED

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

2010 ns

FD650R17IE4D_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1870 ns

10

FLANGE MOUNT

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

765 ns

UL RECOGNIZED

DF1000R17IE4DB2BOSA1

Infineon Technologies

N-Channel

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

6250 W

1390 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1910 ns

12

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X12

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

830 ns

FD650R17IE4BOSA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

930 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

1870 ns

10

FLANGE MOUNT

175 Cel

SILICON

1700 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

FD600R06ME3_S2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

2250 W

600 A

UNSPECIFIED

1.6 V

UNSPECIFIED

RECTANGULAR

1

960 ns

9

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X9

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

275 ns

DF650R17IE4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

4150 W

930 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1870 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

720 ns

FD600R12IP4D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

3350 W

600 A

UNSPECIFIED

POWER CONTROL

2.05 V

UNSPECIFIED

RECTANGULAR

1

1350 ns

8

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X8

1

ISOLATED

Not Qualified

260

370 ns

SP000721134

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

7700 W

UNSPECIFIED

POWER CONTROL

2.1 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

6

FLANGE MOUNT

150 Cel

SILICON

1200 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X6

ISOLATED

340 ns

VID75-06P1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

208 W

69 A

UNSPECIFIED

MOTOR CONTROL

2.8 V

UNSPECIFIED

RECTANGULAR

1

330 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

105 ns

VIO1000-03G4

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1100 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

4400 ns

11

FLANGE MOUNT

SILICON

300 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

4300 ns

MITA300RF1700PTED

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1390 W

400 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

20

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

430 ns

IEC-60747; UL RECOGNIZED

VID160-12P1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

169 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

690 ns

13

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

160 ns

VID125-12P1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

138 A

UNSPECIFIED

MOTOR CONTROL

UNSPECIFIED

RECTANGULAR

1

700 ns

13

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

150 ns

VID50-12P1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

208 W

49 A

UNSPECIFIED

POWER CONTROL

3.7 V

UNSPECIFIED

RECTANGULAR

1

570 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

170 ns

VID25-06P1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

82 W

24.5 A

UNSPECIFIED

MOTOR CONTROL

2.9 V

UNSPECIFIED

RECTANGULAR

1

310 ns

10

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X10

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

75 ns

VID130-06P1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

379 W

121 A

UNSPECIFIED

MOTOR CONTROL

2.9 V

UNSPECIFIED

RECTANGULAR

1

180 ns

13

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X13

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

36 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.