24 A Insulated Gate Bipolar Transistors (IGBT) 39

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

HGTP12N60C3D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

24 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

THROUGH-HOLE

RECTANGULAR

1

275 ns

480 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

675 ns

6 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

RC-IGBT

TO-220AB

e3

48 ns

STGF20NB60S

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

3600 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

162 ns

SKIIP13NAB065V1

Semikron International

N-CHANNEL

COMPLEX

NO

24 A

UNSPECIFIED

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

205 ns

24

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN/SILVER

UPPER

R-XUFM-X24

ISOLATED

Not Qualified

e3/e4

NOT SPECIFIED

NOT SPECIFIED

50 ns

UL RECOGNIZED

IRGB4056DPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

140 W

24 A

PLASTIC/EPOXY

POWER CONTROL

24 ns

THROUGH-HOLE

RECTANGULAR

1

31 ns

143 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

6.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

48 ns

SK20DGDL065ET

Semikron International

N-CHANNEL

COMPLEX

NO

24 A

PLASTIC/EPOXY

POWER CONTROL

2.5 V

UNSPECIFIED

RECTANGULAR

7

190 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

TIN/SILVER

UPPER

R-PUFM-X23

ISOLATED

Not Qualified

ULTRA FAST

e3/e4

NOT SPECIFIED

NOT SPECIFIED

49 ns

IEC-60747-1

HGTG12N60C3D

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

24 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

480 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

30 ns

IRGS4056DPBF

Infineon Technologies

N-CHANNEL

YES

140 W

24 A

PLASTIC/EPOXY

24 ns

GULL WING

RECTANGULAR

31 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

600 V

30 V

6.5 V

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

SGH15N60RUFD

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

160 W

24 A

PLASTIC/EPOXY

MOTOR CONTROL

2.8 V

THROUGH-HOLE

RECTANGULAR

1

200 ns

260 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

-55 Cel

20 V

265 ns

8.5 V

SINGLE

R-PSFM-T3

54 ns

HGT1S12N60C3DS9A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

24 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

GULL WING

RECTANGULAR

1

275 ns

480 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-40 Cel

20 V

675 ns

6 V

SINGLE

R-PSSO-G2

COLLECTOR

RC-IGBT

TO-263AB

48 ns

HGT1S12N60C3DS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

24 A

PLASTIC/EPOXY

POWER CONTROL

2.2 V

GULL WING

RECTANGULAR

1

275 ns

480 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

-40 Cel

20 V

675 ns

6 V

SINGLE

R-PSSO-G2

COLLECTOR

RC-IGBT

TO-263AB

48 ns

NGTB15N60R2FG

Onsemi

N-CHANNEL

NO

54 W

24 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

7 V

MATTE TIN

e3

STGW12NB60HD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

120 W

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

295 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e0

51 ns

STGW12NB60H

STMicroelectronics

N-CHANNEL

SINGLE

NO

120 W

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

295 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e0

51 ns

STGP12NB60H

STMicroelectronics

N-CHANNEL

SINGLE

NO

100 W

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

295 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

TIN LEAD

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

51 ns

BUK856-800A,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

800 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-220AB

70 ns

BUK856-800A

NXP Semiconductors

N-CHANNEL

SINGLE

NO

24 A

PLASTIC/EPOXY

MOTOR CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

800 ns

300 ns

3

FLANGE MOUNT

125 W

150 Cel

SILICON

800 V

30 V

450 ns

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

70 ns

FB15R06W1E3BOMA1

Infineon Technologies

N-CHANNEL

COMPLEX

NO

24 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

260 ns

23

FLANGE MOUNT

175 Cel

SILICON

600 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

IRGS4056DTRLPBF

Infineon Technologies

N-CHANNEL

YES

140 W

24 A

PLASTIC/EPOXY

24 ns

GULL WING

RECTANGULAR

31 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

600 V

30 V

6.5 V

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

IRGS4056DTRRPBF

Infineon Technologies

N-CHANNEL

YES

140 W

24 A

PLASTIC/EPOXY

24 ns

GULL WING

RECTANGULAR

31 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

600 V

30 V

6.5 V

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

FB15R06W1E3

Infineon Technologies

N-CHANNEL

COMPLEX

NO

81 W

24 A

UNSPECIFIED

2 V

UNSPECIFIED

RECTANGULAR

6

260 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

UPPER

R-XUFM-X23

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

29 ns

FB15R06W1E3ENG

Infineon Technologies

N-Channel

81 W

24 A

2 V

260 ns

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

ISOLATED

29 ns

FS15R12VT3

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

86 W

24 A

UNSPECIFIED

2.15 V

UNSPECIFIED

RECTANGULAR

6

590 ns

11

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

72 ns

FS15R12VT3BOMA1

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

24 A

UNSPECIFIED

UNSPECIFIED

RECTANGULAR

6

590 ns

11

FLANGE MOUNT

150 Cel

SILICON

1200 V

UPPER

R-XUFM-X11

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

72 ns

IRG7IC30FDPBF

Infineon Technologies

N-Channel

24 A

1813 ns

150 Cel

SILICON

600 V

-55 Cel

30 V

7 V

69 ns

IRGB4056D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

24 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

143 ns

3

FLANGE MOUNT

SILICON

600 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

48 ns

IRG7SC12FTRRPBF

Infineon Technologies

N-CHANNEL

YES

69 W

24 A

40 ns

180 ns

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7 V

IRG7SC12FPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

69 W

24 A

PLASTIC/EPOXY

POWER CONTROL

40 ns

1.85 V

GULL WING

RECTANGULAR

1

180 ns

330 ns

2

SMALL OUTLINE

150 Cel

SILICON

600 V

100 ns

-55 Cel

30 V

450 ns

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

60 ns

IRG7SC12FTRLPBF

Infineon Technologies

N-CHANNEL

YES

69 W

24 A

40 ns

180 ns

Insulated Gate BIP Transistors

150 Cel

600 V

30 V

7 V

2SH19

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 W

24 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

IXGX12N90C

Littelfuse

N-CHANNEL

SINGLE

NO

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

350 ns

3

IN-LINE

150 Cel

SILICON

900 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

Not Qualified

e1

40 ns

IXGP12N120A2

Littelfuse

N-CHANNEL

SINGLE

NO

24 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

1750 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

45 ns

IXGA12N120A2

Littelfuse

N-CHANNEL

SINGLE

YES

24 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

1750 ns

2

SMALL OUTLINE

150 Cel

SILICON

1200 V

-55 Cel

Matte Tin (Sn)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

10

260

45 ns

IXGH12N90C

Littelfuse

N-CHANNEL

SINGLE

NO

100 W

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

180 ns

350 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

900 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST

TO-247AD

e3

10

260

40 ns

IXGT24N170A

Littelfuse

N-CHANNEL

SINGLE

YES

250 W

24 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

80 ns

275 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-268AA

e3

10

260

98 ns

IXGH24N170A

Littelfuse

N-CHANNEL

SINGLE

NO

250 W

24 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

80 ns

275 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e3

10

260

98 ns

IXGT24N170AH1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

24 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

80 ns

456 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-268AA

e3

10

260

54 ns

IXGH24N170AH1

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

24 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

80 ns

456 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOW CONDUCTION LOSS

TO-247

e3

54 ns

SGP15N60RUF

Samsung

N-CHANNEL

SINGLE

NO

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

130 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

Not Qualified

HIGH SPEED SWITCHING

TO-220

90 ns

SGL15N60RUFD

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

130 ns

3

FLANGE MOUNT

150 Cel

SILICON

600 V

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH SPEED SWITCHING

TO-264

90 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.