Infineon Technologies - IRG7IC30FDPBF

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IRG7IC30FDPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRG7IC30FDPBF
Description N-Channel; Maximum Collector Current (IC): 24 A; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Threshold Voltage: 7 V;
Datasheet IRG7IC30FDPBF Datasheet
In Stock869
NAME DESCRIPTION
Nominal Turn Off Time (toff): 1813 ns
Maximum Collector Current (IC): 24 A
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 69 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 7 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Polarity or Channel Type: N-Channel
Minimum Operating Temperature: -55 Cel
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