400 A Insulated Gate Bipolar Transistors (IGBT) 112

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

MBM400CS6AW

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

400 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

MBM400GS6A

Renesas Electronics

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

400 A

POWER CONTROL

2

SILICON

600 V

ISOLATED

Not Qualified

HIGH SPEED, ULTRA SOFT FAST RECOVERY

350 ns

MBN400GR12A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

700 ns

4

FLANGE MOUNT

SILICON

1200 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

350 ns

RJP65S08DWT-80#X0

Renesas Electronics

N-CHANNEL

400 A

Insulated Gate BIP Transistors

150 Cel

650 V

30 V

NOT SPECIFIED

NOT SPECIFIED

RJP1CS08DWA-80#W0

Renesas Electronics

N-CHANNEL

400 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBN400GS12BW

Renesas Electronics

2000 W

400 A

3.4 V

1

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

RJP1CS08DWT-80#X0

Renesas Electronics

N-CHANNEL

400 A

Insulated Gate BIP Transistors

150 Cel

1250 V

30 V

NOT SPECIFIED

NOT SPECIFIED

MBN400C20

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3000 W

400 A

UNSPECIFIED

POWER CONTROL

5.2 V

UNSPECIFIED

RECTANGULAR

1

4000 ns

4

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

2000 V

20 V

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

HIGH RELIABILITY, LOW NOISE

1700 ns

MBN400GR12

Renesas Electronics

NO

2000 W

400 A

PLASTIC/EPOXY

2.8 V

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

UPPER

R-PUFM-X4

Not Qualified

MBN400A6

Renesas Electronics

400 A

2.5 V

1

Insulated Gate BIP Transistors

600 V

20 V

MG17300D-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

2

1200 ns

7

FLANGE MOUNT

125 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

480 ns

UL RECOGNIZED

MITA300RF1700PTED

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

1390 W

400 A

UNSPECIFIED

POWER CONTROL

2.45 V

UNSPECIFIED

RECTANGULAR

1

1200 ns

20

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-XUFM-X20

ISOLATED

430 ns

IEC-60747; UL RECOGNIZED

IXGN400N30A3

Littelfuse

N-CHANNEL

SINGLE

NO

735 W

400 A

PLASTIC/EPOXY

POWER CONTROL

1.15 V

UNSPECIFIED

RECTANGULAR

1

555 ns

4

FLANGE MOUNT

150 Cel

SILICON

300 V

-55 Cel

20 V

5 V

NICKEL

UPPER

R-PUFM-X4

ISOLATED

LOW CONDUCTION LOSS

100 ns

UL RECOGNIZED

IXGX400N30A3

Littelfuse

N-CHANNEL

SINGLE

NO

1000 W

400 A

PLASTIC/EPOXY

POWER CONTROL

1.15 V

THROUGH-HOLE

RECTANGULAR

1

555 ns

3

IN-LINE

150 Cel

SILICON

300 V

-55 Cel

20 V

5 V

TIN SILVER COPPER

SINGLE

R-PSIP-T3

COLLECTOR

100 ns

MG06300D-BN4MM

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

400 A

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

2

590 ns

7

FLANGE MOUNT

150 Cel

SILICON

600 V

-40 Cel

20 V

6.5 V

UPPER

R-XUFM-X7

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

180 ns

UL RECOGNIZED

MMIX1G320N60B3

Littelfuse

N-CHANNEL

SINGLE

YES

1000 W

400 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

595 ns

21

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5 V

DUAL

R-PDSO-G21

ISOLATED

Not Qualified

LOW CONDUCTION LOSS

NOT SPECIFIED

NOT SPECIFIED

107 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.